Photoresponse characteristics from computationally efficient dynamic model of uni-traveling carrier photodiode
01 Sep 2015-pp 183-184
TL;DR: In this article, a time domain model of bulk InGaAs/InP uni-traveling carrier photodiode (UTC-PD) is developed in terms of integral carrier density rate equation.
Abstract: A time domain model of bulk InGaAs/InP uni-traveling carrier photodiode (UTC-PD) is developed in terms of integral carrier density rate equation The wavelength dependent responsivity at different absorption width is derived from the model which shows good agreement with the experimental results The bandwidth of the device is estimated from time dependent photocurrent response
Citations
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TL;DR: An equivalent circuit model of uni-traveling carrier photodiode (UTC-PD) is developed from integral carrier density rate equation and few important properties of the device such as the electrical and optical characteristics are evaluated by employing advanced device physics as discussed by the authors.
Abstract: An equivalent circuit model of uni-traveling carrier photodiode (UTC-PD) is developed from integral carrier density rate equation and few important properties of the device such as the electrical and optical characteristics are evaluated by employing advanced device physics. Circuit model incorporates chip and package parasitic of the device quite simply to provide practical behaviour of UTC-PD. We have developed small signal ac circuit model which is useful for the analysis of low power modulation characteristics of the device and dc circuit model which is advantageous to find wavelength dependent responsivity fairly accurately. At high optical input power the device bandwidth is found to be increased through enhancement of self-induced field in the absorption region and high output power can be derived from the device when absorption width is large. Such condition calls for large signal analysis. We have developed large signal circuit model by combining few mathematical transformations with small signal circuit model with different circuit element values. Our large signal model is unique that the same circuit can be used for both small and large signal analysis. With large signal model the optical power induced bandwidth improvement and output photocurrent saturation are explained. Large signal model is validated through linearity and IP3 analysis which found close agreement with the measured results.
6 citations
19 Dec 2019
TL;DR: In this article, a small signal equivalent circuit model of uni-traveling carrier photodiode (UTC-PD) is developed from integral carrier density rate equation and parasitics are included with it.
Abstract: A small signal equivalent circuit model of uni-traveling carrier photodiode (UTC-PD) is developed from integral carrier density rate equation and parasitics are included with it The technique to obtain scattering parameters from circuit model is given and simulation results are in good agreement with the measurement
References
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Book•
31 Jan 2002
TL;DR: The purpose of this monograph is to clarify the basic principles of modelling and show how these principles can be applied to the real-time environment.
Abstract: Preface. Introduction. Basic Principles. Structures. Materials. Modelling. Basic Network Applications. Functional Applications. Index.
373 citations
"Photoresponse characteristics from ..." refers background in this paper
...]} (2) where is the incident optical frequency in UTC-PD and other material parameters of (2) are given in [4]....
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TL;DR: The unitraveling-carrier photodiode (UTC-PD) as mentioned in this paper utilizes only electrons as the active carriers, which is the key for its ability to achieve excellent high-speed and high-output characteristics simultaneously.
Abstract: The unitraveling-carrier photodiode (UTC-PD) is a novel photodiode that utilizes only electrons as the active carriers. This unique feature is the key for its ability to achieve excellent high-speed and high-output characteristics simultaneously. To date, a record 3-dB bandwidth of 310 GHz and a millimeter-wave output power of over 20 mW at 100 GHz have been achieved. The superior capability of the UTC-PD for generating very large high-bit-rate electrical signals as well as a very high RF output power in millimeter/submillimeter ranges can lead to innovations in various systems, such as broadband optical communications systems, wireless communications systems, and high-frequency measurement systems. Accomplishments include photoreceivers of up to 160 Gb/s, error-free DEMUX operations using an integrated UTC-PD driven optical gate of up to 320 Gb/s, a 10-Gb/s millimeter-wave wireless link at 120 GHz, submillimeter-wave generation at frequencies of up to 1.5 THz, and photonic frequency conversion with an efficiency of -8 dB at 60 GHz. For the practical use, various types of modules, such as a 1-mm coaxial connector module, a rectangular-waveguide output module, and a quasi-optic module, have been developed. The superior reliability and stability are also confirmed demonstrating usefulness of the UTC-PD for the system applications.
369 citations
Journal Article•
TL;DR: In this article, the operation, design, and performance of the uni-traveling-carrier photodiode (UTC-PD) is reviewed. But the authors do not consider the use of InP/InGaAs as an optoelectronic driver.
Abstract: This paper reviews the operation, design, and performance of the uni-traveling-carrier-photodiode (UTC-PD). The UTC-PD is a new type of photodiode that uses only electrons as its active carriers and its prime feature is high current operation. A small signal analysis predicts that a UTC-PD can respond to an optical signal as fast as or faster than a pin-PD. A comparison of measured pulse photoresponse data reveals how the saturation mechanisms of the UTC-PD and pin-PD differ. Applications of InP/InGaAs UTC-PDs as optoelectronic drivers are also presented. key words: photodiode, photoreceiver, InP, InGaAs
183 citations
TL;DR: In this paper, the position of the Fermi level in a semiconductor when the carrier concentration is known is computed using a simple approximation formula for η=EF/kT⩽5.7.
Abstract: Approximate expressions are presented which are useful for computing the position of the Fermi level in a semiconductor when the carrier concentration is known. A simple approximation formula is applicable for η=EF/kT⩽5.7, while an extended approximation can be used up to η⩽20, the error in EF being less than 10−2kT in both cases.
94 citations