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Journal ArticleDOI

Polycrystalline thin film ZnSexTe1-x: preparation and properties

J. Dutta, +3 more
- 14 Jul 1994 - 
- Vol. 27, Iss: 7, pp 1538-1543
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TLDR
ZnSexTe1-x films were prepared by co-evaporating ZnSe and ZnTe powders from a two-zone hot wall evaporation jig onto glass substrates.
Abstract
ZnSexTe1-x films were prepared by co-evaporating ZnSe and ZnTe powders from a two-zone hot wall evaporation jig onto glass substrates. The optical band gaps for different x were determined and this showed a bowing behaviour. The refractive indices and extinction coefficients have been determined as a function of wavelength. Variations of surface roughness with composition and microstructural details were also reported. Grain boundary scattering effects were found to be a dominant factor controlling electron transport processes in these films.

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Citations
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Journal ArticleDOI

Microstructure and optical studies of electron beam evaporated ZnSe1−xTex nanocrystalline thin films

TL;DR: In this paper, the structure and optical properties of nanocrystalline thin films of ZnSe 1− x Te x (0.0, x ǫ ≥ 1.0) were examined using X-ray diffraction technique and revealed that the deposited films have polycrystalline zinc blend structure with lattice constant, a, increasing linearly from 0.55816 to 0.59989 nm as x varies from 0 to 1.
Journal ArticleDOI

Thickness-dependent nonlinear absorption behaviors in polycrystalline ZnSe thin films

TL;DR: In this paper, the life time of localized defect states on grain boundary was found to be ~ 3 ns from ultrafast pump-probe spectroscopy for polycrystalline ZnSe thin films.
Journal ArticleDOI

Optical characterization of polycrystalline ZnSe1−xTex thin films using variable angle spectroscopic ellipsometry and spectrophotmetery techniques

TL;DR: In this article, the optical properties of polycrystalline ZnSe1−xTex (0.0≤x≤1.0) thin films were compared using variable angle spectroscopic ellipsometry (VASE) and spectrophotometry.
Journal ArticleDOI

Metalorganic chemical vapor deposition of ZnSe films on glass and GaAs(111) substrates

TL;DR: In this paper, the authors studied the low-temperature growth and doping of polycrystalline ZnSe by MOCVD using ditertiary-butylselenide (DtBSe) and dimethylzinc-triethylamine (DMZn-TEN) precursors.
Journal ArticleDOI

Structural and optical analyses of polycrystalline Zn1−xSbxSe thin films prepared by resistive heating technique

TL;DR: In this paper, the influence of Sb doping on the structural and optical properties of Zn 1− x Sb x Se (0,⩽, x ǫ⩾ 0.15) thin films prepared by thermal evaporation technique on glass substrate was reported.
References
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Journal ArticleDOI

Some aspects of surface roughness in polycrystalline thin films: optical constants and grain distribution

TL;DR: A modified formulation and new method have been suggested to derive meaningful information on the optical constants, grain size and grain distribution of polycrystalline thin films where surface roughness plays an important part through the contributions arising out of scattered transmission and diffuse reflection.
Journal ArticleDOI

Preparation and optical properties of Cd1−xZnxTe films

TL;DR: Optical properties of Cd1−xZnxTe films (0.1 < × < 0.7) were strudied as a function of incident photon energy in this article.
Journal ArticleDOI

Alternative route for studying the grain boundary scattering in semiconductor films of high resistivity

TL;DR: In this article, the grain boundary potential, the density of trap states and the carrier concentration of the films can be obtained by measuring reflectances of the film deposited on non-absorbing substrates.
Journal ArticleDOI

Ternary II-VI compound thin films for tandem solar cell applications

TL;DR: In this article, the I-V and spectral response characteristics of ZnTe-ZnxCd1−xS heterojunctions and ZnSeyTe1−y graded p-n junctions are reported.
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