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Journal ArticleDOI

Photovoltaic and photo-capacitance effects in ferroelectric BiFeO3 thin film

TL;DR: In this paper, a polycrystalline BiFeO3 film on Pt/Ti/SiO2/Si was fabricated using the spin coating technique, which showed diode-like characteristics with and without poling measured under dark conditions.
Abstract: A polycrystalline BiFeO3 film on Pt/Ti/SiO2/Si was fabricated using the spin coating technique. The film shows diode-like characteristics with and without poling measured under dark conditions. However, it exhibits a switchable photovoltaic effect with light illumination under poled conditions. The measured photovoltaic effect revealed an open circuit voltage of ∼0.47 V and a short circuit current of 3.82 μA/cm2 under the illumination of 165 mW/cm2 irradiance. The studies clarified the dominant role of the depolarization field rather than the interface in the photovoltaic characteristics of the BiFeO3 film. Significantly, the photo-capacitance effect was demonstrated with a substantial enhancement in capacitance (∼45%) in Au/BiFeO3/Pt geometry, which could open up a new window for BiFeO3 applications.
Citations
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Journal ArticleDOI
TL;DR: In this paper, the authors present a comprehensive review on the latest research progress in photovoltaic effects of BiFeO3 materials with different kinds of topography, including bulk, thin film, and nanomaterials.

76 citations


Cites methods from "Photovoltaic and photo-capacitance ..."

  • ...prepared polycrystalline BiFeO3 film on Pt/ Ti/SiO2/Si substrates and measured photovoltaic properties of the Au/ BiFeO3/Pt device [68]....

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Journal ArticleDOI
TL;DR: A novel design was proposed to realize a high photovoltaic output in BiFeO3 films by manipulating its oxygen vacancy concentration through the alteration of the Bi content, and this work may open a new way to realize the high power output and controllable photOVoltaic switching behavior for the photvoltaic applications of Bi FeO3 compounds.
Abstract: Very recently, the ferroelectric photovoltaic property of bismuth ferrite (BiFeO3, BFO) has attracted much attention. However, the physical mechanisms for its anomalous photovoltaic effect and swit...

45 citations

Journal ArticleDOI
TL;DR: The photoferroelectric perovskite solar cells (PPSCs) as discussed by the authors are a class of materials widely applied in solar cells and have both ferroelectric and photovoltaic properties.

41 citations

Journal ArticleDOI
TL;DR: In this article, a switchable and large PV effect is demonstrated in a Pb-free ferroelectric 0.5Ba(Zr0.7Ca0.2Ti0.3)TiO3 (BZT-BCT) thin film fabricated by a pulsed laser deposition technique.
Abstract: Ferroelectrics are considered next generation photovoltaic (PV) materials. In this work, a switchable and large PV effect is demonstrated in a Pb-free ferroelectric 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (BZT-BCT) thin film fabricated by a pulsed laser deposition technique. The material shows a remarkable PV output of 0.81 V due to its morphotropic phase boundary composition. The observed PV effect is analyzed on the basis of the interfacial Schottky barrier and bulk depolarization field. The poling dependent PV studies revealed that although the Schottky and depolarization field contribute to the PV effect, the latter dominates the PV response beyond the coercive field. Additionally, the importance of this compound in the field of a self-biased photodetector is elucidated in terms of calculated photodetector parameters such as responsivity and detectivity. The explored results will bring significant advancement in the field of ferroelectric PV, UV solid state detector applications and also give an additional dimension to the multifunctional ability of the BZT-BCT system.

37 citations

Journal ArticleDOI
TL;DR: In this paper, the authors proposed modification of BiFeO3 by Mn and Ca co-doping, and realized the epitaxial growth of Bi0.98Ca0.02Fe0.05O3 (BCFMO) thin films on (1 0 − 0)-oriented SrTiO3(STO) substrates with a SrRuO3 buffer layer via pulsed laser deposition (PLD).

36 citations

References
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Journal ArticleDOI
01 Jun 1977-Nature
TL;DR: A review of dielectric data for a wide range of solids proves the existence of a remarkable "universality" of frequency and time responses which is essentially incompatible with the multiplicity of currently accepted detailed interpretations as discussed by the authors.
Abstract: A review of dielectric data for a wide range of solids proves the existence of a remarkable ‘universality’ of frequency and time responses which is essentially incompatible with the multiplicity of currently accepted detailed interpretations. Certain unique features of the universal behaviour strongly suggest the dominant role of many-body interactions.

4,234 citations

Book
01 Jan 1979
TL;DR: In this article, a brief description is given of the various manifestations of the universal fractional power law relaxation processes, which are contrasted with the classical or Debye law, and a novel very general approach based on the so-called energy criterion is introduced.
Abstract: A brief description is given of the various manifestations of the universal fractional power law relaxation processes, which are contrasted with the classical or Debye law. It is shown that the universal law is indeed found in a remarkable variety of physical and chemical situations, and this is deemed to merit a special attempt at finding a suitably general theoretical model. Several such models are briefly described, and a novel very general approach based on the so-called energy criterion is introduced. It is concluded that it is not yet possible to establish with certainty the validity of any of the models. >

4,012 citations

Journal ArticleDOI
03 Apr 2009-Science
TL;DR: It is found that bulk electric conduction in ferroelectric monodomain BiFeO3 crystals is highly nonlinear and unidirectional.
Abstract: Unidirectional electric current flow, such as that found in a diode, is essential for modern electronics. It usually occurs at asymmetric interfaces such as p-n junctions or metal/semiconductor interfaces with Schottky barriers. We report on a diode effect associated with the direction of bulk electric polarization in BiFeO3: a ferroelectric with a small optical gap edge of ∼2.2 electron volts. We found that bulk electric conduction in ferroelectric monodomain BiFeO3 crystals is highly nonlinear and unidirectional. This diode effect switches its direction when the electric polarization is flipped by an external voltage. A substantial visible-light photovoltaic effect is observed in BiFeO3 diode structures. These results should improve understanding of charge conduction mechanisms in leaky ferroelectrics and advance the design of switchable devices combining ferroelectric, electronic, and optical functionalities.

1,610 citations

Journal ArticleDOI
TL;DR: A fundamentally different mechanism for photovoltaic charge separation is reported, which operates over a distance of 1-2 nm and produces voltages that are significantly higher than the bandgap.
Abstract: In conventional solid-state photovoltaics, electron-hole pairs are created by light absorption in a semiconductor and separated by the electric field spaning a micrometre-thick depletion region. The maximum voltage these devices can produce is equal to the semiconductor electronic bandgap. Here, we report the discovery of a fundamentally different mechanism for photovoltaic charge separation, which operates over a distance of 1-2 nm and produces voltages that are significantly higher than the bandgap. The separation happens at previously unobserved nanoscale steps of the electrostatic potential that naturally occur at ferroelectric domain walls in the complex oxide BiFeO(3). Electric-field control over domain structure allows the photovoltaic effect to be reversed in polarity or turned off. This new degree of control, and the high voltages produced, may find application in optoelectronic devices.

1,434 citations

Journal ArticleDOI
TL;DR: The room-temperature manipulation of magnetization by an electric field using the multiferroic BiFeO3 represents an essential step towards the magnetoelectric control of spintronics devices.
Abstract: The room-temperature manipulation of magnetization by an electric field using the multiferroic BiFeO3 represents an essential step towards the magnetoelectric control of spintronics devices.

1,345 citations