Proceedings ArticleDOI
Partitioning Scheme in Lateral Asymmetric MOST
A. S. Roy,Yogesh Singh Chauhan,Jean-Michel Sallese,Christian Enz,Adrian M. Ionescu,Michel Declercq +5 more
- pp 307-310
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TLDR
In this paper, the existence of a charge partitioning scheme for small-signal operation of the lateral asymmetric MOSFET was shown. And the proposed theory is validated by extensive numerical and device simulation.Abstract:
Lateral Asymmetric MOSFET, which has longitudinal doping variation in the channel, is the core of High Voltage MOSFET. Recently it has been recognized that capacitance property of this kind of device is fundamentally different from conventional MOST because Ward-Dutton (WD) charge partitioning is not applicable to this kind of devices [1], [2]. In this work we show the existence of a partitioning scheme for small-signal operation of the device. We will also provide physical explanations of unusual behavior of Cdg in lateral asymmetric MOST. The proposed theory is validated by extensive numerical and device simulation.read more
Citations
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Journal ArticleDOI
Compact Modeling of Lateral Nonuniform Doping in High-Voltage MOSFETs
Yogesh Singh Chauhan,Francois Krummenacher,Renaud Gillon,Benoit Bakeroot,Michel Declercq,Adrian M. Ionescu +5 more
TL;DR: In this article, a detailed analysis and modeling of lateral nonuniform doping present in intrinsic MOS channel of highvoltage (HV) MOSFETs, e.g., vertical (VDMOS) and lateral diffused MOS (LDMOS), is presented.
Journal ArticleDOI
An EKV-based high voltage MOSFET model with improved mobility and drift model
Yogesh Singh Chauhan,Renaud Gillon,Benoit Bakeroot,Francois Krummenacher,Michel Declercq,Adrian M. Ionescu +5 more
TL;DR: In this paper, Chauhan et al. presented an EKV-based high voltage MOSFET model based on the charge-based EkV-formalism and an improved mobility model is used for the modeling of the intrinsic channel to improve the DC characteristics.
Journal ArticleDOI
Source–Drain Partitioning in MOSFET
TL;DR: In this paper, a generalization of the Ward-Dutton (WD) partitioning concept is presented for capacitance evaluation of lateral asymmetric MOSFETs, which can account for any arbitrary field-dependent mobility.
Compact modeling of high voltage MOSFETs
TL;DR: In this paper, a general high voltage MOSFET model is presented for the first time, which can be used for any high voltage device with extended drift region and a novel partitioning scheme is developed and validated on the device simulation.
Journal ArticleDOI
Physics, Technology, and Modeling of Complementary Asymmetric MOSFETs
Constantin Bulucea,Sandeep R. Bahl,William French,Jeng-Jiun Yang,Pascale Francis,Tikno Harjono,Vijay Krishnamurthy,Jon Tao,Courtney Parker +8 more
TL;DR: In this paper, the physics, technology, and modeling of complementary asymmetric MOSFETs are reviewed and illustrated with statistically representative silicon data from a recent manufacturing implementation, in which the transistors for the secondary power supply voltage are offered in asymmetric and symmetric constructions.
References
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Journal ArticleDOI
Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model
TL;DR: In this article, the implications of inversion charge linearization in compact MOS transistor modeling are discussed, and an improvement to the EKV charge-based model is proposed in the form of a more accurate charge-voltage relationship.
Journal ArticleDOI
Transient analysis of MOS transistors
TL;DR: In this paper, two methods have been developed for analyzing MOS transients: analytical and quasi-static approximation, and numerical and a new boundary value method which can be applied over a wide range of operating speeds.
Journal ArticleDOI
New fundamental insights into capacitance modeling of laterally nonuniform MOS devices
TL;DR: In this article, a capacitance model for MOSFETs with a laterally diffused channel doping profile is presented, and a method is given to incorporate this model into circuit simulators, which are traditionally based on terminal charge models.
Proceedings ArticleDOI
Capacitance modeling of laterally non-uniform MOS devices
TL;DR: In this article, a model for the capacitances of MOS transistor with a laterally diffused channel doping profile is presented, and a method is given to incorporate such a capacitance model in circuit simulators which are traditionally based on terminal charge models.
Journal ArticleDOI
Modeling the partition of noise from the gate-tunneling current in MOSFETs
TL;DR: In this article, the spectral densities of the gate/source and gate/drain noise currents caused by current flow through the gate oxide of MOSFETs are derived, and simple analytic expressions for these equivalent noise currents and their correlation are obtained in terms of the total gate current and the drain/source partition ratio.