Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
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TLDR
The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.Abstract:
Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.read more
Citations
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Recent Progress in Inorganic Hole Transport Materials for Efficient and Stable Perovskite Solar Cells
TL;DR: In this article, a review summarizes the recent progresses in inorganic hole transport materials adopted in various device architectures, with their remarkable achievements in efficiency and long-term stability, demonstrating improved stability under rigorous conditions such as high temperature and longterm illumination.
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Aqueous Solution-Deposited Gallium Oxide Dielectric for Low-Temperature, Low-Operating-Voltage Indium Oxide Thin-Film Transistors: A Facile Route to Green Oxide Electronics
TL;DR: This study reported a novel aqueous route to fabricate Ga2O3 dielectric at low temperature and represents a significant step toward the development of low-cost, low-temperature, and large-area green oxide electronics.
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One-Dimensional Nanostructured Oxide Chemoresistive Sensors.
TL;DR: Sensor Laboratory research on the synthesis of metal oxide nanowires and novel heterostructures and their characterization and gas-sensing performance during exposure to different gas analytes has been presented and some new strategies adopted to enhance the performance of nanowire-based chemical sensor are presented in detail.
Journal ArticleDOI
Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films
Soo Hyun Kim,In-Hwan Baek,In-Hwan Baek,Da Hye Kim,Jung Joon Pyeon,Jung Joon Pyeon,Taek-Mo Chung,Seung Hyub Baek,Jinsang Kim,Jeong Hwan Han,Seong Keun Kim +10 more
TL;DR: In this article, the authors demonstrate high performance p-type thin film transistors (TFTs) with a SnO channel layer grown by atomic layer deposition (ALD) and demonstrate that the SnO films grown at 210 °C still contain defects and hole carriers, especially near the back-channel surface.
Journal ArticleDOI
Two-component solution processing of oxide semiconductors for thin-film transistors via self-combustion reaction
TL;DR: In this paper, a self-combustion of In and Zn salts coordinated with fuel and oxidizer ligands was used to generate exothermic heat at a relatively low annealing temperature.
References
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Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
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Organic Thin Film Transistors for Large Area Electronics
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
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Polymer‐Fullerene Bulk‐Heterojunction Solar Cells
Christoph J. Brabec,Srinivas (Jimmy) Gowrisanker,Jonathan Halls,Darin W. Laird,Shijun Jia,Shawn P. Williams +5 more
TL;DR: An outlook is presented on what will be required to drive this young photovoltaic technology towards the next major milestone, a 10% power conversion efficiency, considered by many to represent the efficiency at which OPV can be adopted in wide-spread applications.