Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
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TLDR
The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.Abstract:
Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.read more
Citations
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Recent Progress on High‐Capacitance Polymer Gate Dielectrics for Flexible Low‐Voltage Transistors
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Ultra-Flexible, “Invisible” Thin-Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends
Xinge Yu,Xinge Yu,Li Zeng,Nanjia Zhou,Peijun Guo,Fengyuan Shi,Donald B. Buchholz,Q. Ma,Junsheng Yu,Vinayak P. Dravid,Robert P. H. Chang,Michael J. Bedzyk,Tobin J. Marks,Antonio Facchetti +13 more
TL;DR: Ultra-flexible and transparent metal oxide transistors are developed by doping In2 O3 films with poly(vinylphenole) (PVP) by adjusting the In2O3 :PVP weight ratio, crystallization is frustrated, and conducting pathways for efficient charge transport are maintained.
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Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices
TL;DR: In this article, an up-to-date review on both the fundamental understanding of materials physics of oxide semiconductors, and recent research progress on design of new materials and highperforming thin-film transistor (TFT) devices in the context of fundamental understanding is presented.
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Evaporated tellurium thin films for p-type field-effect transistors and circuits
Chunsong Zhao,Chaoliang Tan,Der Hsien Lien,Der Hsien Lien,Xiaohui Song,Matin Amani,Mark Hettick,Hnin Yin Yin Nyein,Zhen Yuan,Lu Li,Mary Scott,Ali Javey +11 more
TL;DR: Tellurium thin films thermally evaporated at cryogenic temperatures enable the fabrication of high-performance wafer-scale p-type field-effect transistors and three-dimensional circuits.
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Solution-deposited Zr-doped AlOx gate dielectrics enabling high-performance flexible transparent thin film transistors
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References
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Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
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TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
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High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
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Organic Thin Film Transistors for Large Area Electronics
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
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Polymer‐Fullerene Bulk‐Heterojunction Solar Cells
Christoph J. Brabec,Srinivas (Jimmy) Gowrisanker,Jonathan Halls,Darin W. Laird,Shijun Jia,Shawn P. Williams +5 more
TL;DR: An outlook is presented on what will be required to drive this young photovoltaic technology towards the next major milestone, a 10% power conversion efficiency, considered by many to represent the efficiency at which OPV can be adopted in wide-spread applications.