Physical mechanisms of short-channel effects of lateral double-gate tunnel FET
Abstract: This paper discusses the mechanisms that may underlie the short-channel effects of the lateral double-gate tunnel FET. Simulations suggest that the short-channel effect of the threshold voltage is triggered by degradation in the electrostatic integrity of the gate field.
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...The gate length Lg is set as 100 nm to exclude the short-channel effect of threshold voltage , ....
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