Performance evaluation of finFET based SRAM under statistical VT variability
Citations
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Cites background from "Performance evaluation of finFET ba..."
...This can have serious implications on advanced circuit design, as discussed in [21]....
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Cites background from "Performance evaluation of finFET ba..."
...up to 40% in 7nm technology node [1])....
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References
705 citations
"Performance evaluation of finFET ba..." refers methods in this paper
...ri-gate (TG) FinFET has been deployed as the first winning successor of the conventional planar transistor for the sub 22 nm technology node due to its superior electrostatics and subthreshold leakage control [1-3]....
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284 citations
"Performance evaluation of finFET ba..." refers methods in this paper
...ri-gate (TG) FinFET has been deployed as the first winning successor of the conventional planar transistor for the sub 22 nm technology node due to its superior electrostatics and subthreshold leakage control [1-3]....
[...]
177 citations
"Performance evaluation of finFET ba..." refers methods in this paper
...ri-gate (TG) FinFET has been deployed as the first winning successor of the conventional planar transistor for the sub 22 nm technology node due to its superior electrostatics and subthreshold leakage control [1-3]....
[...]
35 citations
"Performance evaluation of finFET ba..." refers background in this paper
...In addition to new design issues such as width quantization which limits the design optimization [6]....
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33 citations
"Performance evaluation of finFET ba..." refers background or methods in this paper
...However, having new geometry parameters such as the fin thickness, the quantized number of fins, and even surface orientation opens the way for new design optimization techniques [7]....
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...In [7], the FinFET SRAM design space is discussed, under different fin thicknesses and fin heights, to optimize stability, delays and leakage current but at constant channel length....
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