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Journal ArticleDOI

Organic thin-film transistors: a review of recent advances

TL;DR: This paper review in more detail related work that originated at IBM during the last four years and has led to the fabrication of high-performance organic transistors on flexible, transparent plastic substrates requiring low operating voltages.
Abstract: In this paper we review recent progress in materials, fabrication processes, device designs, and applications related to organic thin-film transistors (OTFTs), with an emphasis on papers published during the last three years. Some earlier papers that played an important role in shaping the OTFT field are included, and a number of previously published review papers that cover that early period more completely are referenced. We also review in more detail related work that originated at IBM during the last four years and has led to the fabrication of high-performance organic transistors on flexible, transparent plastic substrates requiring low operating voltages.
Citations
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Journal ArticleDOI
22 Oct 2004-Science
TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Abstract: We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 10 13 per square centimeter and with room-temperature mobilities of ∼10,000 square centimeters per volt-second can be induced by applying gate voltage.

55,532 citations

Journal ArticleDOI
25 Nov 2004-Nature
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Abstract: Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.

7,301 citations

Journal ArticleDOI
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
Abstract: Organic thin-film transistors (OTFTs) have lived to see great improvements in recent years. This review presents new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of OTFTs. The shifted focus in research from novel chemical structures to fabrication technologies that optimize morphology and structural order is underscored by chapters on vacuum-deposited and solution-processed organic semiconducting films. Finally, progress in the growing field of the n-type OTFTs is discussed in ample detail. The Figure, showing a pentacene film edge on SiO2, illustrates the morphology issue.

4,804 citations

Journal ArticleDOI
TL;DR: Electronic Coupling in Oligoacene Derivatives: Factors Influencing Charge Mobility, and the Energy-Splitting-in-Dimer Method 3.1.
Abstract: 2.2. Materials 929 2.3. Factors Influencing Charge Mobility 931 2.3.1. Molecular Packing 931 2.3.2. Disorder 932 2.3.3. Temperature 933 2.3.4. Electric Field 934 2.3.5. Impurities 934 2.3.6. Pressure 934 2.3.7. Charge-Carrier Density 934 2.3.8. Size/molecular Weight 935 3. The Charge-Transport Parameters 935 3.1. Electronic Coupling 936 3.1.1. The Energy-Splitting-in-Dimer Method 936 3.1.2. The Orthogonality Issue 937 3.1.3. Impact of the Site Energy 937 3.1.4. Electronic Coupling in Oligoacene Derivatives 938

3,635 citations

Journal ArticleDOI
TL;DR: The current status of the field of organic solar cells and the important parameters to improve their performance are discussed in this paper. But, the two competitive production techniques used today are either wet solution processing or dry thermal evaporation of the organic constituents.
Abstract: Organic solar cell research has developed during the past 30 years, but especially in the last decade it has attracted scientific and economic interest triggered by a rapid increase in power conversion efficiencies. This was achieved by the introduction of new materials, improved materials engineering, and more sophisticated device structures. Today, solar power conversion efficiencies in excess of 3% have been accomplished with several device concepts. Though efficiencies of these thin-film organicdevices have not yet reached those of their inorganic counterparts (η ≈ 10–20%); the perspective of cheap production (employing, e.g., roll-to-roll processes) drives the development of organic photovoltaic devices further in a dynamic way. The two competitive production techniques used today are either wet solution processing or dry thermal evaporation of the organic constituents. The field of organic solar cells profited well from the development of light-emitting diodes based on similar technologies, which have entered the market recently. We review here the current status of the field of organic solar cells and discuss different production technologies as well as study the important parameters to improve their performance.

2,492 citations


Cites background from "Organic thin-film transistors: a re..."

  • ...Charge carrier mobilities in films of molecules and conjugated polymers often depend on the nanoscopic order, which can be manipulated by the preparation conditions.110–113 For example, a preferential orientation of polymer backbones parallel to the substrate114,115 gives rise to an anisotropic charge transport.112,113 An overview on some materials used for organic field-effect transistors (FETs) is reported by Dimitrakopoulos.15 However, charge transport in FETs is in lateral direction (parallel to the substrate) contrary to solar cells and most LEDs....

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  • ...Organic semiconductors generally are materials exhibiting low mobilities, ranging between ≈10 to 10 cm(2)/Vs.(15) This directly limits the active layer thickness of organic photovoltaic devices....

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  • ...An overview on some materials used for organic field-effect transistors (FETs) is reported by Dimitrakopoulos.(15) However, charge transport in FETs is in lateral direction (parallel to the substrate) contrary to solar cells and most LEDs....

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References
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Journal ArticleDOI
14 Oct 1999-Nature
TL;DR: In this article, the authors used thin-film, field effect transistor structures to probe the transport properties of the ordered microcrystalline domains in the conjugated polymer poly(3-hexylthiophene), P3HT.
Abstract: Self-organization in many solution-processed, semiconducting conjugated polymers results in complex microstructures, in which ordered microcrystalline domains are embedded in an amorphous matrix1. This has important consequences for electrical properties of these materials: charge transport is usually limited by the most difficult hopping processes and is therefore dominated by the disordered matrix, resulting in low charge-carrier mobilities2 (⩽10-5 cm2 V-1 s-1). Here we use thin-film, field-effect transistor structures to probe the transport properties of the ordered microcrystalline domains in the conjugated polymer poly(3-hexylthiophene), P3HT. Self-organization in P3HT results in a lamella structure with two-dimensional conjugated sheets formed by interchain stacking. We find that, depending on processing conditions, the lamellae can adopt two different orientations—parallel and normal to the substrate—the mobilities of which differ by more than a factor of 100, and can reach values as high as 0.1 cm2 V-1 s-1 (refs 3, 4). Optical spectroscopy of the field-induced charge, combined with the mobility anisotropy, reveals the two-dimensional interchain character of the polaronic charge carriers, which exhibit lower relaxation energies than the corresponding radical cations on isolated one-dimensional chains. The possibility of achieving high mobilities via two-dimensional transport in self-organized conjugated lamellae is important for applications of polymer transistors in logic circuits5 and active-matrix displays4,6.

4,306 citations


"Organic thin-film transistors: a re..." refers background in this paper

  • ...1 cm(2) V(21) s(21) from highly regioregular poly(3-hexylthiophene) have been attributed to this surface modification process [35, 57, 58]....

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  • ...Spin-coated films of regioregular poly(3-hexylthiophene) are also well-ordered, but the lamellae adopt different orientations depending on the degree of regioregularity [57]....

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Book
Yuan Taur1, Tak H. Ning1
01 Jan 2016
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Abstract: Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

2,680 citations

Journal ArticleDOI
12 Jun 1998-Science
TL;DR: An all-polymer semiconductor integrated device is demonstrated with a high-mobility conjugated polymer field-effect transistor driving a polymer light-emitting diode (LED) of similar size, which represents a step toward all- polymer optoelectronic integrated circuits such as active-matrix polymer LED displays.
Abstract: An all-polymer semiconductor integrated device is demonstrated with a high-mobility conjugated polymer field-effect transistor (FET) driving a polymer light-emitting diode (LED) of similar size. The FET uses regioregular poly(hexylthiophene). Its performance approaches that of inorganic amorphous silicon FETs, with field-effect mobilities of 0.05 to 0.1 square centimeters per volt second and ON-OFF current ratios of >10 6 . The high mobility is attributed to the formation of extended polaron states as a result of local self-organization, in contrast to the variable-range hopping of self-localized polarons found in more disordered polymers. The FET-LED device represents a step toward all-polymer optoelectronic integrated circuits such as active-matrix polymer LED displays.

2,657 citations


"Organic thin-film transistors: a re..." refers background in this paper

  • ...Both substoichiometric SiO2 and hydrazine are reducing agents which act to dedope the poly(3-alkylthiophene) film [35, 58]....

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  • ...1 cm(2) V(21) s(21) from highly regioregular poly(3-hexylthiophene) have been attributed to this surface modification process [35, 57, 58]....

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  • ...In addition, it has been shown that deposition onto a flat substrate (top-contact device) is favorable compared to deposition onto prefabricated source and drain electrodes (bottom-contact device), yielding mobilities that are typically larger by a factor of 2 [35, 58]....

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  • ...It is possible to achieve high on– off ratios by preparing and testing devices in a dry N2 atmosphere [35, 58]....

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Journal ArticleDOI
TL;DR: In this paper, the performance of organic field effect transistors (OFETs) is examined in terms of field effect mobility and on-off current ratio, and the most prominent fabrication techniques are described.
Abstract: Organic field-effect transistors (OFETs) were first described in 1987. Their characteristics have undergone spectacular improvements during the last two or three years. At the same time, several models have been developed to rationalize their operating mode. In this review, we examine the performance of OFETs as revealed by recently published data, mainly in terms of field-effect mobility and on–off current ratio. We compare the various compounds that have been used as the active component, and describe the most prominent fabrication techniques. Finally, we analyze the charge transport mechanisms in organic solids, and the resulting models of OFETs.

2,380 citations


"Organic thin-film transistors: a re..." refers background in this paper

  • ...Their I–V characteristics can be adequately described by models developed for inorganic semiconductors [46], as shown earlier [11, 13, 15, 28, 47, 48]....

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