P‐76: Resistive Switching Memory Device Based on Amorphous Al‐Zn‐Sn‐O Film for Flexible Electronics Application
01 Jun 2012-Vol. 43, Iss: 1, pp 1340-1342
TL;DR: In this paper, a flexible resistive switching memory (RRAM) using Al-doped zinc tin oxide (AZTO) as resistive switch layers has been fabricated for flexible electronics application.
Abstract: We have fabricated flexible resistive switching memory (RRAM) using Al-doped zinc tin oxide (AZTO) as resistive switching layers The AZTO RRAM with robust memory window over hundreds of switching cycles Besides, a conceptual co-operation scheme was also demonstrated between AZTO RRAM and thin film transistor (TFT) for flexible electronics application
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TL;DR: This review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO and covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices.
Abstract: In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.
176 citations
Cites background from "P‐76: Resistive Switching Memory De..."
...Polyethylene terephthalate (PET) [220, 230, 231], polyethylene naphthalate (PEN) [113], polyethersulfone (PES) [232, 233], polymide (PI) [234], and Kapton [235] are commonly used as polymer substrate; however, flexible RRAM, but not transparent, having metal foil [236] and stainless steel [237]...
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TL;DR: In this article, the potentials of ZnO-based RRAM for invisible and bendable devices are discussed and various attempts to subdue the bottleneck have been shown and discussed in this article.
Abstract: Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top electrodes, controlling the deposition materials, and the impact of hybrid structure for enhancing the switching dynamics are discussed. The potentials of ZnO-based RRAM for invisible and bendable devices are also covered. ZnO-based RRAM has the potential for possible application in bio-inspired cognitive computational systems. Thus, the synapse capability of ZnO is presented. The sneak-path current issue also besets ZnO-based RRAM crossbar array architecture. Hence, various attempts to subdue the bottleneck have been shown and discussed in this article. Interestingly, ZnO provides not only helpful memory features. However, it demonstrates the ability to be used in nonvolatile multifunctional memory devices. Also, this review covers various issues like the effect of electrodes, interfacial layers, proper switching layers, appropriate fabrication techniques, and proper annealing settings. These may offer a valuable understanding of the study and development of ZnO-based RRAM and should be an avenue for overcoming RRAM challenges.
9 citations
References
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TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Abstract: Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.
7,301 citations
"P‐76: Resistive Switching Memory De..." refers background in this paper
...However, the flexible electronic suffer from crack problem during bending test, to solve this problem, the transparent amorphous oxide semiconductor (TAOS) such as indium-gallium-zinc oxide (IGZO) offer some advantage, including better flexibility, higher uniformity, and usually lower process temperature and become a very popular materials in the world [3]....
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4,540 citations
TL;DR: In this paper, the filamentary resistance switching mechanism of a Pt∕40nm TiO2∕Pt capacitor structure in voltage sweep mode was investigated and it was unambiguously found that the conducting filaments propagate from the cathode interface and that the resistance switching is induced by the rupture and recovery of the filaments in the localized region (3-10nm thick) near the anode.
Abstract: The filamentary resistance switching mechanism of a Pt∕40nm TiO2∕Pt capacitor structure in voltage sweep mode was investigated. It was unambiguously found that the conducting filaments propagate from the cathode interface and that the resistance switching is induced by the rupture and recovery of the filaments in the localized region (3–10nm thick) near the anode. The electrical conduction behavior in the high resistance state was well explained by the space charge limited current (SCLC) mechanism that occurs in the filament-free region. The various parameters extracted from the SCLC fitting supported the localized rupture and formation of filaments near the anode.
424 citations
"P‐76: Resistive Switching Memory De..." refers background in this paper
...The linearity slope changes from 1.14 to 2.06 while the transition from HRS to LRS occurs, and suggests that the dominant current transport is of the space charge limited current (SCLC) [6]....
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...06 while the transition from HRS to LRS occurs, and suggests that the dominant current transport is of the space charge limited current (SCLC) [6]....
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TL;DR: In this paper, a transparent bottom gate thin film transistors (TFTs) using Al-doped zinc tin oxide (AZTO) as active layers were fabricated and the AZTO active layer was deposited by rf magnetron sputtering at room temperature.
Abstract: We have fabricated transparent bottom gate thin film transistors (TFTs) using Al-doped zinc tin oxide (AZTO) as active layers. The AZTO active layer was deposited by rf magnetron sputtering at room temperature. The AZTO TFT showed good TFT performance without postannealing. The field effect mobility and the subthreshold swing were improved by postannealing below 180 °C. The AZTO TFT exhibited a field effect mobility (μFET) of 10.1 cm2/V s, a turn-on voltage (Von) of 0.4 V, a subthreshold swing (S/S) of 0.6 V/decade, and an on/off ratio (Ion/Ioff) of 109.
133 citations
Additional excerpts
...Transparent amorphous oxides semiconductors have also been widely investigated in the fields of thin-film transistors [7], as the result, The use of AZTO film as a nonvolatile memory channel will be easily integrated with the emerging AZTO TFT array technology in AMLCDs and AMOLEDs....
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TL;DR: This new RRAM device sets a new standard for NVM performance on low-cost fl exible substrates with excellent 10 5 cycling endurance and good retention and is the lowest reported switching power NVM on plastic.
Abstract: Plastic-substrate-based electronic devices are attractive because of their inherit merits of low cost, light weight, environmentally friendly low temperature processing, and the application in fl exible displays and integrated circuits (ICs). Fast progress of logic ICs using thin-fi lm transistors (TFT) on plastic has been demonstrated. However, one fundamental challenge for plastic electronics is the lack of good performance non-volatile memory (NVM) devices. [ 1–5 ] This is due to the degraded dielectric quality of charge-based fl ash (CTF) memory from the limited low temperature process. [ 2 ] Alternatively, the resistive random access memory (RRAM) [ 6–21 ] shows promising NVM performance on plastic even when processed at low temperature, but the large set and reset currents are the basic limitation for high-density and low-power operation. In addition, the large switching energies degrade the endurance due to excessive stress. In this paper, record high-performance NVM has been demonstrated on low cost polyimide substrate. A very low set current of 1.6 μ A at 3 V (4.8 μ W) and reset current of −0.5 nA at −2 V (1 nW) were needed to reach the bistable resistance state, which led to a large memory window with a highto low-resistance state ratio (HRS/LRS) of 9 × 10 2 . Additionally, good retention was obtained with a small HRS/LRS decay from the initial 9 × 10 2 to 7 × 10 2 at 85 ° C for 10 4 s. Furthermore, excellent endurance of 10 5 cycles was measured at a very fast 50 ns switching time. This is the lowest reported switching power NVM on plastic with excellent 10 5 cycling endurance and good retention. The excellent NVM performance on fl exible plastic is due to the using novel ultra-low power hopping conduction mechanism [ 22 ] rather than the conductive fi lament in conventional RRAM. [ 17 , 18 ] This new RRAM device sets a new standard for NVM performance on low-cost fl exible substrates.
133 citations
"P‐76: Resistive Switching Memory De..." refers background in this paper
...On the other hand, flexible electronic devices owing to their merits of low cost, light weight, low temperature processing, which create the new applications on electronics [2]....
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