Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
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TLDR
The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.Abstract:
Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.read more
Citations
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Influence of annealing temperature on properties of room-temperature rf-sputtered CuAlOx:Ca thin films
TL;DR: The influence of annealing temperature on the characteristics of rf-sputtered CuAlO x :Ca thin films is studied in this article, where they show an amorphous/nanocrystalline phase with p-type conductivity, as evidenced by Hall measurements and Seebeck coefficient measurements.
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Solution-Processed Ultrathin Organic Semiconductor Film: Toward All-Transparent Highly Stable Transistors
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Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors
Wei Ou-Yang,Nobuhiko Mitoma,Takio Kizu,Xu Gao,Meng-Fang Lin,Toshihide Nabatame,Kazuhito Tsukagoshi +6 more
TL;DR: In this article, an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors was proposed to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study.
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Electrochemical Properties of Metal-Oxide-Coated Carbon Electrodes Prepared by Atomic Layer Deposition
TL;DR: Both Al2O3 and SnO2 films are stable in both neutral and acidic electrolytes even after repeated voltammetric scanning and open up the possibility of studying the effect of oxide supports on electrocatalytic reactions.
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A self-aligned high resolution patterning process for large area printed electronics
Won-Tae Park,Yong-Young Noh +1 more
TL;DR: In this article, a self-aligned patterning process compatible with directional coating processes for manufacturing printed electronic devices was proposed, where a hydrophobic self-assembled monolayer (SAM) is formed on a substrate surface and defined at a specific area by irradiation of 172 nm UV light for 3 min through a photomask.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Book
Semiconductor Material and Device Characterization
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Organic Thin Film Transistors for Large Area Electronics
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
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Polymer‐Fullerene Bulk‐Heterojunction Solar Cells
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