Journal ArticleDOI
Optical properties of thermally vacuum evaporated thin films
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In this paper, the optical constants (the refractive index n and the absorption index k) of the films were determined for several samples of different thickness (180 nm-270 nm), using spectrophotometric measurements of the transmittance T and reflectance R at normal incidence in the spectral range 500-2500 nm.Abstract:
Silver antimony diselenide thin films were prepared by a thermal vacuum evaporation technique onto quartz and glass substrates kept at room temperature . The as-deposited films were amorphous and transformed to a face centred cubic (FCC) polycrystalline nature with the lattice constant on post-deposition annealing above 423 K for one hour in argon atmosphere. The optical constants (the refractive index n, and the absorption index k) of the films were determined for several samples of different thickness (180 nm-270 nm), using spectrophotometric measurements of the transmittance T and reflectance R at normal incidence in the spectral range 500-2500 nm. These constants were also determined for preannealed films, (polycrystalline). The obtained values of both n and k were independent of the film thickness within the above-mentioned thickness range. The refractive index data fitted a single-oscillator model with high-frequency dielectric constants increasing from 13 for the amorphous films to 15 for the crystalline films. It was found that the high-frequency dielectric constant has the same values as the lattice dielectric constant . The analysis of the spectral behaviour of the absorption coefficient in the intrinsic absorption region revealed the existence of an indirect allowed optical transition with energy gap 1.2 eV for amorphous films and 1.03 eV for the crystalline films, respectively.read more
Citations
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Optical Properties of Nano 5,10,15,20-Tetraphenyl-21H,23H-Prophyrin Nickel (II) Thin Films
TL;DR: In this article, the optical properties of the as-deposited and annealed films of 5, 10, 15, 20, 20-Tetraphenyl-21H, 21H, 23H-Porphyrin nickel (II), (NiTPP) were investigated using spectrophotometric measurements of both transmittance and reflectance at normal incidence of light in the wavelength range, 200-1100nm.
Journal ArticleDOI
Crystal structure, electronic and transport properties of AgSbSe2 and AgSbTe2
TL;DR: In this paper, the structural properties of AgSbX2 (X=Se and Te) materials were investigated by X-ray diffraction and SEM microscopy, and the electrical conductivity, thermal conductivity and Seebeck coefficient have been measured as a function of temperature in the range from 300 to 600 k.
Journal ArticleDOI
Structural and optical properties of thermally evaporated 2-(2,3-dihydro-1,5-dimethyl-3-oxo-2-phenyl-1H-pyrazol-4-ylimino)-2-(4-nitrophenyl)acetonitrile thin films
TL;DR: The structural and optical properties of as-deposited and γ-rays irradiated 2-(2,3-dihydro-1,5dimethyl-3-oxo-2-phenyl-1H-pyrazol-4-ylimino)-2-(4-nitrophenyl)acetonitrile (DOPNA) thin films have been reported in this article.
Journal ArticleDOI
Semiconducting AgSbSe2 thin film and its application in a photovoltaic structure
TL;DR: In this paper, a two-stage process consisting of the formation of an Ag2Se film through the reaction of a vacuum deposited Ag film in the Se vapour at about 80 °C, and its reaction at 300 °C with a chemically deposited Sb2S3 film, results in the creation of the AgSbSe2 film.
Journal ArticleDOI
Effect of substrate temperature on the structural, morphological, and optical properties of Sb2S3 thin films
TL;DR: Sb2S3 thin films have been deposited by single source vacuum thermal evaporation onto glass substrates as mentioned in this paper, and X-ray diffraction (XRD) showed that films deposited at substrate TS
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TL;DR: In this article, a microscopic tensor theory of the electro-optical and nonlinear optical effects in oxygen-octahedra ferroelectrics is presented, which stresses the importance of the basic BO6 octahedron building block in this class of materials.
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GaSe detectors for x‐ray beams
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A proposed collector design of double heterojunction bipolar transistors for power applications
Wei Liu,Dee-Son Pan +1 more
TL;DR: In this paper, a collector design for the AlGaAs-GaAs double heterostructure bipolar transistor (DHBT) is proposed, analyzed, and simulated, and simple analytical formulas are derived to facilitate the implementation of the design.