Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Abstract: Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.
Citations
More filters
TL;DR: The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed in this article.
Abstract: Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap. It is usually reported that there are five different polymorphs of Ga2O3, namely, the monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), or orthorhombic (e) structures. Of these, the β-polymorph is the stable form under normal conditions and has been the most widely studied and utilized. Since melt growth techniques can be used to grow bulk crystals of β-GaO3, the cost of producing larger area, uniform substrates is potentially lower compared to the vapor growth techniques used to manufacture bulk crystals of GaN and SiC. The performance of technologically important high voltage rectifiers and enhancement-mode Metal-Oxide Field Effect Transistors benefit from the larger critical electric field of β-Ga2O3 relative to either SiC or GaN. However, the absence of clear demonstrations of p-type doping in Ga2O3, which may be a fundamental issue resulting from the band structure, makes it very difficult to simultaneously achieve low turn-on voltages and ultra-high breakdown. The purpose of this review is to summarize recent advances in the growth, processing, and device performance of the most widely studied polymorph, β-Ga2O3. The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed. Areas where continued development is needed to fully exploit the properties of Ga2O3 are identified.
1,535 citations
TL;DR: This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin- film transistors, solar cells, diodes and memories.
Abstract: Optical transparency, tunable conducting properties and easy processability make metal oxides key materials for advanced optoelectronic devices. This Review discusses recent advances in the synthesis of these materials and their use in applications. Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III–V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p–n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.
1,098 citations
TL;DR: This Review focuses on the analysis of new approaches and results in the field of solution combustion synthesis (SCS) obtained during recent years, emphasizing the chemical mechanisms that are responsible for rapid self-sustained combustion reactions.
Abstract: Solution combustion is an exciting phenomenon, which involves propagation of self-sustained exothermic reactions along an aqueous or sol–gel media. This process allows for the synthesis of a variety of nanoscale materials, including oxides, metals, alloys, and sulfides. This Review focuses on the analysis of new approaches and results in the field of solution combustion synthesis (SCS) obtained during recent years. Thermodynamics and kinetics of reactive solutions used in different chemical routes are considered, and the role of process parameters is discussed, emphasizing the chemical mechanisms that are responsible for rapid self-sustained combustion reactions. The basic principles for controlling the composition, structure, and nanostructure of SCS products, and routes to regulate the size and morphology of the nanoscale materials are also reviewed. Recently developed systems that lead to the formation of novel materials and unique structures (e.g., thin films and two-dimensional crystals) with unusual...
841 citations
TL;DR: In this review, recent progress in materials and devices for future wearable sensor technologies for bio and medical applications are reported.
Abstract: Printable electronics present a new era of wearable electronic technologies. Detailed technologies consisting of novel ink semiconductor materials, flexible substrates, and unique processing methods can be integrated to create flexible sensors. To detect various stimuli of the human body, as well as specific environments, unique electronic devices formed by "ink-based semiconductors" onto flexible and/or stretchable substrates have become a major research trend in recent years. Materials such as inorganic, organic, and hybrid semiconductors with various structures (i.e., 1D, 2D and 3D) with printing capabilities have been considered for bio and medical applications. In this review, we report recent progress in materials and devices for future wearable sensor technologies.
589 citations
TL;DR: In this article, the recent progress in n-and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p type, and the major milestones already achieved with this emerging and very promising technology are summarized.
Abstract: Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.
529 citations
References
More filters
40 citations
01 Jan 2009
TL;DR: In this paper, the authors present the post-annealing effects caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor's (TFT) electrical characteristics, and its contact resistance with thermally grown SiO 2 gate dielectric on silicon wafer substrates.
Abstract: Abstract This paper presents the post-annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor's (TFT) electrical characteristics, and its contact resistance ( R C ) with thermally grown SiO 2 gate dielectric on silicon wafer substrates. The electrical characteristics of two types of TFTs, one post-annealed and the other not, are compared, and a simple model of the source and drain contacts is applied to estimate the R C by a transmission line method (TLM). Consequently, it has been found that the post-annealing does improve the TFT performances; in other words, the saturation mobility ( μ sat ), the on/off current ratio ( I ON/OFF ), and the drain current ( I D ) all increase, and the R C and the threshold voltage ( V T ) both decrease. As-fabricated TFTs have the following electrical characteristics; a saturation mobility ( μ sat ) as large as 0.027 cm 2 /V s, I ON/OFF of 10 3 , sub-threshold swing (SS) of 0.49 V/decade, V T of 32.51 V, and R C of 969 MΩ, and the annealed TFTs have improved electrical characteristics as follows; a μ sat of 3.51 cm 2 /V s, I ON/OFF of 10 5 , SS of 0.57 V/decade, V T of 27.2 V, and R C of 847 kΩ.
39 citations
TL;DR: In this article, X-ray diffraction (XRD) measurements in asymmetric mode were used to determine the precise in-plane orientations on the (0 0 1) MgO plane and the (1 1 1) CuO plane.
39 citations
TL;DR: In this article, a ZnO thin-film transistor with a channel layer formed via aqueous solution-growth at low temperature is demonstrated, which has a well-controlled crystalline form, exhibiting n-channel, enhancement-mode behavior with channel mobility as large as 0.56 cm2.
Abstract: A ZnO thin-film transistor (TFT) with a channel layer formed via aqueous solution-growth at low temperature is demonstrated. This ZnO thin-film semiconductor has a well-controlled crystalline form, exhibiting n-channel, enhancement-mode behavior with a channel mobility as large as 0.56 cm2 V−1 s−1. Low-cost, superior transistor characteristics and low-temperature processing makes ZnO TFT attractive for flexible electronics on temperature sensitive substrates.
39 citations
TL;DR: In this article, the authors present the post-annealing effects caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor's electrical characteristics, and its contact resistance with thermally grown SiO 2 gate dielectric on silicon wafer substrates.
39 citations