Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
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TLDR
The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.Abstract:
Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.read more
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Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: In this article, the recent progress in n-and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p type, and the major milestones already achieved with this emerging and very promising technology are summarized.
References
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Journal ArticleDOI
Highly Transparent and Conductive Al-Doped ZnO/Ag/Al-Doped ZnO Multilayer Source/Drain Electrodes for Transparent Oxide Thin Film Transistors
Journal ArticleDOI
Instability of an Amorphous Indium Gallium Zinc Oxide TFT under Bias and Light Illumination
TL;DR: In this paper, bias stabilities of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) under light illumination were examined.
Journal ArticleDOI
Oxide-Thin-Film-Transistor-Based Ferroelectric Memory Array
Byeong Hoon Kim,Chun Won Byun,Sung-Min Yoon,Shin Hyuk Yang,Soon-Won Jung,Min Ki Ryu,Sang-Hee Ko Park,Chi-Sun Hwang,Kyoung-Ik Cho,Oh-Sang Kwon,Eun-Suk Park,Him Chan Oh,Kyounghwan Kim,Kee-Chan Park +13 more
TL;DR: In this paper, a new ferroelectric memory array on a glass substrate has been developed using In-Ga-Zn-O (IGZO) thin-film transistors (TFTs).
Journal ArticleDOI
Localization effect of a current-path in amorphous In–Ga–Zn–O thin film transistors with a highly doped buried-layer
TL;DR: In this article, the authors investigated the role of the highly-doped buried layer in a-IGZO channel layer of thin-film transistor (TFT) and found that it plays a critical role of supplying sufficient negative charge density to compensate the amount of positive charge induced by the increasing gate voltage.
Journal ArticleDOI
Role of Room Temperature Sputtered High Conductive and High Transparent Indium Zinc Oxide Film Contacts on the Performance of Orange, Green, and Blue Organic Light Emitting Diodes
Gonçalo Gonçalves,Valentina Grasso,Pedro Barquinha,Luís Pereira,Elangovan Elamurugu,Mauro Brignone,Rodrigo Martins,Vito Lambertini,Elvira Fortunato +8 more
TL;DR: In this article, the use of an amorphous transparent conductive oxide (a-TCO), whose performance is on par with the classical indium tin oxide (ITO) films as a transparent contact in organic light emitting diodes (OLEDs), is discussed.