Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Abstract: Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.
Citations
More filters
TL;DR: In this article, a study of the flexibility of CdO-In2O3 alloy thin films, deposited on a polyethylene terephthalate (PET) substrate by radio frequency magnetron sputtering at room temperature, is presented.
Abstract: Due to their low-temperature deposition, high mobility (>10 cm2/V·s), and electrical conductivity, amorphous ionic oxide semiconductors (AIOSs) have received much attention for their applications in flexible and/or organic electro-optical devices. Here, we report on a study of the flexibility of CdO-In2O3 alloy thin films, deposited on a polyethylene terephthalate (PET) substrate by radio frequency magnetron sputtering at room temperature. Cd1-xInxO1+δ alloys with the composition of x > 0.6 are amorphous, exhibiting a high electron mobility of 40-50 cm2/V·s, a low resistivity of ∼3 × 10-4 Ω·cm, and high transmittance over a wide spectral window of 350 to >1600 nm. The flexibility of both crystalline and amorphous Cd1-xInxO1+δ films on the PET substrate was investigated by measuring their electrical resistivity after both compressive and tensile bending with a range of bending radii and repeated bending cycles. Under both compressive and tensile bending with Rb = 16.5 mm, no significant degradation was observed for both the crystalline and amorphous films up to 300 bending cycles. For a smaller bending radius, the amorphous film shows much less electrical degradation than the crystalline films under compressive bending due to less film delamination at the bending sites. On the other hand, for a small bending radius ( 90%. The OSCs fabricated on an amorphous Cd1-xInxO1+δ-coated flexible PET substrate achieve a promising PCE of 12.06%. Our results strongly suggest the technological potentials of amorphous Cd1-xInxO1+δ as a reliable and effective transparent conducting material for flexible and organic optoelectronic devices.
5 citations
27 Jun 2016
TL;DR: The characterization of fundamental analog and digital circuits with a-IGZO TFTs from measurements performed at normal ambient to find potential applications in low-cost large-area flexible systems.
Abstract: This paper presents the characterization of fundamental analog and digital circuits with a-IGZO TFTs from measurements performed at normal ambient. The fundamental blocks considered in this work include digital logic gates, a low-power single stage high-gain amplifier with capcacitive bootstrapping and a level shifter/buffer. These circuits are important functional blocks in analog/Mixed signal IC design with oxide TFTs. Being fabricated at low temperature (< 200 °C), they can find potential applications in low-cost large-area flexible systems.
5 citations
TL;DR: In this article, the dynamic and the static logic circuits using n-type amorphous indium-gallium-zincoxide (a-IGZO) thin-film transistors are compared in terms of stability for electrical stress.
Abstract: Prior research has reported that the device characteristics of amorphous indium–gallium–zinc-oxide (a-IGZO) thin-film transistors (TFTs) have been changed by instabilities due to electrical stress. Because positive bias stress and high current stress produce a positive threshold voltage shift, if the digital logic circuit is designed using a-IGZO TFTs, there is a high possibility that the circuit suffers from malfunction. In this letter, the dynamic and the static logic circuits using n-type a-IGZO TFTs are compared in terms of stability for electrical stress. In order to compare the stability of the two circuits, DC and AC signals are applied. The measurement results suggest that the dynamic logic circuit is much more stable than the static logic circuit regarding electrical stress.
5 citations
01 May 2017
TL;DR: In this article, self-patternable InZnO (IZO) thin-film transistors (TFTs) using photosensitive precursors were demonstrated, and solution-processed IZO films were patterned successfully.
Abstract: We demonstrated self-patternable InZnO (IZO) thin-film transistors (TFTs) using photosensitive precursors. UV-irradiated films became cross-linked and solution-processed IZO films were patterned successfully. Compared to self-patterned IZO TFTs using photosensitive activators, precursor-based self-patterned IZO TFTs have better electrical characteristics and stability due to having less organic residues.
5 citations
TL;DR: In this paper, two kinds of appropriate ATZO compositions are compared from several perspectives, including film material characteristics, device electrical performances, and fabrication process conditions, and the results show that the device with smaller amounts of dopants exhibits better crystal quality and an excellent subthreshold swing SS of 155 mV/dec.
Abstract: High-performance fully transparent Al–Sn–Zn–O thin-film transistors (ATZO TFTs) with excellent electrical performance have been successfully fabricated by RF magnetron sputtering on glass at low temperatures. Two kinds of appropriate ATZO compositions are compared from several perspectives, including film material characteristics, device electrical performances, and fabrication process conditions. Finally, we achieve two excellent ATZO TFTs with competitive advantages. The ATZO TFT with larger amounts of dopants exhibits a superior field effect mobility μFE of 102.38 cm2 V−1 s−1, an ON/OFF current ratio (Ion/Ioff) of 1.18 × 107, and a threshold voltage VT of 1.35 V. The device with smaller amounts of dopants demonstrates better crystal quality and an excellent subthreshold swing SS of 155 mV/dec. Furthermore, it is less affected by oxygen partial pressure. The ATZO thin films display a high transmittance of over 80% in the visible light range.
5 citations
References
More filters
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Abstract: Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.
7,301 citations
Book•
04 Jul 1990
TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
Abstract: Preface to Third Edition. 1 Resistivity. 1.1 Introduction. 1.2 Two-Point Versus Four-Point Probe. 1.3 Wafer Mapping. 1.4 Resistivity Profiling. 1.5 Contactless Methods. 1.6 Conductivity Type. 1.7 Strengths and Weaknesses. Appendix 1.1 Resistivity as a Function of Doping Density. Appendix 1.2 Intrinsic Carrier Density. References. Problems. Review Questions. 2 Carrier and Doping Density. 2.1 Introduction. 2.2 Capacitance-Voltage (C-V). 2.3 Current-Voltage (I-V). 2.4 Measurement Errors and Precautions. 2.5 Hall Effect. 2.6 Optical Techniques. 2.7 Secondary Ion Mass Spectrometry (SIMS). 2.8 Rutherford Backscattering (RBS). 2.9 Lateral Profiling. 2.10 Strengths and Weaknesses. Appendix 2.1 Parallel or Series Connection? Appendix 2.2 Circuit Conversion. References. Problems. Review Questions. 3 Contact Resistance and Schottky Barriers. 3.1 Introduction. 3.2 Metal-Semiconductor Contacts. 3.3 Contact Resistance. 3.4 Measurement Techniques. 3.5 Schottky Barrier Height. 3.6 Comparison of Methods. 3.7 Strengths and Weaknesses. Appendix 3.1 Effect of Parasitic Resistance. Appendix 3.2 Alloys for Contacts to Semiconductors. References. Problems. Review Questions. 4 Series Resistance, Channel Length and Width, and Threshold Voltage. 4.1 Introduction. 4.2 PN Junction Diodes. 4.3 Schottky Barrier Diodes. 4.4 Solar Cells. 4.5 Bipolar Junction Transistors. 4.6 MOSFETS. 4.7 MESFETS and MODFETS. 4.8 Threshold Voltage. 4.9 Pseudo MOSFET. 4.10 Strengths and Weaknesses. Appendix 4.1 Schottky Diode Current-Voltage Equation. References. Problems. Review Questions. 5 Defects. 5.1 Introduction. 5.2 Generation-Recombination Statistics. 5.3 Capacitance Measurements. 5.4 Current Measurements. 5.5 Charge Measurements. 5.6 Deep-Level Transient Spectroscopy (DLTS). 5.7 Thermally Stimulated Capacitance and Current. 5.8 Positron Annihilation Spectroscopy (PAS). 5.9 Strengths and Weaknesses. Appendix 5.1 Activation Energy and Capture Cross-Section. Appendix 5.2 Time Constant Extraction. Appendix 5.3 Si and GaAs Data. References. Problems. Review Questions. 6 Oxide and Interface Trapped Charges, Oxide Thickness. 6.1 Introduction. 6.2 Fixed, Oxide Trapped, and Mobile Oxide Charge. 6.3 Interface Trapped Charge. 6.4 Oxide Thickness. 6.5 Strengths and Weaknesses. Appendix 6.1 Capacitance Measurement Techniques. Appendix 6.2 Effect of Chuck Capacitance and Leakage Current. References. Problems. Review Questions. 7 Carrier Lifetimes. 7.1 Introduction. 7.2 Recombination Lifetime/Surface Recombination Velocity. 7.3 Generation Lifetime/Surface Generation Velocity. 7.4 Recombination Lifetime-Optical Measurements. 7.5 Recombination Lifetime-Electrical Measurements. 7.6 Generation Lifetime-Electrical Measurements. 7.7 Strengths and Weaknesses. Appendix 7.1 Optical Excitation. Appendix 7.2 Electrical Excitation. References. Problems. Review Questions. 8 Mobility. 8.1 Introduction. 8.2 Conductivity Mobility. 8.3 Hall Effect and Mobility. 8.4 Magnetoresistance Mobility. 8.5 Time-of-Flight Drift Mobility. 8.6 MOSFET Mobility. 8.7 Contactless Mobility. 8.8 Strengths and Weaknesses. Appendix 8.1 Semiconductor Bulk Mobilities. Appendix 8.2 Semiconductor Surface Mobilities. Appendix 8.3 Effect of Channel Frequency Response. Appendix 8.4 Effect of Interface Trapped Charge. References. Problems. Review Questions. 9 Charge-based and Probe Characterization. 9.1 Introduction. 9.2 Background. 9.3 Surface Charging. 9.4 The Kelvin Probe. 9.5 Applications. 9.6 Scanning Probe Microscopy (SPM). 9.7 Strengths and Weaknesses. References. Problems. Review Questions. 10 Optical Characterization. 10.1 Introduction. 10.2 Optical Microscopy. 10.3 Ellipsometry. 10.4 Transmission. 10.5 Reflection. 10.6 Light Scattering. 10.7 Modulation Spectroscopy. 10.8 Line Width. 10.9 Photoluminescence (PL). 10.10 Raman Spectroscopy. 10.11 Strengths and Weaknesses. Appendix 10.1 Transmission Equations. Appendix 10.2 Absorption Coefficients and Refractive Indices for Selected Semiconductors. References. Problems. Review Questions. 11 Chemical and Physical Characterization. 11.1 Introduction. 11.2 Electron Beam Techniques. 11.3 Ion Beam Techniques. 11.4 X-Ray and Gamma-Ray Techniques. 11.5 Strengths and Weaknesses. Appendix 11.1 Selected Features of Some Analytical Techniques. References. Problems. Review Questions. 12 Reliability and Failure Analysis. 12.1 Introduction. 12.2 Failure Times and Acceleration Factors. 12.3 Distribution Functions. 12.4 Reliability Concerns. 12.5 Failure Analysis Characterization Techniques. 12.6 Strengths and Weaknesses. Appendix 12.1 Gate Currents. References. Problems. Review Questions. Appendix 1 List of Symbols. Appendix 2 Abbreviations and Acronyms. Index.
6,573 citations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Abstract: Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success...
5,711 citations
IBM1
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
Abstract: Organic thin-film transistors (OTFTs) have lived to see great improvements in recent years. This review presents new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of OTFTs. The shifted focus in research from novel chemical structures to fabrication technologies that optimize morphology and structural order is underscored by chapters on vacuum-deposited and solution-processed organic semiconducting films. Finally, progress in the growing field of the n-type OTFTs is discussed in ample detail. The Figure, showing a pentacene film edge on SiO2, illustrates the morphology issue.
4,804 citations
TL;DR: An outlook is presented on what will be required to drive this young photovoltaic technology towards the next major milestone, a 10% power conversion efficiency, considered by many to represent the efficiency at which OPV can be adopted in wide-spread applications.
Abstract: Solution-processed bulk-heterojunction solar cells have gained serious attention during the last few years and are becoming established as one of the future photovoltaic technologies for low-cost power production. This article reviews the highlights of the last few years, and summarizes today's state-of-the-art performance. An outlook is given on relevant future materials and technologies that have the potential to guide this young photovoltaic technology towards the magic 10% regime. A cost model supplements the technical discussions, with practical aspects any photovoltaic technology needs to fulfil, and answers to the question as to whether low module costs can compensate lower lifetimes and performances.
3,084 citations