Online exposure dose correction during electron beam pattern delineation by blanking width modulation
TL;DR: In this article, the exposure current is monitored in-situ and the required correction to the exposure time is provided automatically in order to maintain uniform exposure globally, which leads to the loss of global linewidth control.
About: This article is published in Microelectronic Engineering.The article was published on 1990-04-01. It has received 3 citations till now. The article focuses on the topics: Laser beam quality & Laser linewidth.
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TL;DR: In this article, the formation of unsupported resist microfragments called resist debris (RD) over the exposed pattern areas in EBL is found to predict proximity exposure (PE) effects.
Abstract: Deliberate formation of unsupported resist microfragments called resist debris (RD) over the exposed pattern areas in electron beam lithography (EBL) is found to predict proximity exposure (PE) effects. Some simulation results and corresponding experimental results on RD formation discussed in the article show that both intra- and interpattern PE effects can be observed and explained from the nature of RD distribution. This gives a different kind of tool to tackle the problem of PE effect in EBL.
1 citations
TL;DR: In this paper, the phenomenon of resist debris (RD) formation in electron beam lithography (EBL) under various conditions of proximity exposure (PE) effect is discussed and the PE correction at the preferred resist plane together with adequate beam to beam spacing can provide stable and uniformly distributed RD over the exposed pattern area.
1 citations
TL;DR: The phenomenon of resist debris (RD) formation is shown to be a useful method for proximity exposure (PE) effect analysis in electron beam lithography as discussed by the authors, and some unique features associated with the method have direct relevance with the electron beam exposure parameters assumed in the simulation work.
Abstract: The phenomenon of resist debris (RD) formation is shown to be a useful method for proximity exposure (PE) effect analysis in electron beam lithography. Some simulation results and corresponding experimental results discussed in this article on RD formation over the electron beam exposed pattern areas before and after PE effect correction reveal certain unique features associated with the method. These unique features of the method have direct relevance with the electron beam exposure parameters assumed in the simulation work, their implementation during the experiments, pattern shape-spacing fidelity, and also the correction scheme used for the PE effect correction.
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TL;DR: In this paper, an electron beam exposure system, EX•7, was developed for advanced device technology development of quartermicron VLSI ICs such as a 64M bit dynamic RAM.
Abstract: An electron beam exposure system, EX‐7, has been developed for advanced device technology development of quartermicron VLSI ICs such as a 64M bit dynamic RAM. The EX‐7 utilizes the variable shaped beam, continuously moving stage and vector scanning concept.1,2 For the quartermicron PMMA (polymethyl‐methacrylate) resist pattern formation, the system can write patterns with a 50 kV acceleration voltage and a 50 μC/cm2 dosage. Double electrostatic octopole deflectors have been developed to assure beam positioning accuracy. Deflection distortion can be reduced to 0.01 μm by an automatic calibration method. The beam edge resolution is 0.125 μm at 1 μm‐square beam size and 200 A/cm2 current density. A newly developed hierarchical pattern definition method has greatly improved data compaction capability and reduced the conversion time from CAD LSI data to EX‐7 data. The data conversion is accomplished by a large scale computer within 15 min for 108 flash/chip VLSI IC pattern data. The throughput of the EX‐7 is 5...
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3 citations