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Journal ArticleDOI

Optical characterization of polycrystalline ZnSe1−xTex thin films using variable angle spectroscopic ellipsometry and spectrophotmetery techniques

TL;DR: In this article, the optical properties of polycrystalline ZnSe1−xTex (0.0≤x≤1.0) thin films were compared using variable angle spectroscopic ellipsometry (VASE) and spectrophotometry.
About: This article is published in Materials Science in Semiconductor Processing.The article was published on 2015-11-01. It has received 19 citations till now. The article focuses on the topics: Band gap & Refractive index.
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Journal ArticleDOI
TL;DR: The aim of this study was to produce nanocomposite polymer fibres, consisting of a matrix of polyacrylonitrile (PAN) and a reinforcing phase in the form of SiO/TiO2/Bi2O3 nanoparticles, by electrospinning the solution.
Abstract: The aim of this study was to produce nanocomposite polymer fibres, consisting of a matrix of polyacrylonitrile (PAN) and a reinforcing phase in the form of SiO2/TiO2/Bi2O3 nanoparticles, by electrospinning the solution. The effect of the nanoparticles and the electrospinning process parameters on the morphology and physical properties of the obtained composite nanofibres was then examined. The morphology of the fibres and the dispersion of nanoparticles in their volume were examined using scanning electron microscopy (SEM). All of the physical properties, which included the band gap width, dielectric constant and refractive index, were tested and plotted against the concentration by weight of the used reinforcing phase, which was as follows: 0%, 4%, 8% and 12% for each type of nanoparticles. The width of the band gap was determined on the basis of the absorption spectra of radiation (UV-vis) and ellipsometry methods. Spectroscopic ellipsometry has been used in order to determine the dielectric constant, refractive index and the thickness of the obtained fibrous mats.

28 citations

Journal ArticleDOI
TL;DR: In this article, the structural, surface morphology and optical properties of multi-thickness nanocrystalline NiO/glass substrate and IC thin films were investigated using spectroscopic ellipsometry (SE) technique.

26 citations

Journal ArticleDOI
TL;DR: In this paper, the optical properties of ZnS/ITO/glass films with various thicknesses were examined structurally and optically using spectroscopic ellipsometric and spectrophotometric techniques.

19 citations

Journal ArticleDOI
TL;DR: In this article, the structural, optical spectroscopic ellipsometry and morphological properties of nanocrystalline Hg1-xMnxO (0.1, 0.2) oxide diluted magnetic semiconductor thin films synthesized by electron beam deposition technique have been investigated by means of X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques.

19 citations

Journal ArticleDOI
TL;DR: In this article, a series of Zn1-xCuxO nanocrystalline films were deposited on a silica substrate using e-beam evaporation technology, and the physical properties of the deposited film were closely examined using x-ray diffraction, energy dispersive X-ray spectroscopy (EDXS), atomic force microscopy (AFM), and spectroscopic ellipsometry (SE).

17 citations

References
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Book
01 Jan 1962

24,003 citations

Book
01 Jan 1971
TL;DR: Optical processes in semiconductors as mentioned in this paper, Optical Process in Semiconductors (OPP), Optical Process of Semiconductor (OPS) and Optical Process (OPI)
Abstract: Optical processes in semiconductors , Optical processes in semiconductors , مرکز فناوری اطلاعات و اطلاع رسانی کشاورزی

4,630 citations

Journal ArticleDOI
TL;DR: In this article, the experimental evidence concerning the density of states in amorphous semiconductors and the ranges of energy in which states are localized is reviewed; this includes d.c and a.c. conductivity, drift mobility and optical absorption.
Abstract: The experimental evidence concerning the density of states in amorphous semiconductors and the ranges of energy in which states are localized is reviewed; this includes d.c. and a.c. conductivity, drift mobility and optical absorption. There is evidence that for some chalcogenide semiconductors the model proposed by Cohen, Fritzsche and Ovshinsky (1969) should be modified by introducing a band of localized states, near the centre of the gap. The values of C, when the d.c. conductivity is expressed as C exp (- E/kT), are considered. The behaviour of the optical absorption coefficient near the absorption edge and its relation to exciton formation are discussed. Finally, an interpretation of some results on photoconductivity is offered.

3,465 citations

Book
01 Jan 2007
TL;DR: In this paper, the authors present an overview of the application of Spectroscopic Ellipsometry in real-time monitoring of thin-film growth and its application in real time monitoring of anisotropic materials.
Abstract: Foreword. Preface. Acknowledgments. 1 Introduction to Spectroscopic Ellipsometry. 1.1 Features of Spectroscopic Ellipsometry. 1.2 Applications of Spectroscopic Ellipsometry. 1.3 Data Analysis. 1.4 History of Development. 1.5 Future Prospects. References. 2 Principles of Optics. 2.1 Propagation of Light. 2.2 Dielectrics. 2.3 Reflection and Transmission of Light. 2.4 Optical Interference. References. 3 Polarization of Light. 3.1 Representation of Polarized Light. 3.2 Optical Elements. 3.3 Jones Matrix. 3.4 Stokes Parameters. References. 4 Principles of Spectroscopic Ellipsometry. 4.1 Principles of Ellipsometry Measurement. 4.2 Ellipsometry Measurement. 4.3 Instrumentation for Ellipsometry. 4.4 Precision and Error of Measurement. References. 5 Data Analysis. 5.1 Interpretation of (PSI, DELTA). 5.2 Dielectric Function Models. 5.3 Effective Medium Approximation. 5.4 Optical Models. 5.5 Data Analysis Procedure. References. 6 Ellipsometry of Anisotropic Materials. 6.1 Reflection and Transmission of Light by Anisotropic Materials. 6.2 Fresnel Equations for Anisotropic Materials. 6.3 4x4 Matrix Method. 6.4 Interpretation of (PSI, DELTA) for Anisotropic Materials. 6.5 Measurement and Data Analysis of Anisotropic Materials. References. 7 Data Analysis Examples. 7.1 Insulators. 7.2 Semiconductors. 7.3 Metals/Semiconductors. 7.4 Organic Materials/Biomaterials. 7.5 Anisotropic Materials. References. 8 Real-Time Monitoring by Spectroscopic Ellipsometry. 8.1 Data Analysis in Real-Time Monitoring. 8.2 Observation of Thin-Film Growth by Real-Time Monitoring. 8.3 Process Control by Real-Time Monitoring. References. Appendices. 1 Trigonometric Functions. 2 Definitions of Optical Constants. 3 Maxwell's Equations for Conductors. 4 Jones-Mueller Matrix Conversion. 5 Kramers-Kronig Relations. Index.

1,743 citations