Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction
TL;DR: A broadband photodetector using a layered black phosphorus transistor that is polarization-sensitive over a bandwidth from ∼400 nm to 3,750‽nm is demonstrated and might provide new functionalities in novel optical and optoelectronic device applications.
Abstract: The ability to detect light over a broad spectral range is central to practical optoelectronic applications and has been successfully demonstrated with photodetectors of two-dimensional layered crystals such as graphene and MoS2. However, polarization sensitivity within such a photodetector remains elusive. Here, we demonstrate a broadband photodetector using a layered black phosphorus transistor that is polarization-sensitive over a bandwidth from ∼400 nm to 3,750 nm. The polarization sensitivity is due to the strong intrinsic linear dichroism, which arises from the in-plane optical anisotropy of this material. In this transistor geometry, a perpendicular built-in electric field induced by gating can spatially separate the photogenerated electrons and holes in the channel, effectively reducing their recombination rate and thus enhancing the performance for linear dichroism photodetection. The use of anisotropic layered black phosphorus in polarization-sensitive photodetection might provide new functionalities in novel optical and optoelectronic device applications. The anisotropic optical properties of black phosphorus can be exploited to fabricate photodetectors with linear dichroism operating over a broad spectral range.
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TL;DR: In this paper, the state of the art of optical modulators based on 2D materials, including graphene, transition metal dichalcogenides and black phosphorus, is reviewed.
Abstract: Light modulation is an essential operation in photonics and optoelectronics. With existing and emerging technologies increasingly demanding compact, efficient, fast and broadband optical modulators, high-performance light modulation solutions are becoming indispensable. The recent realization that 2D layered materials could modulate light with superior performance has prompted intense research and significant advances, paving the way for realistic applications. In this Review, we cover the state of the art of optical modulators based on 2D materials, including graphene, transition metal dichalcogenides and black phosphorus. We discuss recent advances employing hybrid structures, such as 2D heterostructures, plasmonic structures, and silicon and fibre integrated structures. We also take a look at the future perspectives and discuss the potential of yet relatively unexplored mechanisms, such as magneto-optic and acousto-optic modulation.
1,158 citations
TL;DR: The development, challenges and opportunities of van der Waals integration for flexible integration of diverse material systems beyond two dimensions are reviewed, and its potential for creating artificial heterostructures or superlattices beyond the reach of existing materials is discussed.
Abstract: Material integration strategies, such as epitaxial growth, usually involve strong chemical bonds and are typically limited to materials with strict structure matching and processing compatibility. Van der Waals integration, in which pre-fabricated building blocks are physically assembled together through weak van der Waals interactions, offers an alternative bond-free integration strategy without lattice and processing limitations, as exemplified by two-dimensional van der Waals heterostructures. Here we review the development, challenges and opportunities of this emerging approach, generalizing it for flexible integration of diverse material systems beyond two dimensions, and discuss its potential for creating artificial heterostructures or superlattices beyond the reach of existing materials.
809 citations
TL;DR: In this paper, a gated multilayer black phosphorus photodetector integrated on a silicon photonic waveguide operating in the telecom band is demonstrated with intrinsic responsivity up to 135
Abstract: A gated multilayer black phosphorus photodetector integrated on a silicon photonic waveguide operating in the telecom band is demonstrated with intrinsic responsivity up to 135 mA W−1 and 657 mA W−1 in 11.5-nm- and 100-nm-thick devices, respectively.
790 citations
TL;DR: In this article, a review of the physical properties of phosphorene and its application in 2D semiconductor materials is presented. But, unlike graphene, phosphorenes have an anisotropic orthorhombic structure that is ductile along one of the inplane crystal directions but stiff along the other.
Abstract: 2D materials are the focus of an intense research effort because of their unique properties and their potential for revealing intriguing new phenomena. Phosphorene, a monolayer of black phosphorus, earned its place among the family of 2D semiconductor materials when recent results unveiled its high carrier mobility, high optical and UV absorption, and other attractive properties, which are of particular interest for optoelectronic applications. Unlike graphene, phosphorene has an anisotropic orthorhombic structure that is ductile along one of the in-plane crystal directions but stiff along the other. This results in unusual mechanical, electronic, optical and transport properties that reflect the anisotropy of the lattice. This Review summarizes the physical properties of phosphorene and highlights the recent progress made in the preparation, isolation and characterization of this material. The role of defects and doping is discussed, and phosphorene-based devices are surveyed; finally, the remaining challenges and potential applications of phosphorene are outlined. Phosphorene is a 2D material exhibiting remarkable mechanical, electronic and optical properties. In this Review, we survey fabrication techniques and discuss theoretical and experimental findings, exploring phosphorene from its fundamental properties to its implementation in devices.
769 citations
TL;DR: A review of photodetectors based on 2D materials covering the detection spectrum from ultraviolet to infrared is presented in this paper, where a brief insight into the detection mechanisms of 2D material photodeterceptors as well as introducing the figure-of-merits which are key factors for a reasonable comparison between different photoderectors is provided.
Abstract: 2D material based photodetectors have attracted many research projects due to their unique structures and excellent electronic and optoelectronic properties. These 2D materials, including semimetallic graphene, semiconducting black phosphorus, transition metal dichalcogenides, insulating hexagonal boron nitride, and their various heterostructures, show a wide distribution in bandgap values. To date, hundreds of photodetectors based on 2D materials have been reported. Here, a review of photodetectors based on 2D materials covering the detection spectrum from ultraviolet to infrared is presented. First, a brief insight into the detection mechanisms of 2D material photodetectors as well as introducing the figure-of-merits which are key factors for a reasonable comparison between different photodetectors is provided. Then, the recent progress on 2D material based photodetectors is reviewed. Particularly, the excellent performances such as broadband spectrum detection, ultrahigh photoresponsivity and sensitivity, fast response speed and high bandwidth, polarization-sensitive detection are pointed out on the basis of the state-of-the-art 2D photodetectors. Initial applications based on 2D material photodetectors are mentioned. Finally, an outlook is delivered, the challenges and future directions are discussed, and general advice for designing and realizing novel high-performance photodetectors is given to provide a guideline for the future development of this fast-developing field.
745 citations
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TL;DR: A simple derivation of a simple GGA is presented, in which all parameters (other than those in LSD) are fundamental constants, and only general features of the detailed construction underlying the Perdew-Wang 1991 (PW91) GGA are invoked.
Abstract: Generalized gradient approximations (GGA’s) for the exchange-correlation energy improve upon the local spin density (LSD) description of atoms, molecules, and solids. We present a simple derivation of a simple GGA, in which all parameters (other than those in LSD) are fundamental constants. Only general features of the detailed construction underlying the Perdew-Wang 1991 (PW91) GGA are invoked. Improvements over PW91 include an accurate description of the linear response of the uniform electron gas, correct behavior under uniform scaling, and a smoother potential. [S0031-9007(96)01479-2] PACS numbers: 71.15.Mb, 71.45.Gm Kohn-Sham density functional theory [1,2] is widely used for self-consistent-field electronic structure calculations of the ground-state properties of atoms, molecules, and solids. In this theory, only the exchange-correlation energy EXC › EX 1 EC as a functional of the electron spin densities n"srd and n#srd must be approximated. The most popular functionals have a form appropriate for slowly varying densities: the local spin density (LSD) approximation Z d 3 rn e unif
146,533 citations
TL;DR: In this paper, the formal relationship between US Vanderbilt-type pseudopotentials and Blochl's projector augmented wave (PAW) method is derived and the Hamilton operator, the forces, and the stress tensor are derived for this modified PAW functional.
Abstract: The formal relationship between ultrasoft (US) Vanderbilt-type pseudopotentials and Bl\"ochl's projector augmented wave (PAW) method is derived. It is shown that the total energy functional for US pseudopotentials can be obtained by linearization of two terms in a slightly modified PAW total energy functional. The Hamilton operator, the forces, and the stress tensor are derived for this modified PAW functional. A simple way to implement the PAW method in existing plane-wave codes supporting US pseudopotentials is pointed out. In addition, critical tests are presented to compare the accuracy and efficiency of the PAW and the US pseudopotential method with relaxed core all electron methods. These tests include small molecules $({\mathrm{H}}_{2}{,\mathrm{}\mathrm{H}}_{2}{\mathrm{O},\mathrm{}\mathrm{Li}}_{2}{,\mathrm{}\mathrm{N}}_{2}{,\mathrm{}\mathrm{F}}_{2}{,\mathrm{}\mathrm{BF}}_{3}{,\mathrm{}\mathrm{SiF}}_{4})$ and several bulk systems (diamond, Si, V, Li, Ca, ${\mathrm{CaF}}_{2},$ Fe, Co, Ni). Particular attention is paid to the bulk properties and magnetic energies of Fe, Co, and Ni.
57,691 citations
TL;DR: In this article, the ground state of an interacting electron gas in an external potential was investigated and it was proved that there exists a universal functional of the density, called F[n(mathrm{r})], independent of the potential of the electron gas.
Abstract: This paper deals with the ground state of an interacting electron gas in an external potential $v(\mathrm{r})$. It is proved that there exists a universal functional of the density, $F[n(\mathrm{r})]$, independent of $v(\mathrm{r})$, such that the expression $E\ensuremath{\equiv}\ensuremath{\int}v(\mathrm{r})n(\mathrm{r})d\mathrm{r}+F[n(\mathrm{r})]$ has as its minimum value the correct ground-state energy associated with $v(\mathrm{r})$. The functional $F[n(\mathrm{r})]$ is then discussed for two situations: (1) $n(\mathrm{r})={n}_{0}+\stackrel{\ifmmode \tilde{}\else \~{}\fi{}}{n}(\mathrm{r})$, $\frac{\stackrel{\ifmmode \tilde{}\else \~{}\fi{}}{n}}{{n}_{0}}\ensuremath{\ll}1$, and (2) $n(\mathrm{r})=\ensuremath{\phi}(\frac{\mathrm{r}}{{r}_{0}})$ with $\ensuremath{\phi}$ arbitrary and ${r}_{0}\ensuremath{\rightarrow}\ensuremath{\infty}$. In both cases $F$ can be expressed entirely in terms of the correlation energy and linear and higher order electronic polarizabilities of a uniform electron gas. This approach also sheds some light on generalized Thomas-Fermi methods and their limitations. Some new extensions of these methods are presented.
38,160 citations
TL;DR: In this paper, the authors present an ab initio quantum-mechanical molecular-dynamics calculations based on the calculation of the electronic ground state and of the Hellmann-Feynman forces in the local density approximation.
Abstract: We present ab initio quantum-mechanical molecular-dynamics calculations based on the calculation of the electronic ground state and of the Hellmann-Feynman forces in the local-density approximation at each molecular-dynamics step. This is possible using conjugate-gradient techniques for energy minimization, and predicting the wave functions for new ionic positions using subspace alignment. This approach avoids the instabilities inherent in quantum-mechanical molecular-dynamics calculations for metals based on the use of a fictitious Newtonian dynamics for the electronic degrees of freedom. This method gives perfect control of the adiabaticity and allows us to perform simulations over several picoseconds.
32,798 citations
TL;DR: This study reports an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon) in which electron transport is essentially governed by Dirac's (relativistic) equation and reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions.
Abstract: Quantum electrodynamics (resulting from the merger of quantum mechanics and relativity theory) has provided a clear understanding of phenomena ranging from particle physics to cosmology and from astrophysics to quantum chemistry. The ideas underlying quantum electrodynamics also influence the theory of condensed matter, but quantum relativistic effects are usually minute in the known experimental systems that can be described accurately by the non-relativistic Schrodinger equation. Here we report an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon) in which electron transport is essentially governed by Dirac's (relativistic) equation. The charge carriers in graphene mimic relativistic particles with zero rest mass and have an effective 'speed of light' c* approximately 10(6) m s(-1). Our study reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions. In particular we have observed the following: first, graphene's conductivity never falls below a minimum value corresponding to the quantum unit of conductance, even when concentrations of charge carriers tend to zero; second, the integer quantum Hall effect in graphene is anomalous in that it occurs at half-integer filling factors; and third, the cyclotron mass m(c) of massless carriers in graphene is described by E = m(c)c*2. This two-dimensional system is not only interesting in itself but also allows access to the subtle and rich physics of quantum electrodynamics in a bench-top experiment.
18,958 citations