Photovoltaic Properties of Cu2S–CdS Heterojunctions
01 Aug 1970-Journal of Applied Physics (American Institute of Physics)-Vol. 41, Iss: 9, pp 3731-3738
TL;DR: In this paper, heat treatment and photovoltaic properties of copper disulfide-cadmium sulfide heterojunctions, measuring I-V characteristics, capacitance and spectral response, were investigated.
Abstract: Heat treatment and photovoltaic properties of copper disulfide-cadmium sulfide heterojunctions, measuring I-V characteristics, capacitance and spectral response
Citations
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TL;DR: The rational synthesis of colloidal copper(I) sulfide nanocrystals are presented and their application as an active light absorbing component in combination with CdS nanorods to make a solution-processed solar cell with 1.6% power conversion efficiency is demonstrated.
Abstract: We present the rational synthesis of colloidal copper(I) sulfide nanocrystals and demonstrate their application as an active light absorbing component in combination with CdS nanorods to make a solution-processed solar cell with 1.6% power conversion efficiency on both conventional glass substrates and flexible plastic substrates with stability over a 4 month testing period.
642 citations
TL;DR: The current-voltage characteristics of ZnO/PbS quantum dot (QD) solar cells show a QD size-dependent behavior resulting from a Schottky junction that forms at the back metal electrode opposing the desirable diode formed between theZnO and PbS QD layers.
Abstract: The current−voltage (J−V) characteristics of ZnO/PbS quantum dot (QD) solar cells show a QD size-dependent behavior resulting from a Schottky junction that forms at the back metal electrode opposing the desirable diode formed between the ZnO and PbS QD layers. We study a QD size-dependent roll-over effect that refers to the saturation of photocurrent in forward bias and crossover effect which occurs when the light and dark J−V curves intersect. We model the J−V characteristics with a main diode formed between the n-type ZnO nanocrystal (NC) layer and p-type PbS QD layer in series with a leaky Schottky-diode formed between PbS QD layer and metal contact. We show how the characteristics of the two diodes depend on QD size, metal work function, and PbS QD layer thickness, and we discuss how the presence of the back diode complicates finding an optimal layer thickness. Finally, we present Kelvin probe measurements to determine the Fermi level of the QD layers and discuss band alignment, Fermi-level pinning, a...
294 citations
TL;DR: In this article, the stoichiometry and electronic properties of bulk Cu2S thin films obtained by vacuum evaporation were investigated by optical spectroscopy, X-ray diffraction and photo-emission spectrographs.
164 citations
Patent•
15 Dec 1980TL;DR: In this paper, a photovoltaic module is disclosed in the form of a shingle having an active portion containing PV cells and an inactive mounting portion, where flat flexible ribbon-like positive and negative leads extend from the terminals in the active portion.
Abstract: A photovoltaic module is disclosed in the form of a shingle having an active portion containing photovoltaic cells and an inactive mounting portion. Flat flexible ribbon-like positive and negative leads extend from the terminals in the active portion. The individual modules are mounted on a surface by means of fasteners extending through the inactive portions of the modules. At the time of installation, the flexible leads are folded to provide a servicing loop and the ends of the leads are then connected into the electrical network of the system. Individual modules can be removed from the system by moving the modules in their own planes away from the array of modules with accompanying straightening of the loops so that modules can be replaced. Improved circuit arrangements for connecting modules in an array and improved installation methods are disclosed which take advantage of the flat flexible conductors extending from the modules.
150 citations
TL;DR: In this article, thin Cu2−xSe thin films were evaporated and deposited on glass substrates by a vacuum evaporation method, and the films showed a low resistivity p-type conduction.
119 citations
References
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TL;DR: In this paper, the electron and hole ionization energy of imperfections in single crystals of cadmium sulfo-selenide solid solutions have been measured by a variety of photoelectronic techniques.
Abstract: The electron and/or hole ionization energy of imperfections in single crystals of cadmium sulfo‐selenide solid solutions have been measured by a variety of photoelectronic techniques including optical absorption, optical quenching of photoconductivity, thermal quenching of photoconductivity, photoconductivity decay, and thermally stimulated conductivity. Both the optical and thermal hole ionization energy of sensitizing center acceptors undergo an abrupt decrease from a value characteristic of cadmium sulfide (∼1 eV) to a value characteristic of cadmium selenide (∼0.6 eV) between 30% and 50% cadmium selenide. The same transition is observed as an abrupt increase in the energy of the imperfection absorption edge, corresponding to the optical electron ionization energy of these centers. The electron ionization energy of electron traps varies approximately proportionally to the band gap throughout the solid solution range.
73 citations
TL;DR: In this article, single crystals of p-Cu2S are obtained with a hole concentration of 7.4 × 1019 cm−3, a mobility of 25 cm2 V−1 S−1, and a thermoelectric power of 90 mV/deg.
Abstract: Single crystals of p-Cu2S are obtained with a hole concentration of 7.4 × 1019 cm−3, a mobility of 25 cm2 V−1 S−1, and a thermoelectric power of 90 mV/deg. The electrical conductivity, thermoelectric power and Hall effect are measured between 20 and 600°C. A jump due to structural transformations is observed in the temperature dependence of these parameters at 125 and 480°C. The activation energy is found to have a value of 1.8 eV for the intrinsic range of the conductivity, the value found for the extrinsic range being 0.064 eV.
An p-Cu2S-Einkristallen mit einer Locherkonzentration von 7,4 × 1019 cm−3, einer Beweglichkeit von 25 cm2 V−1 s−1 und einer Thermokraft von 90 mV/grd wurden im Temperaturbereich 20 bis 600°C die elektrische Leitfahigkeit, die Thermokraft und der Halleffekt gemessen. Ein durch Strukturveranderungen verursachter Sprung in der Temperaturabhangigkeit dieser Parameter wird bei 125 und 480°C beobachtet. Fur die Aktivierungsenergie wird im Eigenleitungsbereich ein Wert von 1,8 eV und fur den Storleitungsbereich ein Wert von 0,064 eV gefunden.
45 citations
TL;DR: In this article, the experimental measurements of the isothermal Hall effect on the γ-cuprous sulfide were performed with the following results: the values of R, µ and l decrease in the β-phase.
Abstract: The experimental measurements of the isothermal Hall effect on the γ-cuprous sulfide were performed with the following results. In the stoichiometric specimens, the values of Hall constant R are about \(3{\sim}4{\times}10^{9}\left[\frac{\text{Volt}{\cdot}\text{cm}}{\text{Gauss}{\cdot}\text{amp}}\right]\), mobility µ and mean free path l are about 12[cm 2 /Volt·sec], 9[cm], respectively. These values of R , µ and l decrease in the β-phase. As compared with the stoichiometric specimens, the values of µ and l in the sulphur excess specimens do not increase so much as the conductivities do. On the contrary, in the sulphur deficient specimens, the decrease of µ and l is not so remarkable in comparison with that of conductivities. These phenomena may be considered that the impurity scattering due to the free electrons and holes makes the values of µ and l reduce.
41 citations
TL;DR: In this paper, the optical quenching spectrum in CdS and ZnS single crystals has been investigated as a function of temperature, using a high-resolution monochromator and polarized light.
Abstract: The optical quenching spectrum in CdS and ZnS single crystals has been investigated as a function of temperature, using a high‐resolution monochromator and polarized light. The well‐known spectrum in both materials consists of a narrow band with maximum at about 0.9 eV and a broader band with onset at about 1.1 eV. Poorly resolved fine structure was detected in the 0.9 eV band in CdS between 0.83 and 0.92 eV; no fine structure was detected in the higher‐energy band. No fine structure could be detected in the less accurate measurements on ZnS. No polarization effects of any kind were detected in either material. Studies of the temperature dependence of optical quenching confirm the early indications described by Bube, and indicate anew the intrinsically complex nature of the sensitizing center. The problems related to distinguishing between intrinsic‐defect and copper‐impurity effects are discussed.
31 citations
TL;DR: Minority carrier diffusion length on sides of copper sulfide-cadmium sulfide heterojunctions measured by light microprobes as discussed by the authors was shown to be a function of the number of minority carriers.
Abstract: Minority carrier diffusion lengths on sides of copper sulfide-cadmium sulfide heterojunctions measured by light microprobes
26 citations