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Point defects and luminescence centres in zinc oxide and zinc oxide doped with manganese

M. Liu, +2 more
- 01 Aug 1992 - 
- Vol. 54, Iss: 1, pp 35-42
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TLDR
The green and yellow luminescence centres in ZnO and Mn-doped ZnOs are investigated in this article, and it seems that a VZn · V0 divacancy exists, and that luminecence is due to interstitial zinc and oxygen.
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This article is published in Journal of Luminescence.The article was published on 1992-08-01. It has received 678 citations till now. The article focuses on the topics: Luminescence & Zinc.

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Citations
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Mechanisms behind green photoluminescence in ZnO phosphor powders

TL;DR: In this article, the authors explore the interrelationships between the green 510 nm emission, the free-carrier concentration, and the paramagnetic oxygen vacancy density in commercial ZnO phosphors by combining photoluminescence, optical absorption, and electron paramagnetic resonance spectroscopies.
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Green luminescent center in undoped zinc oxide films deposited on silicon substrates

TL;DR: The photoluminescence (PL) spectra of undoped ZnO films deposited on Si substrates by dc reactive sputtering have been studied in this paper, where two emission peaks, centered at 3.18 eV and 2.38 eV, were found to correspond to oxide antisite defect OZn rather than oxygen vacancy VO, zinc vacancy VZn, interstitial zinc Zni, and interstitial oxygen Oi.
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Optical properties of ZnO nanostructures.

TL;DR: A review of current research on the optical properties of ZnO nanostructures and results of nonlinear optical studies, such as second-harmonic generation, are presented.
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Recent progress in processing and properties of ZnO

TL;DR: In this paper, the authors summarize recent progress in doping control, materials processing methods such as dry etching and Ohmic and Schottky contact formation, new understanding of the role of hydrogen and finally the prospects for control of ferromagnetism in transition-metal doped ZnO.
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On the optical band gap of zinc oxide

TL;DR: In this paper, the optical properties of ZnO crystals using a variety of optical techniques were compared and it was concluded that the room temperature band gap is 3.3 eV and that the other values are attributable to a valence band-donor transition at ∼3.15
References
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Journal ArticleDOI

Positron studies of condensed matter

R.N. West
- 01 May 1973 - 
TL;DR: In this article, a review of the use of the positron-electron annihilation phenomenon in the physics of condensed matter is presented, where the theory of the annihilation process is outlined, the importance of the two-photon mode of decay is established, and the observable results depend on the initial positron and electron states of the system.
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Surface effects on the low‐energy cathodoluminescence of zinc oxide

TL;DR: In this article, a quantitative model leads to an explanation of the dependence on surface potential in terms of field-aided or retarded surface recombination, and evidence is given that temporarily recovered surfaces result from dynamic surface adsorption of barium.
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Screening of positrons in semiconductors and insulators

TL;DR: This material is protected by copyright and other intellectual property rights, and duplication or sale of all or part of any of the repository collections is not permitted, except that material may be duplicated by you for your research use or educational purposes in electronic or print form.
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The yellow luminescence of zinc oxide

TL;DR: From a simultaneous observation of the ESR of the paramagnetic Li center and the yellow emission of ZnO, especially its polarization, it was concluded that this luminescence band is due to a recombination of an electron with the neutral Li acceptor.
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Positron trapping in semiconductors.

TL;DR: La comparaison avec le cas des metaux laisse envisager de nouveaux mecanismes avec des excitations electron-trou and phononique.
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