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Journal ArticleDOI

Optoelectronic dynamic memristor systems based on two-dimensional crystals

01 Jan 2021-Chaos Solitons & Fractals (Pergamon)-Vol. 142, pp 110523
TL;DR: In this paper, an optoelectronic dynamic memristive structure with quantum dots (QDs), controlled by ultrafast photoinduced structural phase transitions, is proposed for creating information systems with stochastic data processing.
Abstract: Optical modulation of resistive switching in an optoelectronic memristor allows it to be optically controlled at ultra-high speed and ultra-low power consumption. Optical memristive systems with memory elements switched by electromagnetic radiation can be used in optically reconfigurable and tunable neural networks for neuromorphic computing and brain-inspired artificial intelligence systems. Two-dimensional (2D) crystals with unique electrical and optical properties demonstrate tremendous potential in the creation of highly efficient information and sensor systems for real-time data monitoring and processing. In this paper, we consider optoelectronic structures based on graphene, graphene oxide, and molybdenum disulfide for dynamic memristive signal processing. 2D optoelectronic memristor structures exhibit multiple states, which can be monitored in a wide range of optical excitations and used as sensors for pattern recognition and image processing. An optoelectronic dynamic memristive structure with quantum dots (QDs), controlled by ultrafast photoinduced structural phase transitions, is promising for creating information systems with stochastic data processing. The phase transition, controlled by charge and temperature, results in tunable periodic oscillations due to two state variables that exhibit chaotic behavior similar to that which occurs in a biological neuron network.
Citations
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Journal ArticleDOI
TL;DR: This work proposes a purely photonic operation of an Integrate-and-Fire Spiking neuron, based on the phase change dynamics of Ge2Sb2Te5 (GST) embedded on top of a microring resonator, which alleviates the energy constraints of PCMs in electrical domain.
Abstract: The rapid growth of brain-inspired computing coupled with the inefficiencies in the CMOS implementations of neuromrphic systems has led to intense exploration of efficient hardware implementations of the functional units of the brain, namely, neurons and synapses. However, efforts have largely been invested in implementations in the electrical domain with potential limitations of switching speed, packing density of large integrated systems and interconnect losses. As an alternative, neuromorphic engineering in the photonic domain has recently gained attention. In this work, we demonstrate a purely photonic operation of an Integrate-and-Fire Spiking neuron, based on the phase change dynamics of Ge$_2$Sb$_2$Te$_5$ (GST) embedded on top of a microring resonator, which alleviates the energy constraints of PCMs in electrical domain. We also show that such a neuron can be potentially integrated with on-chip synapses into an all-Photonic Spiking Neural network inferencing framework which promises to be ultrafast and can potentially offer a large operating bandwidth.

51 citations

Journal ArticleDOI
TL;DR: In this article , a memristor with Au/polyimide (PI)/Au structure is prepared by magnetron sputtering to investigate the multiphotoconductance resistive switching (RS) memory behavior.
Abstract: A memristor with Au/polyimide (PI)/Au structure is prepared by magnetron sputtering to investigate the multiphotoconductance resistive switching (RS) memory behavior. The PI-based memristor presents stable bipolar RS memory and is sensitive to visible light. Four discrete conductance states in both high-resistance state (HRS) and low-resistance state (LRS) are obtained when illuminating by 365, 550, 590, and 780 nm light. Electron trapping and detrapping from the defects distributed at interfaces and the PI switching layer are responsible for the observed RS memory behavior. The enhanced trapping and detrapping process by light illumination is responsible for the multiconductance states. This work provides the possibility for further development of neuromorphic vision sensors using an organic semiconductor-based memristor.

8 citations

Journal ArticleDOI
TL;DR: A review of 2D materials and their heterostructures to be used for neuromorphic computing devices, which could be classified by the working mechanism and device geometry is presented in this article .
Abstract: Neuromorphic computing systems employing artificial synapses and neurons are expected to overcome the limitations of the present von Neumann computing architecture in terms of efficiency and bandwidth limits. Traditional neuromorphic devices have used 3D bulk materials, and thus, the resulting device size is difficult to be further scaled down for high density integration, which is required for highly integrated parallel computing. The emergence of two-dimensional (2D) materials offers a promising solution, as evidenced by the surge of reported 2D materials functioning as neuromorphic devices for next-generation computing. In this review, we summarize the 2D materials and their heterostructures to be used for neuromorphic computing devices, which could be classified by the working mechanism and device geometry. Then, we survey neuromorphic device arrays and their applications including artificial visual, tactile, and auditory functions. Finally, we discuss the current challenges of 2D materials to achieve practical neuromorphic devices, providing a perspective on the improved device performance, and integration level of the system. This will deepen our understanding of 2D materials and their heterojunctions and provide a guide to design highly performing memristors. At the same time, the challenges encountered in the industry are discussed, which provides a guide for the development direction of memristors.

6 citations

Posted Content
TL;DR: In this article, the optical properties of single and bilayer CVD graphene were investigated by using Raman scattering and spectroscopic ellipsometry, and it was revealed that the top sheet of bilayer graphene becomes perforated after the treatment by nitrogen plasma.
Abstract: Plasma functionalization of graphene is one of the facile ways to tune its doping level without the need for wet chemicals making graphene photoluminescent. Microscopic corrugations in the two-dimensional structure of bilayer CVD graphene having a quasi-free-suspended top layer, such as graphene ripples, nanodomes, and bubbles, may significantly enhance local reactivity leading to etching effects on exposure to plasma. Here, we discovered that bilayer CVD graphene treated with nitrogen plasma exhibits efficient UV-green-red emission, where the excitation at 250 nm leads to photoluminescence with the peaks at 390, 470, and 620 nm, respectively. By using Raman scattering and spectroscopic ellipsometry, we investigated doping effects induced by oxygen or nitrogen plasma on the optical properties of single- and bilayer CVD graphene. The surface morphology of the samples was studied by atomic force microscopy. It is revealed that the top sheet of bilayer graphene becomes perforated after the treatment by nitrogen plasma. Our comprehensive study indicates that the dominant green emission is associated with the edge defect structure of perforated graphene filled with nitrogen. The discovered efficient emission appearing in nitrogen plasma treated perforated graphene may have a significant potential for the development of advanced optoelectronic materials.

4 citations

Journal ArticleDOI
TL;DR: In this article , the authors proposed a model of the electrical conductivity dynamics caused by impact of the ultrashort laser radiation, which is well related to experimental data, and showed that a double pulses impact is optimal for the controllability of the crystallization process.
Abstract: • Crystallization of amorphous Ge 2 Sb 2 Te 5 films by femtosecond pulsed laser radiation was studied by in-situ electrical resistance measurements. • Description of crystallization mechanism for GST and its affecting on electrophysical properties. • The two-pulse method for the GST resistance switching demonstrates high controllability and efficiency for crystallization by ultrashort laser pulses. Crystallization of as-deposited amorphous Ge 2 Sb 2 Te 5 films (180 nm) by femtosecond pulsed laser radiation have been studied using in-situ electrical resistance measurements with temporal resolution. The results show that a double pulses impact is optimal for the controllability of the crystallization process. In this case, the switching time of the film resistance is less than 100 ns and is associated with the formation of conducting crystalline paths in the material after the pulse laser impact. We have proposed a model of the electrical conductivity dynamics caused by impact of the ultrashort laser radiation, which is well related to experimental data.

2 citations

References
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Journal ArticleDOI
22 Oct 2004-Science
TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Abstract: We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 10 13 per square centimeter and with room-temperature mobilities of ∼10,000 square centimeters per volt-second can be induced by applying gate voltage.

55,532 citations

Journal ArticleDOI
TL;DR: In this paper, the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations, are discussed.
Abstract: This article reviews the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. The Dirac electrons behave in unusual ways in tunneling, confinement, and the integer quantum Hall effect. The electronic properties of graphene stacks are discussed and vary with stacking order and number of layers. Edge (surface) states in graphene depend on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. Different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.

20,824 citations

Journal ArticleDOI
01 May 2008-Nature
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Abstract: Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor (short for memory resistor). Although he showed that such an element has many interesting and valuable circuit properties, until now no one has presented either a useful physical model or an example of a memristor. Here we show, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage. These results serve as the foundation for understanding a wide range of hysteretic current-voltage behaviour observed in many nanoscale electronic devices that involve the motion of charged atomic or molecular species, in particular certain titanium dioxide cross-point switches.

8,971 citations

Journal ArticleDOI
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Abstract: A new two-terminal circuit element-called the memristorcharacterized by a relationship between the charge q(t)\equiv \int_{-\infty}^{t} i(\tau) d \tau and the flux-linkage \varphi(t)\equiv \int_{- \infty}^{t} v(\tau) d \tau is introduced as the fourth basic circuit element. An electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented. Many circuit-theoretic properties of memistors are derived. It is shown that this element exhibits some peculiar behavior different from that exhibited by resistors, inductors, or capacitors. These properties lead to a number of unique applications which cannot be realized with RLC networks alone. Although a physical memristor device without internal power supply has not yet been discovered, operational laboratory models have been built with the help of active circuits. Experimental results are presented to demonstrate the properties and potential applications of memristors.

7,585 citations

Journal ArticleDOI
TL;DR: Graphene has high mobility and optical transparency, in addition to flexibility, robustness and environmental stability as discussed by the authors, and its true potential lies in photonics and optoelectronics, where the combination of its unique optical and electronic properties can be fully exploited, even in the absence of a bandgap, and the linear dispersion of the Dirac electrons enables ultrawideband tunability.
Abstract: The richness of optical and electronic properties of graphene attracts enormous interest. Graphene has high mobility and optical transparency, in addition to flexibility, robustness and environmental stability. So far, the main focus has been on fundamental physics and electronic devices. However, we believe its true potential lies in photonics and optoelectronics, where the combination of its unique optical and electronic properties can be fully exploited, even in the absence of a bandgap, and the linear dispersion of the Dirac electrons enables ultrawideband tunability. The rise of graphene in photonics and optoelectronics is shown by several recent results, ranging from solar cells and light-emitting devices to touch screens, photodetectors and ultrafast lasers. Here we review the state-of-the-art in this emerging field.

6,863 citations