Journal ArticleDOI
Oxidation kinetics of Si and SiGe by dry rapid thermal oxidation, in-situ steam generation oxidation and dry furnace oxidation
Fabien Rozé,Olivier Gourhant,Elisabeth Blanquet,François Bertin,Marc Juhel,F. Abbate,Clement Pribat,Romain Duru +7 more
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TLDR
In this article, a new quantitative analysis methodology of oxidation kinetics of SiGe on-insulator layers was introduced to bridge the gaps between these studies by covering various oxidation processes relevant to today's technological needs.Abstract:
The fabrication of ultrathin compressively strained SiGe-On-Insulator layers by the condensation technique is likely a key milestone towards low-power and high performances FD-SOI logic devices. However, the SiGe condensation technique still requires challenges to be solved for an optimized use in an industrial environment. SiGe oxidation kinetics, upon which the condensation technique is founded, has still not reached a consensus in spite of various studies which gave insights into the matter. This paper aims to bridge the gaps between these studies by covering various oxidation processes relevant to today's technological needs with a new and quantitative analysis methodology. We thus address oxidation kinetics of SiGe with three Ge concentrations (0%, 10%, and 30%) by means of dry rapid thermal oxidation, in-situ steam generation oxidation, and dry furnace oxidation. Oxide thicknesses in the 50 A to 150 A range grown with oxidation temperatures between 850 and 1100 °C were targeted. The present work shows first that for all investigated processes, oxidation follows a parabolic regime even for thin oxides, which indicates a diffusion-limited oxidation regime. We also observe that, for all investigated processes, the SiGe oxidation rate is systematically higher than that of Si. The amplitude of the variation of oxidation kinetics of SiGe with respect to Si is found to be strongly dependent on the process type. Second, a new quantitative analysis methodology of oxidation kinetics is introduced. This methodology allows us to highlight the dependence of oxidation kinetics on the Ge concentration at the oxidation interface, which is modulated by the pile-up mechanism. Our results show that the oxidation rate increases with the Ge concentration at the oxidation interface.read more
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Journal ArticleDOI
Etch Control and SiGe Surface Composition Modulation by Low Temperature Plasma Process for Si/SiGe Dual Channel Fin Application
TL;DR: In this article, the authors discuss Si-SiGe etch characteristics as well as SiGe surface composition modification, and demonstrate to etch Si/SiGe dual channel fin with depth and CD value control.
Journal ArticleDOI
Effect of H2S pre-annealing treatment on interfacial and electrical properties of HfO2/Si1−xGex (x = 0–0.3)
Woohui Lee,Changmin Lee,Jinyong Kim,Jehoon Lee,Deokjoon Eom,Jae Chan Park,Tae Joo Park,Hyoungsub Kim +7 more
TL;DR: In this paper, the effect of H2S pre-annealing treatment on a Si1−xGex alloy film, the interfacial and electrical characteristics of atomic-layer-deposited HfO2/Si1−XGex were studied while varying the Ge concentration (x value) from 0 to 0.3.
Journal ArticleDOI
Interface reaction kinetics in SiGe oxidation
TL;DR: In this paper, the SiGe oxidation kinetics and its effects on the generation of interface defects are discussed by considering the GeO desorption as well as Ge precipitation in SiGe gate stacks.
Journal ArticleDOI
Crystal quality of SiGe films fabricated by the condensation technique and characterized by medium energy ion scattering
TL;DR: In this paper, the crystal quality of SiGe-on-insulator (SGOI) films fabricated by the condensation technique is measured by the medium energy ion scattering technique using the channeling effect.
Proceedings ArticleDOI
Reduced oxygen partial pressure SiGe condensation for the fabrication of compressively strained SGOI substrates
Damien Valenducq,Olivier Gourhant,Elisabeth Blanquet,Fabien Deprat,F. Abbate,Veronique Guyader,Denis Rouchon +6 more
TL;DR: In this paper, the use of a low oxygen partial pressure dry furnace oxidation process for the fabrication of ultra-thin compressively strained SGOI layers was reported, and the effect of reduced oxygen partial pressures on oxidation kinetics and Ge depth profile evolution was shown.
References
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Journal ArticleDOI
General Relationship for the Thermal Oxidation of Silicon
Bruce E. Deal,A.S. Grove +1 more
TL;DR: In this paper, the thermaloxidation kinetics of silicon are examined in detail based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived.
Journal ArticleDOI
Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
TL;DR: In this article, the authors compute the band structure and shear deformation potentials of strained Si, Ge, and SiGe alloys, and fit the theoretical results to experimental data on the phonon-limited carrier mobilities in bulk Si and Ge.
Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
TL;DR: Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.
Journal ArticleDOI
Stress in thermal SiO2 during growth
TL;DR: In this paper, the authors measured the stress present in thermal SiO2 at temperatures during growth in wet O2 and found that compressive stress on the order of 7×109 dyn/cm2 is generated in the SiO 2 during growth at 975 and 1000 °C.
Journal ArticleDOI
A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs
TL;DR: In this article, a novel fabrication technique for relaxed and thin SiGe layers on buried oxide (BOX) layers, i.e., SiGe on insulator (SGOI), with a high Ge fraction is proposed and demonstrated for application to strained-Si metal-oxide-semiconductor field effect transistors (MOSFETs).