Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
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TLDR
The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.Abstract:
Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.read more
Citations
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Journal ArticleDOI
Hybrid organic–metal oxide multilayer channel transistors with high operational stability
Yen-Hung Lin,Yen-Hung Lin,Wen Li,Wen Li,Wen Li,Hendrik Faber,Hendrik Faber,Akmaral Seitkhan,Nikolaos A. Hastas,Nikolaos A. Hastas,Dongyoon Khim,Qiang Zhang,Xixiang Zhang,N. Pliatsikas,Leonidas Tsetseris,Panos Patsalas,Donal D. C. Bradley,Donal D. C. Bradley,Wei Huang,Wei Huang,Thomas D. Anthopoulos,Thomas D. Anthopoulos +21 more
TL;DR: In this article, a solution-processed multilayer channel composed of ultrathin layers of indium oxide, zinc oxide nanoparticles, ozone-treated polystyrene and compact zinc oxide was used to construct a transistor with high electron mobility and operational stability.
Journal ArticleDOI
Exploring the Leidenfrost Effect for the Deposition of High‐Quality In2O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors
Ivan Isakov,Hendrik Faber,Max Grell,Gwenhivir Wyatt-Moon,Nikos Pliatsikas,Thomas Kehagias,G. P. Dimitrakopulos,Panos P. Patsalas,Ruipeng Li,Thomas D. Anthopoulos,Thomas D. Anthopoulos +10 more
TL;DR: In this article, the growth mechanism of indium oxide (In2O3) layers processed via spray pyrolysis of an aqueous precursor solution in the temperature range of 100-300 °C and the impact on their electron transporting properties are studied.
Journal ArticleDOI
Polymer Doping Enables a Two-Dimensional Electron Gas for High-Performance Homojunction Oxide Thin-Film Transistors.
Yao Chen,Yao Chen,Wei Huang,Vinod K. Sangwan,Binghao Wang,Li Zeng,Gang Wang,Yan Huang,Zhiyun Lu,Michael J. Bedzyk,Mark C. Hersam,Tobin J. Marks,Antonio Facchetti +12 more
TL;DR: This is the first demonstration of 2DEG-based homojunction oxide TFTs via band offset achieved by simple polymer doping of the same MO material, and a mobility as high as 30 cm2 V-1 s-1 is achieved on a high-k ZrO2 dielectric in the homoj junction devices.
Journal ArticleDOI
Radiation-Tolerant Flexible Large-Area Electronics Based on Oxide Semiconductors
Tobias Cramer,Allegra Sacchetti,Maria Teresa Lobato,Pedro Barquinha,Vincent Fischer,Mohamed Benwadih,Jacqueline Bablet,Elvira Fortunato,Rodrigo Martins,Beatrice Fraboni +9 more
TL;DR: In this paper, the superior X-ray radiation hardness of oxide thin film transistors (TFTs) based on gallium-indium-zinc oxide is demonstrated, when compared to organic ones.
Journal ArticleDOI
P-Type Transparent Cu-Alloyed ZnS Deposited at Room Temperature
Rachel Woods-Robinson,Jason K. Cooper,Xiaojie Xu,Laura T. Schelhas,Vanessa L. Pool,Alireza Faghaninia,Cynthia S. Lo,Michael F. Toney,Ian D. Sharp,Joel W. Ager +9 more
TL;DR: In this paper, a room-temperature pulsed laser deposition of copper-alloyed zinc sulfide (CuxZn1-xS) thin films (0 ≤ x ≤ 0.75) is reported.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
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Organic Thin Film Transistors for Large Area Electronics
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
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Polymer‐Fullerene Bulk‐Heterojunction Solar Cells
Christoph J. Brabec,Srinivas (Jimmy) Gowrisanker,Jonathan Halls,Darin W. Laird,Shijun Jia,Shawn P. Williams +5 more
TL;DR: An outlook is presented on what will be required to drive this young photovoltaic technology towards the next major milestone, a 10% power conversion efficiency, considered by many to represent the efficiency at which OPV can be adopted in wide-spread applications.