Physical Model for the Resistivity and Temperature Coefficient of Resistivity in Heavily Doped Polysilicon
TL;DR: In this paper, the authors proposed a model that considers single-crystal silicon grain in equilibrium with amorphous silicon grain boundary to obtain near zero temperature coefficient of resistivity.
Abstract: One of the key benefits of using polysilicon as the material for resistors and piezoresistors is that the temperature coefficient of resistivity (TCR) can be tailored to be negative, zero, or positive by adjusting the doping concentration. This paper focuses on optimization of the boron doping of low-pressure chemical vapor deposited polysilicon resistors for obtaining near-zero TCR and development of a physical model that explains quantitatively all the results obtained in the optimization experiments encompassing the doping concentration ranges that show negative, near-zero, and positive TCR values in the polysilicon resistors. The proposed model considers single-crystal silicon grain in equilibrium with amorphous silicon grain boundary. The grain boundary carrier concentration is calculated considering exponential band tails in the density of states for amorphous silicon in the grain boundaries. Comparison of the results from the model shows excellent agreement with the measured values of resistivity as well as TCR for heavily doped polysilicon. It is shown that the trap density for holes in the grain boundary increases as the square root of the doping concentration, which is consistent with the defect compensation model of doping in the amorphous silicon grain boundaries
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TL;DR: In this paper, the thermoresistive effect in metals and semiconductors has been thoroughly investigated, leading to the significant growth and successful demonstration of thermal-based sensors, such as temperature sensors, convective accelerometers and gyroscopes, and thermal flow sensors.
Abstract: Microelectromechanical systems sensors have been intensively developed utilizing various physical concepts, such as piezoresistive, piezoelectric, and thermoresistive effects. Among these sensing concepts, the thermoresistive effect is of interest for a wide range of thermal sensors and devices, thanks to its simplicity in implementation and high sensitivity. The effect of temperature on the electrical resistance of some metals and semiconductors has been thoroughly investigated, leading to the significant growth and successful demonstration of thermal-based sensors, such as temperature sensors, convective accelerometers and gyroscopes, and thermal flow sensors. In this paper, we review the fundamentals of the thermoresistive effect in metals and semiconductors. We also discuss the influence of design and fabrication parameters on the thermoresistive sensitivity. This paper includes several desirable features of thermoresistive sensors and recent developments in these sensors are summarized. This review provides insights into how it is affected by various parameters, and useful guidance for industrial designers in terms of high sensitivity and linearity and fast response. [2017-0022]
104 citations
Cites background from "Physical Model for the Resistivity ..."
...Many studies have focused on developing zero-TCR systems with semiconductors and inorganic compounds [117], [118], [140], [142], [143]....
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...semiconductor films [117], [118], [140]....
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TL;DR: The proposed method can provide a valuable tool for continuous health monitoring in emerging applications of SiC devices to high-reliability applications and potentially good sensitivity to temperature variation and linearity over a wide operating range.
Abstract: This paper examines a number of techniques for junction temperature estimation of silicon carbide (SiC) MOSFET s devices based on the measurement of temperature sensitive electrical parameters for use in online condition monitoring. Linearity, sensitivity to temperature, and circuit design for practical implementation are discussed in detail. A demonstrator based on the measurement of the quasi-threshold voltage, the turn- on transient characteristic ( $di/ dt$ ), the on -state voltage, and the gate current peak is designed and validated. It is shown that the threshold voltage, the estimation of the gate current peak, and the on -state voltage have potentially good sensitivity to temperature variation and linearity over a wide operating range. Very low sensitivity to temperature is shown for $di/ dt$ . The proposed method can provide a valuable tool for continuous health monitoring in emerging applications of SiC devices to high-reliability applications.
97 citations
TL;DR: In this article, the thermoresistive properties of graphite on paper (GOP) were investigated and a negative temperature coefficient of resistance (TCR) from −2900 to −4400 ppm K−1 was observed for the GOP.
Abstract: This paper reports on the thermoresistive properties of graphite on paper (GOP). A negative temperature coefficient of resistance (TCR) from −2900 to −4400 ppm K−1 was observed for the GOP. This negative and large TCR is attributed to an increase in the thermionic emission current over a low potential barrier with increasing temperature. The potential barrier was found to be 33 meV between the graphite grains. The paper also demonstrates the use of the GOP in a highly sensitive (0.83 mV (m s−1)−0.8 mW−1) GOP-based anemometer, indicating strong feasibility of using this material for low-cost and sensitive thermal sensing applications.
97 citations
TL;DR: In this paper, the authors presented a passive technique for temperature compensation of silicon piezoresistive pressure sensors. But the main drawback of current piezoreistive sensors is the drop of output voltage with increase in the operating temperature which severely reduces the measurement accuracy.
62 citations
Cites background from "Physical Model for the Resistivity ..."
...The TCR of polysilicon resistors in low doping concentrations (less than 10 cm ) is negative which causes drop in their resistance as temperature increases [10,11]....
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Journal Article•
TL;DR: In this article, the authors reviewed the relevant micromachining technology and the design considerations and gave the details of the polysilicon piezoresistor based pressure sensors with Silicon On Insulator (SOI) approach for integrating pressure sensor and associated electronics.
Abstract: Silicon micromachining for realizing micro mechanical structures has received considerable interest due to the several advantages of this technology over the conventional machining techniques. Silicon pressure sensors were the first micro mechanical transducers developed. Since then the market for micromachined pressure sensors has grown in leaps and bounds and found application in all walks of life including defense and space applications. The relevant micromachining technology and the design considerations are reviewed in this paper. The paper also gives the latest developments in this area and gives the details of the polysilicon piezoresistor based pressure sensors with Silicon On Insulator (SOI) approach for integrating pressure sensor and associated electronics.
58 citations
References
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TL;DR: In this article, Boron doses of 1×1012-5×1015/cm2 were implanted at 60 keV into 1-μm-thick polysilicon films and Hall and resistivity measurements were made over a temperature range −50-250 °C.
Abstract: Boron doses of 1×1012–5×1015/cm2 were implanted at 60 keV into 1‐μm‐thick polysilicon films. After annealing at 1100 °C for 30 min, Hall and resistivity measurements were made over a temperature range −50–250 °C. It was found that as a function of doping concentration, the Hall mobility showed a minimum at about 2×1018/cm3 doping. The electrical activation energy was found to be about half the energy gap value of single‐crystalline silicon for lightly doped samples and decreased to less than 0.025 eV at a doping of 1×1019/cm3. The carrier concentration was very small at doping levels below 5×1017/cm3 and increased rapidly as the doping concentration was increased. At 1×1019/cm3 doping, the carrier concentration was about 90% of the doping concentration. A grain‐boundary model including the trapping states was proposed. Carrier concentration and mobility as a function of doping concentration and the mobility and resistivity as a function of temperature were calculated from the model. The theoretical and ex...
2,657 citations
"Physical Model for the Resistivity ..." refers methods or result in this paper
...[2] proposed the thermionic emission (TE)–thermionic field emission (TFE)–thermionic field emission scattering (TFES) model in 1983 as a refinement of the carrier trapping model proposed by Seto [1]....
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...Lu et al. [2] proposed the thermionic emission (TE)–thermionic field emission (TFE)–thermionic field emission scattering (TFES) model in 1983 as a refinement of the carrier trapping model proposed by Seto [1]....
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...This has also been shown by Seto [1] and is consistent with the picture of the grain boundary being amorphous....
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TL;DR: In this paper, an analytical expression for the electron and hole mobility in silicon based on both experimental data and modified Brooks-Herring theory of mobility was derived, which allows one to obtain electron and holes mobility as a function of concentration up to \sim 10^{20} cm-3 in an extended and continuous temperature range (250-500 K) within ± 13 percent of the reported experimental values.
Abstract: An analytical expression has been derived for the electron and hole mobility in silicon based on both experimental data and modified Brooks-Herring theory of mobility. The resulting expression allows one to obtain electron and hole mobility as a function of concentration up to \sim 10^{20} cm-3in an extended and continuous temperature range (250-500 K) within ± 13 percent of the reported experimental values.
886 citations
"Physical Model for the Resistivity ..." refers methods in this paper
...μc is a function of doping concentration and temperature and is given by the analytical expression [7]...
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TL;DR: In this article, the authors discuss the role of disordered structures in the evolution of the electron in disordered structure and propose a method to find disordered electron structures in a graph.
Abstract: (1967). Electrons in disordered structures. Advances in Physics: Vol. 16, No. 61, pp. 49-144.
871 citations
Additional excerpts
...N” rule of Mott [13], each atom in a disordered material has all its electrons in bonds and takes on its natural coordination determined by the number of valence electronsN ....
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...According to the “8-N” rule of Mott [13], each atom in a disordered material has all its electrons in bonds and takes on its natural coordination determined by the number of valence electronsN ....
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TL;DR: In this article, it was shown that the electrical conductivity of a tetrahedral amorphous semiconductor can be controlled over many orders of magnitude by doping with substitutional impurities.
520 citations
"Physical Model for the Resistivity ..." refers background in this paper
...The fact that hydrogenated amorphous silicon (a-Si:H) can be doped as both n and p types [14] was explained by the defect compensation model of Street in 1982 [15]....
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PARC1
TL;DR: In this paper, the doping of hydrogenated amorphous silicon is discussed within the context of Mott's $8-ensuremath{-}N$ rule, and found to have properties distinctly different from dopants in crystalline silicon.
Abstract: The doping of hydrogenated amorphous silicon is discussed within the context of Mott's $8\ensuremath{-}N$ rule, and found to have properties distinctly different from dopants in crystalline silicon. A unifying description of dopant and defect states based on the position of the Fermi energy is given. Some possible consequences of the $8\ensuremath{-}N$ rule for the deposition and structure of $a$-Si: H are also discussed.
411 citations
"Physical Model for the Resistivity ..." refers background in this paper
...The fact that hydrogenated amorphous silicon (a-Si:H) can be doped as both n and p types [14] was explained by the defect compensation model of Street in 1982 [15]....
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