Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
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TLDR
The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.Abstract:
Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.read more
Citations
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Journal ArticleDOI
Solution processed Li5AlO4 dielectric for low voltage transistor fabrication and its application in metal oxide/quantum dot heterojunction phototransistors
Anand Sharma,Nitesh K. Chourasia,Anumol Sugathan,Yogesh Kumar,Satyabrata Jit,Shun-Wei Liu,Anshu Pandey,Sajal Biring,Bhola N. Pal,Bhola N. Pal +9 more
TL;DR: Li5AlO4, a well-known material for solid state electrolyte application, has never been considered hitherto as a gate dielectric of metal oxide thin film transistors (TFTs) as discussed by the authors.
Journal ArticleDOI
Synthesis and dielectric properties of nanocrystalline oxide perovskites, [KNbO3]1−x[BaNi0.5Nb0.5O3−δ]x, derived from potassium niobate KNbO3 by gel collection
Julien Lombardi,Julien Lombardi,Frederick A. Pearsall,Frederick A. Pearsall,Wanlu Li,Wanlu Li,Stephen O'Brien,Stephen O'Brien +7 more
TL;DR: In this article, a chemical solution processing method based on sol-gel chemistry was used to obtain a set of perovskite compounds of the formula [KNbO3]1−x[BaNi0.5Nb0.3−δ]x, called KBNNO, a class of visible light absorbing ferroelectric photovoltaic materials, with a tunable bandgap as a function of x.
Journal ArticleDOI
A Comparative Study on Fluorination and Oxidation of Indium–Gallium–Zinc Oxide Thin-Film Transistors
TL;DR: Both fluorination and oxidation have been employed to passivate defects in indium-gallium-zinc oxide thin-film transistors, leading to enhanced device attributes as discussed by the authors, and it is presently reported that the former is more effective than the latter, requiring shorter process time, resulting in reduced initial defect population, and more robust resistance against process-and stress-induced defect generation.
Journal ArticleDOI
Enhancement of near-infrared detectability from InGaZnO thin film transistor with MoS2 light absorbing layer.
TL;DR: An enhancement of near-infrared (NIR) detectability from amorphous InGaZnO (α-IGZO) thin film transistor in conjunction with randomly distributed molybdenum disulfide (MoS2) flakes is reported.
References
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TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
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Organic Thin Film Transistors for Large Area Electronics
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
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Polymer‐Fullerene Bulk‐Heterojunction Solar Cells
Christoph J. Brabec,Srinivas (Jimmy) Gowrisanker,Jonathan Halls,Darin W. Laird,Shijun Jia,Shawn P. Williams +5 more
TL;DR: An outlook is presented on what will be required to drive this young photovoltaic technology towards the next major milestone, a 10% power conversion efficiency, considered by many to represent the efficiency at which OPV can be adopted in wide-spread applications.