Pentacene Organic Field Effect Transistors on Flexible substrates with polymer dielectrics
23 Apr 2007-pp 1-2
TL;DR: In this article, Pentacene organic field effect transistors are fabricated using polymethyl methacrylate (PMMA) as a gate dielectric on flexible polymeric substrates like the indium tin oxide coated polyethylene terephthalate (ITO coated PET), and polymethylene napthalate (PEN) in top contact configuration.
Abstract: Pentacene organic field effect transistors are fabricated using polymethyl methacrylate (PMMA) as a gate dielectric on flexible polymeric substrates like the indium tin oxide coated polyethylene terephthalate (ITO coated PET), and polyethylene napthalate (PEN) in top contact configuration. The ITO and aluminium (evaporated on PEN) act as the gate materials for the OFETs. The devices on ITO coated PET show electron mobility up to 0.07 cm2/V-s and the on/off ratios in the order of 103.
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TL;DR: In this paper, a bilayer polymethylmethacrylate (PMMA)/ZrO2 dielectric was used for field effect transistors (OFETs) to achieve high mobility and low threshold voltage.
Abstract: This paper reports on the application of a bilayer polymethylmethacrylate (PMMA)/ZrO2 dielectric in copper ph-thalocyanine (CuPc) organic field-effect transistors (OFETs). By depositing a PMMA layer on ZrO2, the leakage of the dielectric is reduced by one order of magnitude compared to single- layer ZrO2. A high-quality interface is obtained between the organic semiconductor and the combined insulators. By integrating the advantages of polymer and high-fe dielectrics, the device achieves both high mobility and low threshold voltage. The typical field-effect mobility, threshold voltage, on/off current ratio, and subthreshold slope of OFETs with bilayer dielectric are 5.6 times 10-2 cm2/V ldr s, 0.8 V, 1.2 times 103, and 2.1 V/dec, respectively. By using the bilayer dielectrics, the hysteresis observed in the devices with single-layer ZrO2 is no longer present.
28 citations
Cites background from "Pentacene Organic Field Effect Tran..."
...Polymer dielectric materials, including polyvinylphenol (PVP), polyvinyl alcohol, polymethacrylate, polyimide, polycarbonate, polynorborene, poly(a-methylstyrene), parylene, benzocyclobutene, and polymethylmethacrylate (PMMA), have been proposed as gate dielectrics for organic electronics [ 19 ]‐[24]....
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TL;DR: In this article, the structural variation between top and bottom contact organic TFTs is examined and analytical models concerning to empirical parameters are discussed for forecasting the performance of organic transistor before a real realization.
17 citations
24 Jun 2012
TL;DR: In this paper, the authors investigate the dielectric properties of PMMA: TiO 2 nanocomposite thin films and show that high porosity is obtained when the amount of TiO2 2 concentration is increased.
Abstract: This research is to investigate the dielectric properties of PMMA: TiO 2 nanocomposite thin films. The experiments are conducted by varying the TiO 2 concentration from 0wt%, 1wt%, 2wt%, 3wt%. The results indicate that dielectric properties of PMMA: TiO 2 nanocomposite thin film is affected by the amount of TiO 2 concentration added into PMMA solution. The thin film with 3wt% indicate the higher dielectric constant with value 8.04 compare to others concentration. The capacitance result shows that when TiO 2 are added its capacitance value is above pure PMMA where pure PMMA is about 0.004nF. However, for dielectric loss, it shows that the 3wt% thin film with value of 0.06 is lower than other concentrations. The FESEM images show that all the nanocomposite thin films have a porous surface. High porosity is obtained when the amount TiO 2 concentration is increased.
9 citations
Cites background from "Pentacene Organic Field Effect Tran..."
...In order to realize low cost and large area electronics with organic and polymeric materials, the silicon (gate/substrate) and SiO2 (gate dielectric) need to be substituted with a polymeric substrate and organic dielectric material respectively [2]....
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TL;DR: The paper-based field effect transistors (PFETs) have been used extensively in biomedical and other analytical applications, such as bio-sensing and signal amplification as mentioned in this paper.
8 citations
TL;DR: In this article, the dielectric properties of multilayer PVDF-TrFE/PMMA:TiO2 thin film were investigated using impedance spectroscopic analysis.
Abstract: This paper reports on the dielectric properties of multilayer PVDF-TrFE/PMMA:TiO2 thin film. Two samples were fabricated on ITO substrates; one with PVDF-TrFE only and another PMMA:TiO2 on PVDF-TrFE on (PVDF-TrFE/PMMA:TiO2). Both samples were produced by spin coating method. Dielectric properties were characterized using impedance spectroscopic. Dielectric constant, k, capacitance and dielectric loss, tan δ values of PMMA:TiO2/PVDF-TrFE were measured in the frequency range 0 – 50 kHz. The result for dielectric loss did not show any significant different between the samples with and without nanocomposite PVDF-TrFE layer. However, the dielectric constant are affected when depositing a nanocomposite PVDF-TrFE layer on PMMA:TiO2. The dielectric constant is decreased by 0.3 from 7.9 to 7.6.
7 citations
Cites methods from "Pentacene Organic Field Effect Tran..."
...The k value for sample B obtained is high as compared with reported values (k is 3 for pure PMMA at frequency of 1 kHz) [11-13] and it is acceptable for both materials to be used as a Glass ITO PVDF-TrFE PMMA:TiO2 (a) (b)...
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References
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TL;DR: It is shown that such an approach can realize much larger scales of integration (in the present case, up to 864 transistors per circuit) and operation speeds of ∼1 kHz in clocked sequential complementary circuits.
Abstract: Thin-film transistors based on molecular and polymeric organic materials have been proposed for a number of applications, such as displays and radio-frequency identification tags. The main factors motivating investigations of organic transistors are their lower cost and simpler packaging, relative to conventional inorganic electronics, and their compatibility with flexible substrates. In most digital circuitry, minimal power dissipation and stability of performance against transistor parameter variations are crucial. In silicon-based microelectronics, these are achieved through the use of complementary logic-which incorporates both p- and n-type transistors-and it is therefore reasonable to suppose that adoption of such an approach with organic semiconductors will similarly result in reduced power dissipation, improved noise margins and greater operational stability. Complementary inverters and ring oscillators have already been reported. Here we show that such an approach can realize much larger scales of integration (in the present case, up to 864 transistors per circuit) and operation speeds of approximately 1 kHz in clocked sequential complementary circuits.
1,291 citations
TL;DR: In this paper, a Pentacene-based thin-film integrated circuit with polymeric shadow masks and powered by near-field coupling at radio frequencies of 125 kHz and above 6 MHz has been demonstrated.
Abstract: Pentacene-based thin-film integrated circuits patterned only with polymeric shadow masks and powered by near-field coupling at radio frequencies of 125 kHz and above 6 MHz have been demonstrated. Sufficient amplitude modulation of the rf field was obtained to externally detect a clock signal generated by the integrated circuit. The circuits operate without the use of a diode rectification stage. This demonstration provides the basis for more sophisticated low-cost rf transponder circuitry using organic semiconductors.
753 citations
Abstract: We show novel and selective means to modify the dielectric surfaces in organic TFTs. Modification schemes include alkylphosphonic acid monolayers that have a strong affinity for alumina surfaces. Monolayers form robust, extremely uniform thin films and are deposited through simple spin-coating with a dilute solution of the monolayer precursor in solvent. Adding monolayers to organic TFTs has resulted in polycrystalline devices with mobilities nearly equal to single-crystal values while maintaining acceptable values of other device parameters (for example, the threshold voltage, on/off ratio, and subthreshold slope) required for fully functional integrated circuits.
387 citations
TL;DR: The first organic complementary circuits on flexible substrates were reported in this article using pentacene and hexadecafluorocopperphthalocyanine (F/sub 16/CuPc) semiconductors.
Abstract: We report the first organic complementary circuits on flexible substrates. Organic thin-film transistors were fabricated using pentacene as the semiconductor for the p-channel devices and hexadecafluorocopperphthalocyanine (F/sub 16/CuPc) as the semiconductor for the n-channel devices. Both semiconductors were purchased from commercial sources and deposited by evaporation in vacuum. The pentacene layer was photolithographically patterned to simplify the circuit layout and reduce the circuit area. The transistors and circuits were manufactured on thin, transparent sheets of polyethylene naphthalate. Evaporated metals were used to define all contacts and interconnects, and a 50-nm-thick layer of solution-processed polyvinylphenol was used as the gate dielectric. Transistors and circuits operate at supply voltages as low as 8 V, and ring oscillators have a signal propagation delay as low as 8 /spl mu/s per stage. To our knowledge, these are the fastest organic complementary circuits reported to date.
167 citations
TL;DR: In this paper, the authors used polymethyl methacrylate as a gate dielectric to obtain pentacene thin-film transistors with field effect mobilities of 0.01 cm2 V−1 s−1 and low threshold voltages (−15 V.
133 citations