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Journal ArticleDOI

Polar optical phonon scattering limited free carrier absorption in semiconductors with ellipsoidal energy band structure

01 Sep 1975-Journal of Physics and Chemistry of Solids (Pergamon)-Vol. 36, Iss: 9, pp 945-947
TL;DR: In this article, the authors derived a formula for the calculation of free carrier absorption in semiconductors with ellipsoidal energy band structure, including the effects of electron screening, when the dominant scattering mechanism is due to polar modes.
About: This article is published in Journal of Physics and Chemistry of Solids.The article was published on 1975-09-01. It has received 1 citations till now. The article focuses on the topics: Free carrier absorption & Band gap.
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Journal ArticleDOI
H.D. Dimitrov1
TL;DR: In this paper, the high-frequency electrical conductivity, dielectric losses and free-carrier absorption in crystals are calculated when the scattering mechanism is connected with the screened electrical dipoles.
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01 Jan 1972

175 citations

Journal ArticleDOI
TL;DR: In this paper, the breakdown strength of ionic crystals at low and moderate temperatures is calculated on the basis of von Hippel's low energy criterion, modified to take account of the electronic polarizability of the ions.
Abstract: The electric breakdown strength of ionic crystals at low and moderate temperatures is calculated on the basis of von Hippel's low energy criterion. Fr\"ohlich's method of calculation, modified to take account of the electronic polarizability of the ions, is employed. The breakdown strength at $T=0\ifmmode^\circ\else\textdegree\fi{}$ is ${F}_{0}(\frac{\mathrm{volts}}{\mathrm{cm}})=134\ifmmode\times\else\texttimes\fi{}{10}^{6}{(\ensuremath{\hbar}{\ensuremath{\omega}}_{t})}_{\mathrm{ev}}[\frac{({\ensuremath{\epsilon}}_{s}\ensuremath{-}{\ensuremath{\epsilon}}_{0})}{{({\ensuremath{\epsilon}}_{s}\ensuremath{\epsilon}_{0}^{}{}_{}{}^{3})}^{\frac{1}{2}}}](\frac{{m}^{*}}{m})$ where ${(\ensuremath{\hbar}{\ensuremath{\omega}}_{t})}_{\mathrm{ev}}$ is the reststrahl energy in electron volts, ${\ensuremath{\epsilon}}_{s}$ and ${\ensuremath{\epsilon}}_{0}$ are the static and optical values of the dielectric constant, and $\frac{{m}^{*}}{m}$ is the ratio of the effective mass to the free electron mass. The breakdown strength increases slowly with increasing temperature. The lack of dependence of the breakdown on crystallographic orientation and the strong directional dependence of the breakdown paths are qualitatively accounted for.

174 citations

Journal ArticleDOI
H. Ehrenreich1
TL;DR: In this paper, the mobility, thermoelectric power, Hall coefficient, and far infrared reflectivity of InSb are calculated, taking account of the non-parabolic conduction band as well as the correct wave functions of the electrons.

134 citations

Journal ArticleDOI
H. J. G. Meyer1

109 citations

Journal ArticleDOI
TL;DR: In this paper, the free carrier absorption data for n -GaAs, -InP, -GaP and -GaSb are analyzed in order to investigate the scattering mechanism of electrons.
Abstract: The free carrier absorption data for n -GaAs, -InP, -GaP and -GaSb are analysed in order to investigate the scattering mechanism of electrons. The magnitudes of the deformation potential constant E 1 are found to be ∼6 eV for GaAs, ∼0 eV for InP, ∼55 eV for GaP and ∼60 eV for GaSb. It is found from this that, among acoustic and optical phonon scatterings, the former is predominant in GaP and GaSb, and the latter predominant in GaAs and InP. The impurity concentration is found to be very large compared with the electron concentration, for the samples of GaAs and InP with low carrier concentrations. This suggests the presence of some additional scatterers different from the ordinary ones, that is, lattice vibrations and ionized impurities. From the present analysis, it is inferred that the absorption coefficient due to additional scatterers have a wavelength dependence very similar to the one due to ionized impurities.

89 citations