Journal Article•
Optoelectronic properties of metal oxide-gallium phosphide heterojunctions
01 Jan 1991-Soviet physics. Semiconductors (American Institute of Physics)-Vol. 25, Iss: 10, pp 1017-1020
About: This article is published in Soviet physics. Semiconductors.The article was published on 1991-01-01 and is currently open access. It has received 3 citations till now. The article focuses on the topics: Gallium phosphide & Heterojunction.
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05 Jul 2017
TL;DR: In this article, a short description of other undoped and doped oxide films such as ZnO and TiO2 fabricated by spray pyrolysis is presented, where the films serve as an active and antireflection electrode.
Abstract: Spray pyrolysis is a low-cost and simple technique for the fabrication of high-quality transparent and conducting oxide thin films for different optoelectronic applications. The fabrication method, structural, morphological, and electro-optical properties of fluorinedoped tin oxide (FTO) and tin-doped indium oxide (ITO) films have been investigated. The deposited films have low resistivity and high transparency. Applications of such films are shown in high-efficiency surface-barrier photodetectors and solar cells, where the films serve as an active and antireflection electrode. A short description of other undoped and doped oxide films such as ZnO and TiO2 fabricated by spray pyrolysis is presented.
10 citations
TL;DR: In this article, the growth and spectral characteristics of p-AlGaP, pGaP/n-GaP heterostructures photosensors grown by the LPE method were studied.
8 citations
12 Jul 2017
TL;DR: In this article, the authors present a short review in the field of design, fabrication technology, and testing of high-efficiency surface-barrier photodiodes with electrodes based on thin-film transparent conducting oxides (TCO) such as tin-doped indium oxide (ITO) and fluorine-decomposed tin oxide (FTO).
Abstract: The aim of this chapter is to present a short review in the field of design, fabrication technology, and testing of high-efficiency surface-barrier photodiodes with electrodes based on thin-film transparent conducting oxides (TCO) such as tin-doped indium oxide (ITO) and fluorine-doped tin oxide (FTO). Most of this review is based on our own results obtained and reported during the last 30 years. Besides a brief description of the low-cost spray pyrolysis deposition technique, mainly used in our work for deposition of the TCO films on a semiconductor surface, structural, morphological, and optoelectronic properties of these TCO films are discussed. As an example, a successful application of these TCO films is shown and used in high-efficiency surface-barrier photodiodes for a wide spectral range, from near ultraviolet (UV) to near infrared (NIR), and fabricated on different semiconductor substrates such as traditional Si, wide energy band ZnS, and GaP compound semiconductor substrates. The possible use of the Si surface-barrier structures as radiation-resistant detectors and gamma radiation detectors is discussed. The properties of high-efficiency surface-barrier photodiodes based on a perspective ternary semiconductor compound, Hg3In2Te6 mercury indium telluride (MIT), for detection of 1.3 μm and 1.55 μm radiation for applications in fiber optics, are also reported.
3 citations