Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
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TLDR
The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.Abstract:
Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.read more
Citations
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Journal ArticleDOI
Chemical durability engineering of solution-processed oxide thin films and its application in chemically-robust patterned oxide thin-film transistors
Sung Woon Cho,Da Eun Kim,Won Jun Kang,Bora Kim,D.H. Yoon,Kyung Su Kim,Hyung Koun Cho,Yong-Hoon Kim,Yunseok Kim +8 more
TL;DR: In this article, the chemical durability of Sn-incorporated ZnO (ZTO) films was investigated using temperature-controlled thermal annealing, based on the chemical reaction route, which induced uniformly patterned, highly electrical, chemically robust ZTO channels.
Journal ArticleDOI
Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate
TL;DR: In this work, fully transparent high performance double-channel indium-tin-oxide/Al–Sn–Zn–O thin-film transistors (ITO/ATZO TFTs) are successfully fabricated on glass by radio frequency (RF) magnetron sputtering to demonstrate outstanding electrical performances.
Journal ArticleDOI
Dynamic Logic Circuits Using a-IGZO TFTs
Jong-Seok Kim,Jun-Hwan Jang,Yong-Duck Kim,Jung-Woo Byun,Ki-Lim Han,Jin-Seong Park,Byong-Deok Choi +6 more
TL;DR: In this paper, the dynamic logic circuits using n-type a-IGZO TFTs are proposed to resolve the power and circuit area issues, and the measurement results show that the proposed dynamic logic circuit consumes no steady-state current and the circuit area is reduced by 93.1%.
Journal ArticleDOI
Solution-Processed Neodymium Oxide/ZnO Thin-Film Transistors with Electron Mobility in Excess of 65 cm V−1 s−1
Mazran Bin Esro,Oleg Kolosov,Vlad Stolojan,Peter John Jones,William I. Milne,William I. Milne,George Adamopoulos +6 more
TL;DR: In this article, the optical, dielectric, electric, structural, surface, and interface properties of solution processed Nd2O3 thin films are investigated using a wide range of characterization techniques.
Journal ArticleDOI
The effect of a zinc–tin-oxide layer used as an etch-stopper layer on the bias stress stability of solution-processed indium–gallium–zinc-oxide thin-film transistors
TL;DR: In this article, bias stress stability of solution-processed indium-gallium-zincoxide thin-film transistors (IGZO TFTs) using zinc-tinoxide (ZTO) as the etch-stopper layer was investigated.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
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Polymer‐Fullerene Bulk‐Heterojunction Solar Cells
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