Optimization of NCFET by Matching Dielectric and Ferroelectric Nonuniformly Along the Channel
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Cites background from "Optimization of NCFET by Matching D..."
...INTRODUCTION TO CONQUER the Boltzmann tyranny of subthreshold swing (SS = 60 mV/dec) in conventional FET devices, the negative capacitance (NC)-FET is an emerging solution [1], [2]....
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9 citations
References
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"Optimization of NCFET by Matching D..." refers background in this paper
...Tunneling field-effect transistors (TFETs), nano-electromechanical (NEM) switches [4], and negative capacitance field-effect transistors (NCFETs) are promising ways to overcome the Boltzmann Tyranny [5]....
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...I. INTRODUCTION THE fundamental limit imposed by the Boltzmanndistribution (60 mV/decade) which hinders scaling of CMOS technology is referred to as the Boltzmann Tyranny [1]–[3]....
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740 citations
"Optimization of NCFET by Matching D..." refers background in this paper
...In HfO2-based NCFETs, the remanent polarization (Pr) is more sensitive to ferroelectric doping concentration than coercive field (Ec) [23]....
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587 citations
"Optimization of NCFET by Matching D..." refers background in this paper
...Many letters have discussed the nonuniformity in electric field, nonuniformity in FE [16]–[19], and methods of improving the degree of capacitance matching [20]–[21]....
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540 citations