Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
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TLDR
The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.Abstract:
Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.read more
Citations
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FeIn2S4 Nanocrystals: A Ternary Metal Chalcogenide Material for Ambipolar Field-Effect Transistors.
Hyun-Jung Kim,Anand P. Tiwari,Eunhee Hwang,Yunhee Cho,Heemin Hwang,Sora Bak,Yeseul Hong,Hyoyoung Lee +7 more
TL;DR: A ternary metal chalcogenide nanocrystal material, FeIn2S4, is introduced as a solution‐processable ambipolar channel material for field‐effect transistors (FETs) and may be a promising alternative semiconducting material for next‐generation integrated circuit development.
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Structure–Charge Transport Relationships in Fluoride-Doped Amorphous Semiconducting Indium Oxide: Combined Experimental and Theoretical Analysis
Aritra Sil,Laleh Avazpour,Elise A. Goldfine,Qing Ma,Wei Huang,Binghao Wang,Michael J. Bedzyk,Julia E. Medvedeva,Antonio Facchetti,Tobin J. Marks +9 more
TL;DR: Anion doping of transparent amorphous metal oxide (a-MO) semiconductors is virtually unexplored but offers the possibility of creating unique optoelectronic materials owing to the chemical tuning,.
Proceedings ArticleDOI
Film profile engineering (FPE): A new concept for manufacturing of short-channel metal oxide TFTs
TL;DR: In this article, a film profile engineering (FPE) concept which utilizes the unique features of various deposition tools to tailor and optimize the profile of the deposited films was demonstrated with the fabricated ZnO TFTs.
Journal ArticleDOI
High‐Performance Hybrid Complementary Logic Inverter through Monolithic Integration of a MEMS Switch and an Oxide TFT
Yong-Ha Song,Sang-Joon Kenny Ahn,Min-Wu Kim,Jeong Oen Lee,Chi-Sun Hwang,Jae-Eun Pi,Seung-Deok Ko,Kwang-Wook Choi,Sang-Hee Ko Park,Jun-Bo Yoon +9 more
TL;DR: A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p- type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits.
Journal ArticleDOI
Effect of interfacial layer on device performance of metal oxide thin-film transistor with a multilayer high-k gate stack
Dun-Bao Ruan,Po-Tsun Liu,Yu Chuan Chiu,Po Yi Kuo,Min Chin Yu,Kai Zhi Kan,Ta Chun Chien,Yi Heng Chen,Simon M. Sze +8 more
TL;DR: In this article, the effect of interfacial layer material (SiO2 or Ga2O3) on the performance of amorphous indium gallium zinc oxide thin-film transistors with multilayer high-k gate stack is investigated.
References
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Polymer‐Fullerene Bulk‐Heterojunction Solar Cells
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