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Journal ArticleDOI

Pattern generation on silicon surfaces and yba2cu3ox thin films by a scanning tunneling microscope

01 Jul 1995-Journal of Applied Physics (American Institute of Physics)-Vol. 78, Iss: 1, pp 127-131
TL;DR: In this paper, the authors employed scanning tunneling microscopy-based techniques for the generation of nanometer-scale patterns on hydrofluoric acid treated silicon(100) and YBa2Cu3Ox superconducting thin films.
Abstract: In this article, recent results employing scanning tunneling microscopy‐based techniques for the generation of nanometer‐scale patterns on hydrofluoric acid treated silicon(100) and YBa2Cu3Ox superconducting thin films are presented. Furthermore, we were able to extract silicon (Si) atoms from Si(100)−1×1 surfaces, thereby producing silicon vacancies in the surface. These results thus demonstrate a possible approach for the construction of an atomic scale data memory as well as fabrication of artificial nucleation sites. The emission mechanism is believed to be field assisted evaporation due to the close proximity of the surface and the probe of the microscope.
Citations
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Journal ArticleDOI
TL;DR: In this article, a scanning tunneling microscope has been used to modify the surface of YBa2Cu3O7−x (YBCO) high Tc superconducting thin films by operating the instrument in the so-called mechanical milling or field-induced evaporation mode.
Abstract: The scanning tunneling microscope has been used to modify the surface of YBa2Cu3O7−x (YBCO) high Tc superconducting thin films by operating the instrument in the so-called mechanical milling or field-induced evaporation mode. Nanostructures such as holes, lines, and trenches were fabricated on the YBCO thin film surface in a controlled manner. In the surface modification and nanostructure fabrication processes, the effect of bias voltage, tunneling current, and scanning feedback control parameters on the modification efficiency have been investigated.

9 citations

Journal ArticleDOI
TL;DR: In this article, it was shown that the materials on the surfaces of NdBa2Cu3Oy (Nd123) thin films can be removed gradually using an STM tip milling technique.
Abstract: Various nanostructures of both convex and concave shapes have been successfully fabricated on newly discovered stable surfaces of NdBa2Cu3Oy (Nd123) single crystals and thin films by means of the tip of an ultrahigh-vacuum scanning tunnelling microscope (STM) at room temperature. It is also demonstrated that the materials on the surfaces of Nd123 thin films can be removed gradually using an STM tip milling technique. Possible mechanisms responsible for the fabrication processes are discussed. From these preliminary results, we suggest that many other microscopic or macroscopic modification and patterning processes may be performed on the as-prepared surfaces of Nd123 high-temperature superconductors using scanning probe microscopes.
Book ChapterDOI
01 Jan 1998
TL;DR: In this paper, the optimum conditions required to obtain a stable image and reliable morphological information for YBa2Cu3O7-x (YBCO) high Tc superconducting thin films are summarised.
Abstract: The optimum conditions required to obtain a stable image and reliable morphological information for YBa2Cu3O7-x (YBCO) high Tc superconducting thin films are summarised. Some typical morphological images of YBCO thin films prepared by the conventional laser ablation technique are presented. By analysing the STM images, three growth modes i.e. spiral growth, layer-by-layer growth and step propagation growth have been identified. Scanning tunneling spectroscopy has been used to study the local area tunneling behaviour for different regions of the YBCO thin films. Distinct and representative I-V curves for spiral growth crystal grains, particulates and non-spiral growth islands have been obtained. Some initial experiments show nanometre scale modification and structure fabrication on the YBCO thin film surface obtained by scanning the tip.
Journal ArticleDOI
TL;DR: In this article, the authors reported their preliminary results of nanostructure fabrication of pyramids and convex lines through patterning on the surfaces of Nd123 single crystals using an ultrahigh vacuum scanning tunnelling microscope system.
References
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Journal ArticleDOI
TL;DR: In this paper, surface microscopy using vacuum tunneling has been demonstrated for the first time, and topographic pictures of surfaces on an atomic scale have been obtained for CaIrSn 4 and Au.
Abstract: Surface microscopy using vacuum tunneling is demonstrated for the first time. Topographic pictures of surfaces on an atomic scale have been obtained. Examples of resolved monoatomic steps and surface reconstructions are shown for (110) surfaces of CaIrSn 4 and Au.

4,290 citations

Journal ArticleDOI
D. M. Eigler1, E. K. Schweizer1
01 Apr 1990-Nature
TL;DR: In this paper, Binnig and Rohrer used the scanning tunnelling microscope (STM) to position individual xenon atoms on a single-crystal nickel surface with atomic pre-cision.
Abstract: SINCE its invention in the early 1980s by Binnig and Rohrer1,2, the scanning tunnelling microscope (STM) has provided images of surfaces and adsorbed atoms and molecules with unprecedented resolution The STM has also been used to modify surfaces, for example by locally pinning molecules to a surface3 and by transfer of an atom from the STM tip to the surface4 Here we report the use of the STM at low temperatures (4 K) to position individual xenon atoms on a single-crystal nickel surface with atomic pre-cision This capacity has allowed us to fabricate rudimentary structures of our own design, atom by atom The processes we describe are in principle applicable to molecules also In view of the device-like characteristics reported for single atoms on surfaces5,6, the possibilities for perhaps the ultimate in device miniaturization are evident

2,765 citations

Journal ArticleDOI
TL;DR: In this paper, the chemical modification of hydrogen-passivated n-Si surfaces by a scanning tunneling microscope (STM) operating in air is reported, and the modified surface regions have been characterized by STM spectroscopy, scanning electron microscopy (SEM), time-of-flight secondary ion mass spectrometry (TOF SIMS), and chemical etch/Nomarski microscopy.
Abstract: The chemical modification of hydrogen‐passivated n‐Si (111) surfaces by a scanning tunneling microscope (STM) operating in air is reported. The modified surface regions have been characterized by STM spectroscopy, scanning electron microscopy (SEM), time‐of‐flight secondary‐ion mass spectrometry (TOF SIMS), and chemical etch/Nomarski microscopy. Comparison of STM images with SEM, TOF SIMS, and optical information indicates that the STM contrast mechanism of these features arises entirely from electronic structure effects rather than from topographical differences between the modified and unmodified substrate. No surface modification was observed in a nitrogen ambient. Direct writing of features with 100 nm resolution was demonstrated. The permanence of these features was verified by SEM imaging after three months storage in air. The results suggest that field‐enhanced oxidation/diffusion occurs at the tip‐substrate interface in the presence of oxygen.

723 citations

Journal ArticleDOI
TL;DR: In this paper, the clean surface of a silicon single crystal was prepared with ultraviolet cleaning followed by HF dipping with low concentration HF obtained by dilution by organic free ultrapure water, at room temperature under the atmospheric condition.
Abstract: We have tried to develop a new procedure to prepare the clean surface of a silicon single crystal. We successfully prepared the contamination free bare silicon surface with ultraviolet cleaning followed by HF dipping with low concentration HF obtained by dilution by organic free ultrapure water, at room temperature under the atmospheric condition. X‐ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and ultraviolet photoelectron spectroscopy measurements proved thus prepared surface has a hydrogen monoatomic layer terminating the dangling bonds of silicon. The hydrogen termination was found to have remarkable passivation effect against surface oxidation reaction. A silicon thin‐film epitaxially grown on the prepared surface was confirmed to have perfect crystal structure and high‐purity level by scanning electron microscopy, reflection high‐energy electron diffraction, Raman spectroscopy and secondary ion mass spectroscopy.

451 citations

Journal ArticleDOI
TL;DR: In this article, the chemical structure of the SiO2/Si interface and its relationship to both MOS device processing chemistry and, ultimately, the resultant electrical device properties were investigated.

365 citations