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Positron annihilation in semiconductors : defect studies
R. Krause-Rehberg,H. S. Leipner +1 more
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TLDR
In this article, the authors compare Positron annihilation with other defect-sensitive techniques, such as defect characterisation in III-V and II-VI compounds, and compare them with other techniques.Abstract:
1 Introduction.- 2 Experimental Techniques.- 3 Basics of Positron Annihilation in Semiconductors.- 4 Defect Characterization in Elemental Semiconductors.- 5 Defect Characterization in III-V Compounds.- 6 Defect Characterization in II-VI Compounds.- 7 Defect Characterization in Other Compounds.- 8 Applications of Positron Annihilation in Defect Engineering.- 9 Comparison of Positron Annihilation with Other Defect-Sensitive Techniques.- A1 Semiconductor Data.- A2 Trapping Model Equations.- References.read more
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Journal ArticleDOI
Annealing effect on nano-ZnO powder studied from positron lifetime and optical absorption spectroscopy
Sreetama Dutta,S. Chattopadhyay,Debnarayan Jana,A. Banerjee,S.K Manik,Swapan Kumar Pradhan,Manas Sutradhar,Anindya Sarkar +7 more
TL;DR: In this article, different thermal stages of generation and recovery of cationic as well as anionic defects in granular ZnO are discussed in the light of XRD, PAL, and optical absorption studies.
Journal ArticleDOI
Production and recovery of defects in phosphorus-implanted ZnO
Zonggui Chen,Atsuo Kawasuso,Y. Xu,Hiroshi Naramoto,Xiaoli Yuan,Takashi Sekiguchi,R. Suzuki,Toshiyuki Ohdaira +7 more
TL;DR: In this paper, Positron annihilation measurements reveal the introduction of vacancy clusters after implantation, and these vacancy clusters grow to a larger size after annealing at a temperature of 600°C.
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Thermal stability of isolated and complexed Ga vacancies in GaN bulk crystals
TL;DR: In this paper, positron annihilation spectroscopy was applied to show that 2-MeV electron irradiation at 300 K creates primary Ga vacancies in GaN with an introduction rate of 1.5 (2) eV.
Journal ArticleDOI
Charged point defects in semiconductors
TL;DR: In this article, the authors present a comprehensive account of semiconductor defect charging, identifying correspondences and contrasts between surfaces and the bulk as well as among semiconductor classes (group IV, groups III-V, and metal oxides).
Journal ArticleDOI
Vacancy defects as compensating centers in Mg-doped GaN.
S. Hautakangas,J. Oila,Matti Alatalo,Matti Alatalo,Kimmo Saarinen,Laszlo Liszkay,D. Seghier,H. P. Gislason +7 more
TL;DR: The observation of V(N)-Mg(Ga) complexes confirms that vacancy defects in either the N or Ga sublattice are abundant in GaN at any position of the Fermi level during growth, as predicted previously by theoretical calculations.