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Performance analysis of carbon nanotube interconnects for VLSI applications

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TLDR
It is shown that CNT bundles can outperform copper for long intermediate and global interconnects, and can be engineered to compete with copper for local level interConnects.
Abstract
The work in this paper analyses the applicability of carbon nanotube (CNT) bundles as interconnects for VLSI circuits, while taking into account the practical limitations in this technology. A model is developed to calculate equivalent circuit parameters for a CNT-bundle interconnect based on interconnect geometry. Using this model, the performance of CNT-bundle interconnects (at local, intermediate and global levels) is compared to copper wires of the future. It is shown that CNT bundles can outperform copper for long intermediate and global interconnects, and can be engineered to compete with copper for local level interconnects. The technological requirements necessary to make CNT bundles viable as future interconnects are also laid out.

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Citations
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Journal ArticleDOI

Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status, and Prospects

TL;DR: In this paper, the state-of-the-art of carbon-based nanomaterials, particularly the one-dimensional (1-D) forms, carbon nanotubes (CNTs) and graphene nanoribbons (GNRs), are reviewed.
Journal ArticleDOI

Circuit Modeling and Performance Analysis of Multi-Walled Carbon Nanotube Interconnects

TL;DR: In this paper, a detailed investigation of MWCNT-based interconnect performance is presented, for the first time, and a compact equivalent circuit model is presented for evaluating and compared with traditional Cu interconnects, as well as Single-Walled CNT (SWCNT) based interconnect, at different interconnect levels.
Book

On-Chip Communication Architectures: System on Chip Interconnect

TL;DR: This book is a comprehensive reference on concepts, research and trends in on-chip communication architecture design, and will provide readers with a comprehensive survey, not available elsewhere, of all current standards for on- chip communication architectures.
Journal ArticleDOI

On the Applicability of Single-Walled Carbon Nanotubes as VLSI Interconnects

TL;DR: In this article, the applicability of single-walled carbon nanotubes (SWCNTs) as interconnects in nanoscale integrated circuits has been investigated and a detailed analysis of SWCNT interconnect resistance is presented.
Journal ArticleDOI

Evaluating the impact of resistance in carbon nanotube bundles for VLSI interconnect using diameter-dependent modeling techniques

TL;DR: In this article, the impact of nanotube diameter on contact and ohmic resistance has been modeled for single-walled carbon nanotubes (SWCNT) bundles, and it is shown that SWCNT bundles can provide up to one order of magnitude reduction in resistance when compared with traditional copper interconnects depending on bundle geometry and individual diameter.
References
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Book

Electronic transport in mesoscopic systems

TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
Journal ArticleDOI

Crystalline Ropes of Metallic Carbon Nanotubes

TL;DR: X-ray diffraction and electron microscopy showed that fullerene single-wall nanotubes (SWNTs) are nearly uniform in diameter and that they self-organize into “ropes,” which consist of 100 to 500 SWNTs in a two-dimensional triangular lattice with a lattice constant of 17 angstroms.
Journal ArticleDOI

Unusually High Thermal Conductivity of Carbon Nanotubes

TL;DR: An unusually high value, lambda approximately 6600 W/m K, is suggested for an isolated (10,10) nanotube at room temperature, comparable to the thermal conductivity of a hypothetical isolated graphene monolayer or diamond.
Journal ArticleDOI

High-field electrical transport in single-wall carbon nanotubes

TL;DR: The intrinsic high-field transport properties of metallic single-wall carbon nanotubes are measured using low-resistance electrical contacts and it is shown that the current-voltage characteristics can be explained by considering optical or zone-boundary phonon emission as the dominant scattering mechanism at high field.
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