Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz.
TL;DR: The basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices are described.
Abstract: This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, 'visible blind' and 'solar blind' detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.
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TL;DR: There is, I think, something ethereal about i —the square root of minus one, which seems an odd beast at that time—an intruder hovering on the edge of reality.
Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.
Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …
33,785 citations
TL;DR: The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed in this article.
Abstract: Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap. It is usually reported that there are five different polymorphs of Ga2O3, namely, the monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), or orthorhombic (e) structures. Of these, the β-polymorph is the stable form under normal conditions and has been the most widely studied and utilized. Since melt growth techniques can be used to grow bulk crystals of β-GaO3, the cost of producing larger area, uniform substrates is potentially lower compared to the vapor growth techniques used to manufacture bulk crystals of GaN and SiC. The performance of technologically important high voltage rectifiers and enhancement-mode Metal-Oxide Field Effect Transistors benefit from the larger critical electric field of β-Ga2O3 relative to either SiC or GaN. However, the absence of clear demonstrations of p-type doping in Ga2O3, which may be a fundamental issue resulting from the band structure, makes it very difficult to simultaneously achieve low turn-on voltages and ultra-high breakdown. The purpose of this review is to summarize recent advances in the growth, processing, and device performance of the most widely studied polymorph, β-Ga2O3. The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed. Areas where continued development is needed to fully exploit the properties of Ga2O3 are identified.
1,535 citations
TL;DR: In this paper, high crystalline quality InGaN/AlGaN multiple quantum structures on patterned sapphire with silica array (PSSA) have been successfully demonstrated.
135 citations
113 citations
References
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TL;DR: There is, I think, something ethereal about i —the square root of minus one, which seems an odd beast at that time—an intruder hovering on the edge of reality.
Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.
Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …
33,785 citations
"Optoelectronic device physics and t..." refers background in this paper
...At the same time, the development of nitride UV lasers is also being widely investigated [227-236], motivated by applications in bio-chemical sensing, material processing, water treatment, and non-line-of-sight optical communications....
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Book•
01 Jan 1939
14,299 citations
"Optoelectronic device physics and t..." refers background in this paper
...In their discussion these authors have adapted the Pauling ionicity scale [95], and have considered the difference in electronegativity (ΔX) of the two constituents of a binary compound as an approximate measure of the ionicity of the compound....
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Book•
01 Jan 1985
TL;DR: In this paper, the physical properties of crystals systematically in tensor notation are presented, presenting tensor properties in terms of their common mathematical basis and the thermodynamic relations between them.
Abstract: First published in 1957, this classic study has been reissued in a paperback version that includes an additional chapter bringing the material up to date. The author formulates the physical properties of crystals systematically in tensor notation, presenting tensor properties in terms of their common mathematical basis and the thermodynamic relations between them. The mathematical groundwork is laid in a discussion of tensors of the first and second ranks. Tensors of higher ranks and matrix methods are then introduced as natural developments of the theory. A similar pattern is followed in discussing thermodynamic and optical aspects.
8,520 citations
Book•
03 Jul 1995
TL;DR: In this paper, the authors developed the theoretical tools of photonics using principles of linear algebra and symmetry, emphasizing analogies with traditional solid-state physics and quantum theory, and investigated the unique phenomena that take place within photonic crystals at defect sites and surfaces, from one to three dimensions.
Abstract: Since it was first published in 1995, Photonic Crystals has remained the definitive text for both undergraduates and researchers on photonic band-gap materials and their use in controlling the propagation of light. This newly expanded and revised edition covers the latest developments in the field, providing the most up-to-date, concise, and comprehensive book available on these novel materials and their applications. Starting from Maxwell's equations and Fourier analysis, the authors develop the theoretical tools of photonics using principles of linear algebra and symmetry, emphasizing analogies with traditional solid-state physics and quantum theory. They then investigate the unique phenomena that take place within photonic crystals at defect sites and surfaces, from one to three dimensions. This new edition includes entirely new chapters describing important hybrid structures that use band gaps or periodicity only in some directions: periodic waveguides, photonic-crystal slabs, and photonic-crystal fibers. The authors demonstrate how the capabilities of photonic crystals to localize light can be put to work in devices such as filters and splitters. A new appendix provides an overview of computational methods for electromagnetism. Existing chapters have been considerably updated and expanded to include many new three-dimensional photonic crystals, an extensive tutorial on device design using temporal coupled-mode theory, discussions of diffraction and refraction at crystal interfaces, and more. Richly illustrated and accessibly written, Photonic Crystals is an indispensable resource for students and researchers.Extensively revised and expanded Features improved graphics throughout Includes new chapters on photonic-crystal fibers and combined index-and band-gap-guiding Provides an introduction to coupled-mode theory as a powerful tool for device design Covers many new topics, including omnidirectional reflection, anomalous refraction and diffraction, computational photonics, and much more.
8,188 citations
"Optoelectronic device physics and t..." refers background in this paper
...One approach to improve the light extraction efficiency is to incorporate a photonic crystal lattice (PCL) on the top of the surfaces [179]....
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...TiO2 and air, is proportional to the strength of the scattering [179]....
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