Proceedings ArticleDOI
Optimization of cross-sectional aspect ratio of ballistic Si nanobar MOSFETs for superior current-voltage characteristics
Basudev Nag Chowdhury,Puja Singh,Sanatan Chattopadhyay +2 more
- Vol. 8549, pp 409-414
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TLDR
In this paper, the carrier transport in ballistic Si-NBFETs is modeled by constructing a relevant Hamitonian matrix, where the coupling of source and drain with the channel is incorporated by the corresponding self-energy matrices.Abstract:
Si nanobar field effect transistors (Si-NBFETs) have emerged as one of the potential candidates in the present era of
nano-structured electronic devices. In the current work, the carrier transport in ballistic Si-NBFETs is modeled by
constructing a relevant Hamitonian matrix, where the coupling of source and drain with the channel is incorporated by
the corresponding self-energy matrices. The Hamiltonian is solved by non-equilibrium Green’s function formalism. The
current-voltage characteristics for different width and thickness of the nanobar channel are investigated in detail.
Comparative study on drive current and leakage current for various transverse dimensions suggests a cross-sectional
design window with an aspect ratio in the range of 1.3-1.6 to be appropriate for superior performance.read more
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High Performance Silicon Nanowire Field Effect Transistors
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FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
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TL;DR: In this paper, a self-aligned double-gate MOSFET, FinFET was proposed by using boron-doped Si/sub 04/Ge/sub 06/ as a gate material.
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Nanoscale device modeling: the Green’s function method
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Realization of a silicon nanowire vertical surround-gate field-effect transistor.
TL;DR: A generic process for fabricating a vertical surround-gate field-effect transistor (VS-FET) based on epitaxially grown nanowires is described, and a first electrical characterization proving the feasibility of the process developed and the basic functionality of this device is presented.
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A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation
TL;DR: In this article, a 3D quantum simulator for the silicon nanowire transistor (SNWT) is presented, where the authors use Buttiker probes to simulate the effects of scattering on both internal device characteristics and terminal currents.