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Journal ArticleDOI

Organic Heterostructure Field-Èffect Transistors

Ananth Dodabalapur, +3 more
- 15 Sep 1995 - 
- Vol. 269, Iss: 5230, pp 1560-1562
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TLDR
Organic field-effect transistors have been developed that function as either n-channel or p-channel devices, depending on the gate bias, and can be used as a building block to form low-cost, low-power complementary integrated circuits.
Abstract
Organic field-effect transistors have been developed that function as either n-channel or p-channel devices, depending on the gate bias. The two active materials are α-hexathienylene (α-6T) and C 60 . The characteristics of these devices depend mainly on the molecular orbital energy levels and transport properties of α-6T and C 60 . The observed effects are not unique to the two materials chosen and can be quite universal provided certain conditions are met. The device can be used as a building block to form low-cost, low-power complementary integrated circuits.

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Citations
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Journal ArticleDOI

A high-mobility electron-transporting polymer for printed transistors

TL;DR: A highly soluble and printable n-channel polymer exhibiting unprecedented OTFT characteristics under ambient conditions in combination with Au contacts and various polymeric dielectrics is reported and all-printed polymeric complementary inverters have been demonstrated.
Journal ArticleDOI

General observation of n-type field-effect behaviour in organic semiconductors

TL;DR: It is demonstrated that the use of an appropriate hydroxyl-free gate dielectric—such as a divinyltetramethylsiloxane-bis(benzocyclobutene) derivative (BCB; ref. 6)—can yield n-channel FET conduction in most conjugated polymers, revealing that electrons are considerably more mobile in these materials than previously thought.
Journal ArticleDOI

Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques.

TL;DR: This paper is a review of recent progress made in organic thin films grown in ultrahigh vacuum or using other vapor-phase deposition methods and describes the most important work which has been published in this field since the emergence of OMBD in the mid-1980s.
References
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Journal ArticleDOI

All-polymer field-effect transistor realized by printing techniques

TL;DR: A field-effect transistor has been fabricated from polymer materials by printing techniques, which shows high current output, and opens the way for large-area, low-cost plastic electronics.
Journal ArticleDOI

Organic transistors: two-dimensional transport and improved electrical characteristics.

TL;DR: The thiophene oligomer α-hexathienylene (α-6T) has been successfully used as the active semiconducting material in thin-film transistors and optimized methods of device fabrication have resulted in high field-effect mobilities and on/off current ratios of > 106.
Journal ArticleDOI

C60 thin film transistors

TL;DR: In this paper, N-channel field effect transistors with excellent device characteristics have been fabricated by utilizing C60 as the active element, showing on-off ratios as high as 106 and field effect mobilities up to 0.08 cm2/V
Journal ArticleDOI

C60 bonding and energy-level alignment on metal and semiconductor surfaces.

TL;DR: Results for C{sub 60} monolayers on {ital n}-type GaAs(110) show transfer of {le}0.02 electron per fullerene, as gauged by substrate band bending.
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