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Porous silicon formation: A quantum wire effect
Volker Lehmann,Ulrich Gösele +1 more
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TLDR
In this article, it was shown that a two-dimensional quantum confinement (quantum wire) in the very narrow walls between the pores not only explains the change in band gap energy but also may also explain the dissolution mechanism that leads to porous silicon formation.Abstract:
Porous silicon layers grown on nondegenerated p‐type silicon electrodes in hydrofluoric acid electrolytes are translucent for visible light, which is equivalent to an increased band gap compared to bulk silicon. It will be shown that a two‐dimensional quantum confinement (quantum wire) in the very narrow walls between the pores not only explains the change in band‐gap energy but may also be the key to better understanding the dissolution mechanism that leads to porous silicon formation.read more
Citations
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The structural and luminescence properties of porous silicon
TL;DR: A large amount of work world wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si as mentioned in this paper, and the key importance of crystalline Si nanostructures in determining the behaviour of porous si is highlighted.
Journal ArticleDOI
Visible light emission due to quantum size effects in highly porous crystalline silicon
A. G. Cullis,Leigh T. Canham +1 more
TL;DR: In this paper, the structure of the porous layers that emit red light under photoexcitation was revealed, which constitutes direct evidence that highly porous silicon contains quantum-size crystalline structures responsible for the visible emission.
Journal ArticleDOI
Porous silicon: a quantum sponge structure for silicon based optoelectronics
TL;DR: The photoluminescence properties of porous silicon have attracted considerable research interest since their discovery in 1990 as discussed by the authors, which is due to excitonic recombination quantum confined in Si nanocrystals which remain after the partial electrochemical dissolution of silicon.
Journal ArticleDOI
Anti-reflective coatings: A critical, in-depth review
TL;DR: In this paper, the basic concepts and strategies adopted to minimize reflectance of anti-reflective coatings (ARCs) are described in greater detail and state-of-the-art fabrication techniques have been fully illustrated.
References
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Journal ArticleDOI
Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI
Formation Mechanism and Properties of Electrochemically Etched Trenches in n‐Type Silicon
Volker Lehmann,Helmut Föll +1 more
TL;DR: In this article, the spontaneous trench formation in n-type silicon immersed in hydrofluoric acid under anodic bias is demonstrated and the resulting microstructures are characterized and explained by a model which takes into account the conditions of the space charge region the minority carrier current and the crystal orientation.
Journal ArticleDOI
Quantum confinement and host/guest chemistry: probing a new dimension.
TL;DR: Current approaches for generating nanostructures of conducting materials are briefly reviewed, especially the use of three-dimensional crystalline superlattices as hosts for quantum-confined semiconductor atom arrays (such as quantum wires and dots) with controlled inter-quantum-structure tunneling.
Journal ArticleDOI
Porosity and Pore Size Distributions of Porous Silicon Layers
TL;DR: In this article, the pore size distribution of porous silicon was investigated on different types of substrates and under different experimental conditions, and it was shown that porosity is strongly dependent on the type and resistivity of the original silicon substrate and on the electrochemical parameters used during anodization processes.
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A. G. Cullis,Leigh T. Canham +1 more