Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
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TLDR
The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.Abstract:
Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.read more
Citations
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Persistent photoconductivity effects in printed n-channel organic transistors
TL;DR: In this paper, the authors investigated the effect of green light irradiation on top-gate n-type organic transistors and found that the photo phenomenon is due to holes trapped and released at the dielectric/semiconductor interface and a smaller number of positive fixed charges generated in the semiconductor layer.
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Ten Years Progress of Electrical Detection of Heavy Metal Ions (HMIs) Using Various Field-Effect Transistor (FET) Nanosensors: A Review
Shaili Falina,Mohd Syamsul,Nuha Abd Rhaffor,Sofiyah Sal Hamid,Khairu Anuar Mohamed Zain,Asrulnizam Abd Manaf,Hiroshi Kawarada +6 more
TL;DR: In this paper, the authors provide a condensed overview of the contribution of certain semiconductor substrates in the development of chemical and biosensor FETs for HMI detection in the past decade.
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High-Gain Complementary Inverter Based on Corbino p-Type Tin Monoxide and n-Type Indium-Gallium-Zinc Oxide Thin-Film Transistors
Hyo-Jun Joo,Min-Gyu Shin,Soo-Hun Kwon,Ha-Yun Jeong,Hwan-Seok Jeong,Dae-Hwan Kim,Xiaoshi Jin,Sang-Hun Song,Hyuck-In Kwon +8 more
TL;DR: In this paper, the authors investigated the electrical characteristics of Corbino structure p-type tin monoxide (SnO) thin-film transistors (TFTs) and demonstrated a high-performance complementary logic inverter composed of corbino p type SnO and n-type indium-gallium-zinc oxide (IGZO) TFTs.
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Eliminating the charge compensation effect in Ga-doped SnO2 films by N doping
TL;DR: In this paper, Nitrous atoms were introduced into the SnO2 lattice by direct-current magnetron sputtering at the optimum substrate temperature of 400°C in a gas mixture of argon and 50% nitrogen.
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Threshold Voltage Adjustment in Hybrid-Microstructural ITO-Stabilized ZnO TFTs via Gate Electrode Engineering
TL;DR: In this paper, the positive threshold voltage (V) shift of top-gated metal oxide (MO) thin-film transistors (TFTs) was found to be much larger than the work function (WF) difference of the GEs.
References
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Polymer‐Fullerene Bulk‐Heterojunction Solar Cells
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