Journal ArticleDOI
Oxygen vacancy controlled tunable magnetic and electrical transport properties of (Li, Ni)-codoped ZnO thin films
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In this article, the electrical, magnetic, and magnetotransport properties of Li-Ni codoped ZnO thin films in the electron dominated, hole dominated, and insulating regimes were investigated.Abstract:
We investigated the electrical, magnetic, and magnetotransport properties of Li–Ni codoped ZnO thin films in the electron dominated, hole dominated, and insulating regimes. In a narrow window of oxygen growth pressure, 10−3–10−2 mbar, the films exhibited p-type conductivity with a maximum hole concentration ∼8.2×1017 cm−3. Magnetoresistance exhibited by the films is attributed to scattering of charge carriers due to localized magnetic moments. Insulating films showed superparamagnetic behavior, whereas both n-type and p-type films showed room temperature ferromagnetism. Our findings suggest that oxygen vacancies and Ni ions in cation site are jointly responsible for ferromagnetism that is not dependent on the carrier type.read more
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Book ChapterDOI
Zinc oxide: The versatile material with an assortment of physical properties
TL;DR: In this paper, the authors have presented the overall physical properties of ZnO with their important results related to the doping aspects in ZnOs oxide, and used Li and Ni co-doping to realize a low resistive, p-type and magnetic ZNO.
Journal ArticleDOI
Zn interstitial defects induced room temperature ferromagnetism in Na+ ions codoped Zn0.95Co0.05O powders
TL;DR: In this article, the structural, surface morphology and optical properties of the prepared samples were investigated by X-ray diffraction, scanning electron microscope, UV-diffuse reflectance spectroscopy (UV-DRS) and Photoluminescence (PL) spectra measurements.
Journal ArticleDOI
Dopant-induced modifications in structural and optical properties of ZnO thin films prepared by PLD
TL;DR: In this paper, the effect of yttrium doping concentration on the microstructure and optical behavior of ZnO thin films, deposited by pulsed laser deposition on silicon (001) substrates, was studied.
Journal ArticleDOI
Effect of sintering pressure on structure and magnetic properties of Zn0.99Ni0.01O bulk samples synthesized under different pressures
TL;DR: In this paper, a series of Zn 0.99 Ni 0.01 O bulk samples were prepared by a coprecipitation method, and then sintered at 600°C under various pressures from normal pressure(NP) to 3GPa.
References
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Journal ArticleDOI
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
TL;DR: Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
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Donor impurity band exchange in dilute ferromagnetic oxides.
TL;DR: It is proposed thatferromagnetic exchange here, and in dilute ferromagnetic nitrides, is mediated by shallow donor electrons that form bound magnetic polarons, which overlap to create a spin-split impurity band.
Journal ArticleDOI
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
Atsushi Tsukazaki,Akira Ohtomo,Takeyoshi Onuma,M. Ohtani,Takayuki Makino,Masatomo Sumiya,Keita Ohtani,Shigefusa F. Chichibu,S. Fuke,Yusaburou Segawa,Hideo Ohno,Hideomi Koinuma,Masashi Kawasaki +12 more
TL;DR: In this paper, the authors used a new technique to fabricate p-type ZnO reproducibly, and showed high-quality undoped films with electron mobility exceeding that in the bulk.
Journal ArticleDOI
Thin films: unexpected magnetism in a dielectric oxide.
TL;DR: It is shown that thin films of hafnium dioxide (HfO2), an insulating oxide better known as a dielectric layer for nanoscale electronic devices, can be ferromagnetic even without doping.
Journal ArticleDOI
Anisotropic ferromagnetism in substituted zinc oxide.
TL;DR: Results are interpreted in terms of a spin-split donor impurity-band model, which can account for ferromagnetism in insulating or conducting high-k oxides with concentrations of magnetic ions that lie far below the percolation threshold.