Journal ArticleDOI
Photoluminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy
Reads0
Chats0
TLDR
The photoluminescence properties of molecular beam epitaxially (MBE) grown ZnSe films have been studied in this paper, where it was found that the critical film thickness above which the photolUMinescence spectra show similar features is 0.8 µm.Abstract:
The photoluminescence properties of molecular beam epitaxially (MBE) grown ZnSe films have been studied. It was found that the critical film thickness above which the photoluminescence spectra show similar features is 0.8 µm. The photoluminescence spectra of MBE ZnSe at room temperature show dominant band-to-band emission and much weaker self-activated emission. No edge emission was observed at low temperature. The intensity of the I1 lines due to bound excitons at neutral acceptors is very weak. It is concluded that MBE ZnSe is of high-purity and contains lower concentration of the Zn-vacancy.read more
Citations
More filters
Journal ArticleDOI
Optical Properties of ZnSe Epilayers and Films
TL;DR: Caracterisation optique et physique de ZnSe et al. as mentioned in this paper describe des macles et des deformations thermoelastiques d'une couche ZNSe sur un substrat.
Journal ArticleDOI
Growth and doping of ZnSe and ZnSxSe1-x by organometallic chemical vapor deposition
TL;DR: In this article, the merits of the OM-CVD process and compares the results obtained so far with those on ZnSe crystals or epitaxial layers prepared by other methods are discussed.
Journal ArticleDOI
The effect of lattice deformation on optical properties and lattice parameters of ZnSe grown on (100)GaAs
TL;DR: In this article, the effect of lattice deformation on optical properties and lattice parameters of ZnSe thin films, whose thickness ranges from 0.05 to 22 μm, grown by either atomic layer epitaxy or molecular beam epitaxy on (100)GaAs substrates, has been investigated.
Journal ArticleDOI
Characterization of ZnSe grown by molecular-beam epitaxy
TL;DR: In this paper, extensive characterizations of nominally undoped, Ga-doped, and P-Doped ZnSe grown on (001)GaAs substrate have been made, and the free exciton emission line split into two lines due to the residual strain.
Journal ArticleDOI
High‐quality ZnSe thin films grown by molecular beam epitaxy
TL;DR: In this paper, the MBE ZnSe showed the largest peak intensity ratio of the near-band edge emission to the deep center luminescence even at room temperature compared with other epitaxial techniques.