Journal ArticleDOI
Optical control of microwave semiconductor devices
Alwyn J. Seeds,A.A.A. de Salles +1 more
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TLDR
The use of optically controlled devices to perform a range of circuit functions is reviewed in this article, where the optical control of amplifier performance is discussed and future directions for research in this area are discussed.Abstract:
The use of optically controlled devices to perform a range of circuit functions is reviewed. The optical control of amplifier performance is discussed. The optical control of two- and three-terminal oscillators and optically pumped mixers is discussed. Among the active devices treated are Gunn and IMPATT oscillators; MESFET and HEMT amplifiers, oscillators, and mixtures; and diode mixers. Future directions for research in this area are discussed. >read more
Citations
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Journal ArticleDOI
Microwave photonics combines two worlds
José Capmany,Dalma Novak +1 more
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Proceedings Article
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Organic light detectors: photodiodes and phototransistors.
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Microwave Photonics
Alwyn J. Seeds,K.J. Williams +1 more
TL;DR: The development status of microwave photonic devices is reviewed, their systems applications are described, and some likely areas for future development are suggested.
Journal ArticleDOI
Organic photoresponse materials and devices
TL;DR: It is expected that this systematic analysis of photoresponse materials and devices could be a guide for the better understanding of structure-property relationships of organic materials and provide key clues for the fabrication of high performance organic optoelectronic devices.
References
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Journal ArticleDOI
A study of locking phenomena in oscillators
TL;DR: In this article, a differential equation is derived which gives the oscillator phase as a function of time, and with the aid of this equation, the transient process of "pull-in" as well as the production of distorted beat note are described in detail.
Journal ArticleDOI
Injection locking of microwave solid-state oscillators
TL;DR: Injection locking of microwave solid-state oscillators is discussed in this article, based on the familiar theorem that the total impedance times the current is equal to the applied voltage, based on which the locking range, large-signal injection, locking stability, and AM and FM noise are analyzed.
Journal ArticleDOI
Optical Control of GaAs MESFET's
TL;DR: In this article, a simple model to estimate the effects of light on the dc and RF properties of MESFET'S is presented, where photoconductive and photovoltaic effects in the active channel and substrate are considered to predict the change in the dc equivalent circuit parameters of the FET.
Journal ArticleDOI
Microwave Performance of an Optically Controlled AIGaAs/GaAs High Electron Mobility Transistor and GaAs MESFET
TL;DR: In this article, the light-induced voltage, the increase in the drain current, the RF gain, and the change in the microwave scattering parameters of an AIGaAs/GaAs high electron mobility transistor (HEMT) under optical illumination of photon energy equal to or greater than the semiconductor band gap are computed.
Journal ArticleDOI
Microwave Characteristics of an Optically Controlled GaAs MESFET
TL;DR: In this article, the results of an experimental investigation of microwave characteristics of a GaAs MESFET under optically direct-controlled conditions were presented, and it was found that they can be controlled by varying the incident light intensity in the same manner as when varying the gate bias voltage.