Organic Solid-State Laser for Silicon Nitride Photonic Integrated Circuits
29 Sep 2019-
TL;DR: In this paper, the authors report silicon nitride organic hybrid laser designs pumped with a laser diode, which is a key component for photonic integrated circuits and is highly cost-effective.
Abstract: Coherent light sources are a key component for photonic integrated circuits. Organic solid-state lasers can be monolithically integrated and are highly cost-effective. We report silicon nitride organic hybrid laser designs pumped with a laser diode.
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TL;DR: In this article, the effect of radiation losses on the mode selectivity of DFB laser with second-order gratings was studied, and it was shown that interference of the radiation due to first-order diffraction of oppositely propagating guided waves cancels the radiation loss at one of the edges of the spectrum gap.
Abstract: We present a theoretical study of the effect of radiation losses on the mode selectivity of DFB lasers with second-order gratings. For a second-order grating, interference of the radiation due to first-order diffraction of oppositely propagating guided waves cancels the radiation loss at one of the edges of the spectrum gap. This provides threshold gain discrimination of order 10 cm-1against one of the two dominant modes occurring near the edges of the gap. This should allow fabrication of DFB lasers with properties that are nearly independent of the positions of the facets relative to the grating corrugations, which are uncontrolled. By applying antireflection coatings to the two ends, differential quantum efficiencies close to those of conventional Fabry-Perot lasers should be achievable.
333 citations
TL;DR: In this paper, the use of gallium nitride-based light-emitting diodes (LEDs) as pump sources has been discussed with a particular emphasis on using gallium-nitride based lightemitting diode (LED) as a pump source.
Abstract: Optical pumping conditions for organic solid-state lasers (OSLs) are discussed with particular emphasis on the use of gallium nitride based light-emitting diodes (LEDs) as pump sources. LEDs operate in a regime where the pump should be optimized for a short rise time and high peak in- tensity, whereas fall time and overall pulse duration are less im- portant. Lasers pumped with this approach need to have very low thresholds which can now be routinely created using (one- dimensional) distributed feedback lasers. In this particular case stripe-shaped excitation with linearly polarized light is benefi- cial. Arrays of micron-sized flip-chip LEDs have been arranged in an appropriate stripe shape and the array dimensions were chosen such that the divergence of LED emission does not cause a loss in peak intensity. These micro-LED arrays have successfully been used to pump OSLs with thresholds near 300 W/cm 2 (∼9 ns rise time, 35 ns pulse duration), paving the
61 citations
TL;DR: In this paper, the authors present a theoretical model that accommodates the influence of concentration quenching on material gain and employ it to study the novel dye molecule 2-(4-(bis(4-(tert-butyl)phenyl)amino)benzylidene)malononitrile (PMN) and the well-established dye molecule 4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM) embedded in poly(methyl meth
Abstract: The optimization of material gain in optically pumped dye-doped polymer thin films is an important task in the development of organic solid-state lasers. In this work, we present a theoretical model that accommodates the influence of concentration quenching on material gain and employ it to study the novel dye molecule 2-(4-(bis(4-(tert-butyl)phenyl)amino)benzylidene)malononitrile (PMN) and the well-established dye molecule 4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM) embedded in poly(methyl methacrylate) (PMMA). Polycarbonate was tested as an alternative host material for PMN. The material gain in these dye-doped polymer thin films was determined by the variable stripe length method. The inclusion of concentration quenching in the material gain expression is able to significantly reduce the overestimation of the gain efficiency inherent to a linear model.
11 citations
04 Mar 2019
TL;DR: In this paper, the simulation, design and experimental validation of various PECVD silicon nitride photonic building blocks required for the implementation of a CMOS-compatible photonic integrated circuit technology platform operating in the 850 nm and 600 nm wavelength domain are reported.
Abstract: We report the simulation, design and experimental validation of various PECVD silicon nitride photonic building blocks required for the implementation of a CMOS-compatible photonic integrated circuit technology platform operating in the 850 nm and 600 nm wavelength domain. In particular, we discuss an inverted taper structure for efficient coupling of light to and from the chip, propagation and bend losses as well as broadband power and polarization beam splitters in the 850 nm region. In the 600 nm wavelength region, we demonstrate the realization of an optically pumped integrated dye-doped polymer laser that couples its laser light directly into a silicon nitride waveguide.
11 citations