Oscillatory behaviour of resistivity with thickness in bismuth thin films
TL;DR: In this article, it was shown that resistivity oscillates with thickness both for unannealed and annealed films and that the same kind of oscillatory behaviour with thickness is also observed in the case of defect resistivity.
About: This article is published in Vacuum.The article was published on 1981-01-01. It has received 5 citations till now. The article focuses on the topics: Electrical resistivity and conductivity & Thin film.
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TL;DR: In this paper, the initial lattice distortion energy spectra of as-grown bismuth thin films have been evaluated and it is found that the defects have preferential activation energy values around 1.06 eV, 1.14 eV and 1.32 ev.
Abstract: Bismuth thin films of various thicknesses between 15 nm and 350 nm were vacuum deposited at room temperature on to glass substrates, immediately after which they were twice heat treated at a uniform rate. During the heat treatment, the resistance changes were monitored and, using these data, the initial lattice distortion energy spectra of as-grown bismuth thin films have been evaluated. It is found that the defects have preferential activation energy values around 1.06 eV, 1.14 eV and 1.32 ev. It is also found that ∫F0 (E) dE oscillates with thickness, which is attributed to the quantum size effect.
6 citations
DOI•
01 Jan 2012
TL;DR: In this article, the influence of the electrolyte and the deposition potential on the electrochemical deposition of Bi$1-x}$Sb$_x$ nanowires in polymer templates made of polycarbonate (PC) and poly(ethylene terephthalate) (PET) was investigated.
Abstract: Bi$_{1-x}$Sb$_x$ nanowires with controlled diameter ($20$ to $200$,nm) and composition over a wide range from $x = 0$ to $05$ and $x=1$ were fabricated by electrochemical deposition in etched ion-track templates These nanowires are interesting for the investigation of the influence of quantum-size effects on the thermoelectric efficiency The influence of the electrolyte and the deposition potential on the electrochemical deposition of Bi$_{1-x}$Sb$_x$ nanowires in polymer templates made of polycarbonate (PC) and poly(ethylene terephthalate) (PET) was investigated Composition, crystalline orientation, and crystallite size of the nanowires were measured using X-ray diffraction and scanning and transmission electron microscopy It was demonstrated that the composition of the nanowires can be adjusted by the concentrations of bismuth and antimony in the electrolyte and the deposition potential Nanowires grown in PET exhibited a pronounced surface roughness compared to the nanowires deposited in PC and offer a novel possibility for the structuring of the nanowire surface to increase the thermoelectrical efficiency by enhanced phonon surface scattering Seebeck coefficient and temperature dependence of the resistance of nanowire arrays were measured in a cryostat for temperatures down to $sim 30$,K The absolute value of the Seebeck coefficient decreased with decreasing temperature and was lower than the value of the respective bulk material
4 citations
Cites background from "Oscillatory behaviour of resistivit..."
...1960ies and later.(14,15) For a critical film thickness of 30 nm, a transition from semi-metal to semi-conductor was observed in Bi films....
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TL;DR: In this paper, Wismuth thin films of different thicknesses between about 20 and 225 nm are vacuum deposited at room temperature in a vacuum of 3 × 10−3 Pa. The films are heat-treated "in situ" and the resistances monitored.
Abstract: Bismuth thin films of different thicknesses between about 20 and 225 nm are vacuum deposited at room temperature in a vacuum of 3 × 10−3 Pa. The films are heat-treated “in situ” and the resistances monitored. It is found that the resistivity-temperature plots of the films after heat-treatment are non-linear and exhibit a minimum whose position is a function of thickness. It is also found that the films behave as semiconductors, the band gap decreasing with increasing thickness. The observations are interpreted on the basis of quantum size effect and the limitation of the electronic mean free path by the grain size of the films.
Dunne Wismuth-Schichten verschiedener Dicken zwischen 20 und 225 nm werden bei Zimmer-temperatur im Vakuum von 3 × 10−3 Pa hergestellt. Die Schichten werden “in situ” getempert und der Widerstand verfolgt. Es wird gefunden, das die Widerstands-Temperatur-Verlaufe der Schichten nach der Warmebehandlung nichtlinear sind und ein Minimum aufweisen, dessen Lage von der Schichtdicke abhangt. Es wird ebenfalls gefunden, das sich die Schichten wie Halbleiter verhalten, wobei die Bandlucke mit zunehmender Schichtdicke abnimmt. Die Beobachtungen werden auf der Grundlage des Quantensize-Effekts und der Begrenzung der mittleren freien Weglange der Elektronen durch die Korngrose der Schichten erklart.
3 citations
TL;DR: In this paper, the photoemission current (j) and the differential capacitance of the double layer (C) on 20-200 nm thick bismuth films have been measured.
2 citations
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TL;DR: In this article, the initial lattice distortion energy spectra of the films have been determined from the resistance-temperature data, and it is found that the resistivity values for films of different thicknesses are in good agreement with the size effect theory.
23 citations
17 citations
TL;DR: In this paper, the authors investigated the resistivity ϱ, Hall coefficient RH and Hall mobility φ as functions of film thickness for vacuum-evaporated thin Cd3As2 films.
17 citations
TL;DR: In this article, the electrical resistivities of thin bismuth films, either in step-up series or a fixed thickness, were measured between 4.2 and 320 K. This scatter became more pronounced with decreasing temperature and it was due to the variation of the TCR above liquid nitrogen temperature.
17 citations
15 citations