Piezoelectric element, piezoelectric device and manufacturing method therefor

TL;DR: In this article, the difference between a maximum value and a minimum value of energy at the Na-K absorption end of the piezoelectric layer 4 in the film thickness direction, measured by electron energy loss spectrometry or X-ray absorption fine structure analysis, is 0.8 eV or less.

Abstract: PROBLEM TO BE SOLVED: To provide a piezoelectric element and a piezoelectric device manufactured stably and having excellent piezoelectric characteristics by controlling the local structure (bonding state of atom) of a piezoelectric layer with high accuracy.SOLUTION: In a piezoelectric element 10 where at least a lower electrode layer 3, a piezoelectric layer 4 represented by a general formula (NaKLi)NbO(0

TL;DR: In this article, a piezoelectric element has, from a substrate side, a first electrode, a composite oxide of an ABO3 type perovskite structure containing Mg, and a second electrode, which are laminated, in which the first electrode includes a diffusion suppressing layer which suppresses diffusion of the Mg and a diffusion layer which diffuses the mg.

Abstract: A piezoelectric element has, from a substrate side, a first electrode, a piezoelectric layer containing a composite oxide of an ABO3 type perovskite structure containing Mg, and a second electrode, which are laminated, in which the first electrode includes a diffusion suppressing layer which suppresses diffusion of the Mg and a diffusion layer which diffuses the Mg as compared with the diffusion suppressing layer, and the diffusion suppressing layer is provided on the substrate side relative to the diffusion layer.

TL;DR: In this paper, a flexible sound sensor with high sound and electricity conversion efficiency was proposed, which is composed of a piezoelectric film layer and a lower electrode layer.

Abstract: The invention relates to a flexible sound sensor with high sound and electricity conversion efficiency. The flexible sound sensor is of a composite layer structure, and comprises a piezoelectric filmlayer and a lower electrode layer, wherein the piezoelectric film layer and the lower electrode layer are adjacent, and the single-side surface of the piezoelectric film layer is only partially combined with the lower electrode layer, and a cavity is formed between the rest part and the lower electrode layer; and the maximum voltage output of the flexible sound sensor under the sound wave with thedecibel of 80 dB and the frequency of 220 Hz is 0.9-2.7mV/cm2. according to the flexible sound sensor, the sound-electricity conversion efficiency of the flexible sound sensor is high; compared witha flexible sound sensor, the piezoelectric film layer of which is completely attached to the lower electrode layer, the sound-electricity conversion efficiency of the flexible sound sensor provided bythe invention is improved by 50%-350%; meanwhile, the preparation process of the flexible sound sensor is simple, the main structure mode of the piezoelectric film is not changed, the flexibility ofthe sensor is not influenced, and the problem that the sound-electricity conversion efficiency of the flexible sound sensor is greatly weakened caused by that the vibration effect of the piezoelectricfilm is limited due to the vibration absorption phenomenon of the lower electrode material can be solved effectively.

TL;DR: In this article, a piezoelectric thin film element and a thin-film device are described, which can be produced in improved yields and can be used to improve the performance and efficiency of the PPI.

Abstract: Disclosed are a piezoelectric thin film element and a piezoelectric thin film device which have improved piezoelectric properties and high performance and can be produced in improved yields The piezoelectric thin film element ( 1 ) comprises: a substrate ( 10 ), and a piezoelectric thin film ( 40 ) which is arranged on the substrate ( 10 ), has at least one crystal structure represented by general formula (Na x K y Li z )NbO 3 (0≦x≦1, 0≦y≦1, 0≦z≦02, x+y+z=1) and selected from the group consisting of pseudo-cubic crystal, a hexagonal crystal, and an orthorhombic crystal, and contains an inert gas element at a ratio of 80 ppm or less by mass

TL;DR: In this paper, the problem of providing a piezoelectric thin film element with high performance and high reliability, and to improve the manufacturing yield of the thin-film piezo-lectric device was addressed.

Abstract: PROBLEM TO BE SOLVED: To provide a piezoelectric thin film element capable of improving piezoelectric properties, to obtain a thin film piezoelectric device having high performance and high reliability, and to improve the manufacturing yield of the thin film piezoelectric device. SOLUTION: A piezoelectric thin film laminate has on a substrate at least a lower electrode, a piezoelectric thin film represented by general formula (Na x K y Li z )NbO 3 (0≤x≤1, 0≤y≤1, 0≤z≤0.2, and x+y+z=1), and an upper electrode, wherein those electrodes each have a crystal structure of a cubic crystal system, a tetragonal crystal system, an orthorhombic crystal system, a hexagonal crystal system, a monoclinic crystal system, a triclinic crystal system, or a trigonal crystal system, or has a state in which one of these crystals coexists. Crystal axes are preferentially oriented to a specific axis equal to or smaller than two axes of these crystals, and a ratio c/a' is set in a range of 0.992 or more and 0.999 or less, which is the ratio of a lattice plane spacing (c) in a direction of a normal line to a lattice plane spacing a' whose inclination angle from the substrate surface is in a range of 10° or more and 30° or less. COPYRIGHT: (C)2011,JPO&INPIT

TL;DR: In this article, the authors proposed a method for producing a piezoelectric thin-film element with a lead-free device having long life and a high piezelectric constant.

Abstract: PROBLEM TO BE SOLVED: To provide: a piezoelectric thin film element with which a lead-free device having long life and a high piezoelectric constant can be manufactured with a high yield; a method for producing the piezoelectric thin film; and a piezoelectric thin film device.SOLUTION: The piezoelectric thin film element 1 includes: a substrate 10; and a piezoelectric thin film 40 formed on the substrate 10 and having a niobium oxide-based perovskite structure represented by general formula: (NaKLi)NbO(0≤x≤1, 0≤y≤1, 0≤z≤0.2 and x+y+z=1). The piezoelectric thin film 40 has: an organic molecule selected from the group consisting of CH, CH, CH, CH, CH, CHOH, CHOH and CHO; a molecule containing a group selected from the group consisting of a hydroxyl group, an acyl group, a carbonyl group, an alkynyl group and a carboxyl group; or a molecule containing a bond selected from the group consisting of an O-H bond, a C-O bond, a C=O bond, a C≡C bond and an O-O bond.