Photonic crystal nanobeam lasers
TL;DR: In this paper, a large spontaneous emission factor (β∼0.97) was reported by fitting the L-L curve with the rate equations, based on high Q/V nanobeam cavities.
Abstract: Photonic crystal lasers operating at room temperature based on high Q/V nanobeam cavities have been demonstrated. We reported a large spontaneous emission factor (β∼0.97) by fitting the L-L curve with the rate equations.
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TL;DR: In this paper, a topological PhC nanocavity with a near-diffraction-limited mode volume and its application to single-mode lasing was reported, and the observed lasing accompanied a high spontaneous emission coupling factor stemming from the nanoscale confinement.
Abstract: Topological edge states exist at the interfaces between two topologically distinct materials. The presence and number of such modes are deterministically predicted from the bulk band topologies, known as the bulk-edge correspondence. This principle is highly useful for predictably controlling optical modes in resonators made of photonic crystals (PhCs), leading to the recent demonstrations of microscale topological lasers. Meanwhile, zero-dimensional topological trapped states in the nanoscale remained unexplored, despite its importance for enhancing light–matter interactions and for wide applications including single-mode nanolasers. Here, we report a topological PhC nanocavity with a near-diffraction-limited mode volume and its application to single-mode lasing. The topological origin of the nanocavity, formed at the interface between two topologically distinct PhCs, guarantees the existence of only one mode within its photonic bandgap. The observed lasing accompanies a high spontaneous emission coupling factor stemming from the nanoscale confinement. These results encompass a way to greatly downscale topological photonics. For most lasing and photonic applications, it is essential to control the number of lasing modes that are present. In this work, an interface between two topologically distinct photonic crystals is used to ensure single-mode lasing with enhanced light-matter interactions due to a near-diffraction-limited mode volume.
146 citations
TL;DR: In this paper, the authors acknowledge the support from the BrainBridge project ZJU-TU/e and Philips Research collaboration, and the National Natural Science Foundation of China Grant No. 60907018.
Abstract: The authors acknowledge the support from the BrainBridge
project ZJU-TU/e and Philips Research collaboration,
AOARD, and the National Natural Science Foundation of
China Grant No. 60907018.
127 citations
TL;DR: The lasing behavior of one dimensional GaAs nanobeam cavities with embedded InAs quantum dots is studied at room temperature, and the wavelength dependence of the threshold is calculated.
Abstract: The lasing behavior of one dimensional GaAs nanobeam cavities with embedded InAs quantum dots is studied at room temperature. Lasing is observed throughout the quantum dot PL spectrum, and the wavelength dependence of the threshold is calculated. We study the cavity lasers under both 780 nm and 980 nm pump, finding thresholds as low as 0.3 μW and 19 μW for the two pump wavelengths, respectively. Finally, the nanobeam cavity laser wavelengths are tuned by up to 7 nm by employing a fiber taper in near proximity to the cavities. The fiber taper is used both to efficiently pump the cavity and collect the cavity emission.
117 citations
Cites background from "Photonic crystal nanobeam lasers"
...Very recently, lasing in such cavities incorporating multi-quantum well material has been demonstrated [15]....
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TL;DR: In this paper, the authors demonstrated the strong coupling between a one-dimensional photonic crystal nanobeam cavity and a single quantum dot (QD) and obtained an anticrossing behavior with a vacuum Rabi splitting of 226μeV, which is the highest value among any QD-based cavity quantum electrodynamics systems reported so far.
Abstract: We demonstrated the strong coupling between a one-dimensional photonic crystal nanobeam cavity and a single quantum dot (QD). Thanks to a high quality factor (∼25 000) with small mode volume [0.38×(n/λ)3] of the nanobeam cavity, an anticrossing behavior with a vacuum Rabi splitting of 226 μeV was observed. The ratio of the QD-cavity coupling strength to the cavity decay rate, which is a figure of merit of quantum optical applications, is estimated to 2.1. This is the highest value among any QD-based cavity quantum electrodynamics systems reported so far.
116 citations
TL;DR: This work proposes and fabricates very compact laser sources integrated with a passive silicon waveguide circuitry using a subjacent Silicon-On-Insulator waveguide, showing that 90% of coupling efficiency is possible.
Abstract: Heterogeneous integration of III-V compound semiconductors on Silicon on Insulator is one the key technology for next-generation on-chip optical interconnects. In this context, the use of photonic crystals lasers represents a disruptive solution in terms of footprint, activation energy and ultrafast response. In this work, we propose and fabricate very compact laser sources integrated with a passive silicon waveguide circuitry. Using a subjacent Silicon-On-Insulator waveguide, the emitted light from a photonic crystal based cavity laser is efficiently captured. We study experimentally the evanescent wave coupling responsible for the funneling of the emitted light into the silicon waveguide mode as a function of the hybrid structure parameters, showing that 90% of coupling efficiency is possible.
107 citations
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TL;DR: A laser cavity formed from a single defect in a two-dimensional photonic crystal is demonstrated and pulsed lasing action has been observed at a wavelength of 1.5 micrometers from optically pumped devices with a substrate temperature of 143 kelvin.
Abstract: A laser cavity formed from a single defect in a two-dimensional photonic crystal is demonstrated. The optical microcavity consists of a half wavelength–thick waveguide for vertical confinement and a two-dimensional photonic crystal mirror for lateral localization. A defect in the photonic crystal is introduced to trap photons inside a volume of 2.5 cubic half-wavelengths, approximately 0.03 cubic micrometers. The laser is fabricated in the indium gallium arsenic phosphide material system, and optical gain is provided by strained quantum wells designed for a peak emission wavelength of 1.55 micrometers at room temperature. Pulsed lasing action has been observed at a wavelength of 1.5 micrometers from optically pumped devices with a substrate temperature of 143 kelvin.
2,310 citations
TL;DR: Hybrid plasmonic waveguides as discussed by the authors employ a high-gain semiconductor nanostructure functioning as a gain medium that is separated from a metal substrate surface by a nanoscale thickness thick low-index gap.
Abstract: Hybrid plasmonic waveguides are described that employ a high-gain semiconductor nanostructure functioning as a gain medium that is separated from a metal substrate surface by a nanoscale thickness thick low-index gap. The waveguides are capable of efficient generation of sub-wavelength high intensity light and have the potential for large modulation bandwidth >1 THz.
2,060 citations
TL;DR: In this paper, a photonic crystal nanocavity laser with response times as short as a few picoseconds resulting from 75-fold spontaneous emission rate enhancement in the cavity was demonstrated.
Abstract: Spontaneous emission is not inherent to an emitter, but rather depends on its electromagnetic environment. In a microcavity, the spontaneous emission rate can be greatly enhanced compared with that in free space. This so-called Purcell effect can dramatically increase laser modulation speeds, although to date no time-domain measurements have demonstrated this. Here we show extremely fast photonic crystal nanocavity lasers with response times as short as a few picoseconds resulting from 75-fold spontaneous emission rate enhancement in the cavity. We demonstrate direct modulation speeds far exceeding 100 GHz (limited by the detector response time), already more than an order of magnitude above the fastest semiconductor lasers. Such ultrafast, efficient, and compact lasers show great promise for applications in high-speed communications, information processing, and on-chip optical interconnects.
618 citations
TL;DR: In this paper, the authors investigated the design, fabrication, and experimental characterization of high quality factor photonic crystal nanobeam cavities in silicon using a five-hole tapered one-dimensional photonic mirror and precise control of the cavity length.
Abstract: We investigate the design, fabrication, and experimental characterization of high quality factor photonic crystal nanobeam cavities in silicon. Using a five-hole tapered one-dimensional photonic crystal mirror and precise control of the cavity length, we designed cavities with theoretical quality factors as high as 1.4×107. By detecting the cross-polarized resonantly scattered light from a normally incident laser beam, we measure a quality factor of nearly 7.5×105. The effect of cavity size on mode frequency and quality factor was simulated and then verified experimentally.
509 citations
TL;DR: In this paper, the rate equations for a microcavity semiconductor laser are solved and the steady-state behavior of the laser and some of its dynamic characteristics are investigated, and it is shown that by manipulating the mode density and the spontaneous decay rates of the cavity modes, the threshold gain can be decreased and the modulation speed can be improved.
Abstract: The rate equations for a microcavity semiconductor laser are solved and the steady-state behavior of the laser and some of its dynamic characteristics are investigated. It is shown that by manipulating the mode density and the spontaneous decay rates of the cavity modes, the threshold gain can be decreased and the modulation speed can be improved. However, in order to fully exploit the possibilities which the modification of the spontaneous decay opens up, the active material volume in the cavity must be smaller than a certain value. Threshold current using different definitions, population inversion factor, L-I curves, linewidth, and modulation response are discussed. >
363 citations