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Optical Processes in Semiconductors
01 Jan 1971-
TL;DR: Optical processes in semiconductors as mentioned in this paper, Optical Process in Semiconductors (OPP), Optical Process of Semiconductor (OPS) and Optical Process (OPI)
Abstract: Optical processes in semiconductors , Optical processes in semiconductors , مرکز فناوری اطلاعات و اطلاع رسانی کشاورزی
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TL;DR: A large amount of work world wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si as mentioned in this paper, and the key importance of crystalline Si nanostructures in determining the behaviour of porous si is highlighted.
Abstract: A large amount of work world-wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si. Much progress has been made following the demonstration in 1990 that highly porous material could emit very efficient visible photoluminescence at room temperature. Since that time, all features of the structural, optical and electronic properties of the material have been subjected to in-depth scrutiny. It is the purpose of the present review to survey the work which has been carried out and to detail the level of understanding which has been attained. The key importance of crystalline Si nanostructures in determining the behaviour of porous Si is highlighted. The fabrication of solid-state electroluminescent devices is a prominent goal of many studies and the impressive progress in this area is described.
2,371 citations
TL;DR: In this paper, the authors reported the observation of optically pumped lasing in ZnO at room temperature using a plasma-enhanced molecular beam epitaxy on sapphire substrates.
Abstract: We report the observation of optically pumped lasing in ZnO at room temperature. Thin films of ZnO were grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates. Laser cavities formed by cleaving were found to lase at a threshold excitation intensity of 240 kW cm−2. We believe these results demonstrate the high quality of ZnO epilayers grown by molecular beam epitaxy while clearly demonstrating the viability of ZnO based light emitting devices.
2,126 citations
TL;DR: In this paper, single-crystal islands and polycrystals containing tilt and mirror twin grain boundaries are characterized, and the influence of the grain boundaries on the material properties of molybdenum disulphide is assessed.
Abstract: Despite recent progress in the synthesis and characterization of molybdenum disulphide, little is yet known about its microstructure. Using refined chemical vapour deposition synthesis, high-quality crystals of monolayer molybdenum disulphide have now been grown. Single-crystal islands and polycrystals containing tilt and mirror twin grain boundaries are characterized, and the influence of the grain boundaries on the material properties of molybdenum disulphide is assessed.
1,911 citations
TL;DR: In this article, the authors compared carbon nanotube, metal nanowire networks, and regular metal grids with the usual transparent conductive oxides for optically transparent electrode applications.
Abstract: Increasing demand for raw materials means that alternatives to indium-tin oxide are desired for optically transparent electrode applications. Carbon nanotube, metal nanowire networks and regular metal grids have been investigated as possible options. In this review, these materials and recently rediscovered graphene are compared with the usual transparent conductive oxides.
1,697 citations
TL;DR: In this article, the microstructure of monolayer molybdenum disulfide has been studied and the authors show that triangular islands are single crystals and merge to form faceted tilt and mirror boundaries that are stitched together by lines of 8- and 4- membered rings.
Abstract: Recent progress in large-area synthesis of monolayer molybdenum disulfide, a new two-dimensional direct-bandgap semiconductor, is paving the way for applications in atomically thin electronics. Little is known, however, about the microstructure of this material. Here we have refined chemical vapor deposition synthesis to grow highly crystalline islands of monolayer molybdenum disulfide up to 120 um in size with optical and electrical properties comparable or superior to exfoliated samples. Using transmission electron microscopy, we correlate lattice orientation, edge morphology, and crystallinity with island shape to demonstrate that triangular islands are single crystals. The crystals merge to form faceted tilt and mirror boundaries that are stitched together by lines of 8- and 4- membered rings. Density functional theory reveals localized mid-gap states arising from these 8-4 defects. We find that mirror boundaries cause strong photoluminescence quenching while tilt boundaries cause strong enhancement. In contrast, the boundaries only slightly increase the measured in-plane electrical conductivity.
1,430 citations