Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
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TLDR
The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.Abstract:
Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.read more
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Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: In this article, the recent progress in n-and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p type, and the major milestones already achieved with this emerging and very promising technology are summarized.
References
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Journal ArticleDOI
Origin of Subthreshold Swing Improvement in Amorphous Indium Gallium Zinc Oxide Transistors
Jong Han Jeong,Hui Won Yang,Jin-Seong Park,Jae Kyeong Jeong,Yeon-Gon Mo,Hye-Dong Kim,Jaewon Song,Cheol Seong Hwang +7 more
TL;DR: In this article, the effect of the channel deposition pressure on the device performance of amorphous indium-gallium-zinc oxide (a-IGZO) transistors was investigated in detail.
Journal ArticleDOI
Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors
Gun Hee Kim,Gun Hee Kim,Gun Hee Kim,Byung Du Ahn,Byung Du Ahn,Hyun Soo Shin,Woong Hee Jeong,Hee Jin Kim,Hyun Jae Kim +8 more
TL;DR: In this paper, the effects of the indium content on characteristics of nanocrystalline InGaZnO (IGZO) films grown by a solgel method and their thin film transistors (TFTs) have been investigated.
Journal ArticleDOI
The preparation of copper(II) oxide thin films and the study of their microstructures and optical properties
TL;DR: In this paper, copper(II) oxide thin films were prepared by a sol-gel-like method on microscope glass substrates, and they were observed to crystallize to tenorite structure after heat treatment at 600°C for 30min.
Journal ArticleDOI
Bias dependence of instability mechanisms in amorphous silicon thin‐film transistors
TL;DR: In this article, bias dependence of the threshold voltage shift in a series of amorphous silicon-silicon nitride thin-film transistors was measured, where the composition of the nitride is varied.
Journal ArticleDOI
Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits
Hisato Yabuta,Nobuyuki Kaji,Ryo Hayashi,Hideya Kumomi,Kenji Nomura,Toshio Kamiya,Masahiro Hirano,Hideo Hosono +7 more
TL;DR: In this paper, a simple method to fabricate complimentary circuits by simultaneous selective formation of p-and n-channel TFTs was proposed, which is explained by transformation to a local SnO 2-like structure and finally to SnO2.