Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Abstract: Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.
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TL;DR: The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed in this article.
Abstract: Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap. It is usually reported that there are five different polymorphs of Ga2O3, namely, the monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), or orthorhombic (e) structures. Of these, the β-polymorph is the stable form under normal conditions and has been the most widely studied and utilized. Since melt growth techniques can be used to grow bulk crystals of β-GaO3, the cost of producing larger area, uniform substrates is potentially lower compared to the vapor growth techniques used to manufacture bulk crystals of GaN and SiC. The performance of technologically important high voltage rectifiers and enhancement-mode Metal-Oxide Field Effect Transistors benefit from the larger critical electric field of β-Ga2O3 relative to either SiC or GaN. However, the absence of clear demonstrations of p-type doping in Ga2O3, which may be a fundamental issue resulting from the band structure, makes it very difficult to simultaneously achieve low turn-on voltages and ultra-high breakdown. The purpose of this review is to summarize recent advances in the growth, processing, and device performance of the most widely studied polymorph, β-Ga2O3. The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed. Areas where continued development is needed to fully exploit the properties of Ga2O3 are identified.
1,535 citations
TL;DR: This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin- film transistors, solar cells, diodes and memories.
Abstract: Optical transparency, tunable conducting properties and easy processability make metal oxides key materials for advanced optoelectronic devices. This Review discusses recent advances in the synthesis of these materials and their use in applications. Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III–V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p–n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.
1,098 citations
TL;DR: This Review focuses on the analysis of new approaches and results in the field of solution combustion synthesis (SCS) obtained during recent years, emphasizing the chemical mechanisms that are responsible for rapid self-sustained combustion reactions.
Abstract: Solution combustion is an exciting phenomenon, which involves propagation of self-sustained exothermic reactions along an aqueous or sol–gel media. This process allows for the synthesis of a variety of nanoscale materials, including oxides, metals, alloys, and sulfides. This Review focuses on the analysis of new approaches and results in the field of solution combustion synthesis (SCS) obtained during recent years. Thermodynamics and kinetics of reactive solutions used in different chemical routes are considered, and the role of process parameters is discussed, emphasizing the chemical mechanisms that are responsible for rapid self-sustained combustion reactions. The basic principles for controlling the composition, structure, and nanostructure of SCS products, and routes to regulate the size and morphology of the nanoscale materials are also reviewed. Recently developed systems that lead to the formation of novel materials and unique structures (e.g., thin films and two-dimensional crystals) with unusual...
841 citations
TL;DR: In this review, recent progress in materials and devices for future wearable sensor technologies for bio and medical applications are reported.
Abstract: Printable electronics present a new era of wearable electronic technologies. Detailed technologies consisting of novel ink semiconductor materials, flexible substrates, and unique processing methods can be integrated to create flexible sensors. To detect various stimuli of the human body, as well as specific environments, unique electronic devices formed by "ink-based semiconductors" onto flexible and/or stretchable substrates have become a major research trend in recent years. Materials such as inorganic, organic, and hybrid semiconductors with various structures (i.e., 1D, 2D and 3D) with printing capabilities have been considered for bio and medical applications. In this review, we report recent progress in materials and devices for future wearable sensor technologies.
589 citations
TL;DR: In this article, the recent progress in n-and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p type, and the major milestones already achieved with this emerging and very promising technology are summarized.
Abstract: Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.
529 citations
References
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TL;DR: In this paper, the authors reported high performance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration.
Abstract: We report high-performance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19V, a saturation mobility of 27cm2∕Vs, a gate voltage swing of 1.39V∕decade and an on/off ratio of 3×105. The ZnO-TFT presents an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The combination of transparency, high mobility, and room-temperature processing makes the ZnO-TFT a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics.
1,499 citations
TL;DR: In this review, recent developments in the area of high-electron-mobility diimides based on rylenes and related aromatic cores, particularly perylene- and naphthalene-diimide-based small molecules and polymers, for application in high-performance organic field-effect transistors and photovoltaic cells are summarized and analyzed.
Abstract: Organic electron-transporting materials are essential for the fabrication of organic p-n junctions, photovoltaic cells, n-channel field-effect transistors, and complementary logic circuits. Rylene diimides are a robust, versatile class of polycyclic aromatic electron-transport materials with excellent thermal and oxidative stability, high electron affinities, and, in many cases, high electron mobilities; they are, therefore, promising candidates for a variety of organic electronics applications. In this review, recent developments in the area of high-electron-mobility diimides based on rylenes and related aromatic cores, particularly perylene- and naphthalene-diimide-based small molecules and polymers, for application in high-performance organic field-effect transistors and photovoltaic cells are summarized and analyzed.
1,494 citations
TL;DR: In this article, the authors proposed a transparent ZnO-based thin-film transistors (TFTs) for select-transistors in each pixel of an active-matrix liquid-crystal display.
Abstract: Highly transparent ZnO-based thin-film transistors (TFTs) are fabricated with optical transmission (including substrate) of ∼75% in the visible portion of the electromagnetic spectrum. Current–voltage measurements indicate n-channel, enhancement-mode TFT operation with excellent drain current saturation and a drain current on-to-off ratio of ∼107. Threshold voltages and channel mobilities of devices fabricated to date range from ∼10 to 20 V and ∼0.3 to 2.5 cm2/V s, respectively. Exposure to ambient light has little to no observable effect on the drain current. In contrast, exposure to intense ultraviolet radiation results in persistent photoconductivity, associated with the creation of electron-hole pairs by ultraviolet photons with energies greater than the ZnO band gap. Light sensitivity is reduced by decreasing the ZnO channel layer thickness. One attractive application for transparent TFTs involves their use as select-transistors in each pixel of an active-matrix liquid-crystal display.
1,415 citations
TL;DR: Blue phosphorescence approaching the theoretical efficiency has also been achieved, which may overcome the final obstacle against the commercialization of full color display and white light sources from phosphorescent materials.
Abstract: Although organic light-emitting devices have been commercialized as flat panel displays since 1997, only singlet excitons were emitted. Full use of singlet and triplet excitons, electrophosphorescence, has attracted increasing attentions after the premier work made by Forrest, Thompson, and co-workers. In fact, red electrophosphorescent dye has already been used in sub-display of commercial mobile phones since 2003. Highly efficient green phosphorescent dye is now undergoing of commercialization. Very recently, blue phosphorescence approaching the theoretical efficiency has also been achieved, which may overcome the final obstacle against the commercialization of full color display and white light sources from phosphorescent materials. Combining light out-coupling structures with highly efficient phosphors (shown in the table-of-contents image), white emission with an efficiency matching that of fluorescent tubes (90 lm/W) has now been realized. It is possible to tune the color to the true white region by changing to a deep blue emitter and corresponding wide gap host and transporting material for the blue phosphor. In this article, recent progresses in red, green, blue, and white electrophosphorescent materials for OLEDs are reviewed, with special emphasis on blue electrophosphorescent materials.
1,240 citations
TL;DR: In this article, a working hypothesis for exploring optically transparent and electrically conducting amorphous oxides is proposed on the basis of simple considerations concerning chemical bonding, and three new materials are presented as examples.
Abstract: A working hypothesis for exploring optically transparent and electrically conducting amorphous oxides is proposed on the basis of simple considerations concerning chemical bonding. The hypothesis predicts that amorphous oxides composed of heavy metal cations with an electronic configuration of ( n − 1)d 10 ns 0 may be converted into transparent conducting amorphous oxides when doped by Li ion implantation or heating at temperatures below crystallization. Three new materials, amorphous Cd 2 GeO 4 , AgSbO 3 and Cd 2 PbO 4 , have been prepared as examples.
1,180 citations