Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
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TLDR
The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.Abstract:
Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.read more
Citations
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Journal ArticleDOI
Bidirectional Communication in an HF Hybrid Organic/Solution-Processed Metal-Oxide RFID Tag
Kris Myny,Maarten Rockele,Adrian Chasin,Duy-Vu Pham,Jürgen Steiger,Silviu Botnaras,Dennis Weber,Bernhard Herold,Jurgen Ficker,Bas van der Putten,Gerwin H. Gelinck,Jan Genoe,Wim Dehaene,Paul Heremans +13 more
TL;DR: This paper realized bidirectional communication between a reader system and thin-film RFID tag by introducing a novel protocol for the uplink communication.
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Highly stable thin film transistors using multilayer channel structure
TL;DR: In this article, the gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer was investigated.
Journal ArticleDOI
Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes
TL;DR: In this article, a review of recent progress and major trends in the field of flexible oxide thin film transistors (TFTs), fabricating with atomic layer deposition (ALD) processes is presented.
Journal ArticleDOI
A Bottom-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistor With an Inherent Etch-Stop and Annealing-Induced Source and Drain Regions
TL;DR: In this article, a bottom-gate indium-gallium-zinc oxide (IGZO) transistor with annealing-induced source and drain (S/D) regions is proposed.
Journal ArticleDOI
Transient photoresponse in amorphous In-Ga-Zn-O thin films under stretched exponential analysis
Jiajun Luo,Alexander U. Adler,Thomas O. Mason,D. Bruce Buchholz,Robert P. H. Chang,Matthew Grayson +5 more
TL;DR: In this paper, the authors investigated transient photoresponse and Hall effect in amorphous In-Ga-Zn-O thin films and observed a stretched exponential response which allows characterization of the activation energy spectrum with only three fit parameters.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Book
Semiconductor Material and Device Characterization
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Organic Thin Film Transistors for Large Area Electronics
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Polymer‐Fullerene Bulk‐Heterojunction Solar Cells
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